HM1N60 [HMSEMI]
High efficiency switch mode power supplies;
| 型号： | HM1N60 |
| 厂家： | 
H&M Semiconductor |
| 描述： | High efficiency switch mode power supplies |
| 文件： | 总12页 (文件大小：732K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
N沟道增强型场效应晶体管
N-CHANNEL MOSFET
HM1N60
主要参数 MAIN CHARACTERISTICS
封装 Package
0.5 A
1.0 A
600 V
15 Ω
TO-92
ID
IPAK/DPKA
VDSS
Rdson（Vgs=10V）
Qg
6.1 nC
APPLICATIONS
用途
z 高频开关电源
z 电子镇流器
z High efficiency switch
mode power supplies
z Electronic lamp ballasts
based on half bridge
产品特性
z低栅极电荷
FEATURES
zLow gate charge
zLow Crss (typical 3.7pF )
zFast switching
z低Crss (典型值3.7pF)
z开关速度快
z产品全部经过雪崩测试
z高抗dv/dt 能力
zRoHS 产品
z100% avalanche tested
zImproved dv/dt capability
zRoHS product
订货信息 ORDER MESSAGE
订 货 型 号
印
记
封
装
无卤素
包
装
器件重量
Order codes
Marking
Package
Halogen Free Packaging
Device Weight
HM1N60
HM1N60I
HM1N60K
HM1N60
HM1N60I
HM1N60K
否
否
否
NO
NO
NO
编带Brede
条管Tube
条管Tube
0.216 g(typ)
0.350 g(typ)
0.300 g(typ)
TO-92
IPAK
DPAK
Shenzhen H&M Semiconductor Co.Ltd
1/12
http：//www.hmsemi.com
HM1N60
绝对最大额定值 ABSOLUTE RATINGS (Tc=25℃)
数 值
项
目
符 号
单 位
Value
Unit
Parameter
Symbol
HM1N60
HM1N60I/K
最高漏极－源极直流电压
Drain-Source Voltage
连续漏极电流
VDSS
600
600
V
0.5
1.0
A
A
ID T=25℃
T=100℃
Drain Current
-continuous
0.31
0.62
最大脉冲漏极电流（注1）
Drain Current - pulse
最高栅源电压
IDM
2.0
4.0
A
V
（note 1）
VGSS
±30
47
Gate-Source Voltage
单脉冲雪崩能量（注2）
Single Pulsed Avalanche Energy EAS
mJ
A
（note 2）
雪崩电流（注1）
IAR
1.0
3.0
Avalanche Current（note 1）
重复雪崩能量（注1）
Repetitive Avalanche Current
（note 1）
EAR
mJ
二极管反向恢复最大电压变化速率
（注3）
dv/dt
4.2
4.2
V/ns
Peak Diode Recovery
dv/dt
（note 3）
PD TC=25℃
-Derate above
25℃
3.0
30
W
耗散功率
Power Dissipation
0.025
0.24
W/℃
最高结温及存储温度
Operating
and
Storage TJ，TSTG
-55～+150
℃
℃
Temperature Range
引线最高焊接温度
Maximum Lead Temperature for TL
Soldering Purposes
300
Shenzhen H&M Semiconductor Co.Ltd
http：//www.hmsemi.com
2/12
HM1N60
电特性 ELECTRICAL CHARACTERISTICS
项
目
符 号
测试条件
最小 典型最大单 位
Parameter
关态特性 Off –Characteristics
漏－源击穿电压
Symbol
Tests conditions
Min Typ Max Units
BVDSS
ID=250μA, VGS=0V
600
-
-
-
-
V
Drain-Source Voltage
击穿电压温度特性
ΔBVDSS/Δ
Breakdown Voltage Temperature
Coefficient
ID=1mA, referenced to 25℃
VDS=600V,VGS=0V, TC=25℃
0.60
V/℃
TJ
零栅压下漏极漏电流
-
-
-
-
10 μA
100 μA
IDSS
Zero Gate Voltage Drain Current
VDS=480V,
TC=125℃
正向栅极体漏电流
Gate-body leakage current,
forward
IGSSF
VDS=0V, VGS =30V
VDS=0V, VGS =-30V
-
-
-
-
100 nA
-100 nA
反向栅极体漏电流
Gate-body leakage current,
reverse
IGSSR
通态特性On-Characteristics
阈值电压
VGS(th)
RDS(ON)
gfs
VDS = VGS , ID=250μA
2.0
-
4.0
V
Ω
S
Gate Threshold Voltage
静态导通电阻
Static Drain-Source
On-Resistance
VGS =10V , ID=0.5A
-
-
11 15
正向跨导
0.8
-
Forward Transconductance
动态特性Dynamic Characteristics
输入电容
VDS = 40V , ID=0.5（note 4）
VDS=25V,
VGS =0V,
f=1.0MHZ
Ciss
Coss
Crss
-
-
-
178 221 pF
19 27 pF
3.7 4.8 pF
Input capacitance
输出电容
Output capacitance
反向传输电容
Reverse transfer capacitance
Shenzhen H&M Semiconductor Co.Ltd
3/12
http：//www.hmsemi.com
HM1N60
电特性 ELECTRICAL CHARACTERISTICS
开关特性Switching Characteristics
延迟时间Turn-On delay time
上升时间Turn-On rise time
延迟时间Turn-Off delay time
下降时间Turn-Off Fall time
栅极电荷总量Total Gate Charge
栅－源电荷Gate-Source charge
栅－漏电荷Gate-Drain charge
td(on)
tr
VDD=300V,ID=1.0A,RG=25Ω
（note 4，5）
-
-
-
-
-
-
-
15 45
ns
46 105 ns
td(off)
tf
26 62
37 82
ns
ns
V
DS =480V ,
ID=1.0A
GS =10V （note 4，5）
Qg
6.1 7.2 nC
Qgs
Qgd
1.0
3.0
-
-
nC
nC
V
漏－源二极管特性及最大额定值 Drain-Source Diode Characteristics and Maximum Ratings
正向最大连续电流
Maximum Continuous Drain
-Source Diode Forward Current
正向最大脉冲电流
IS
-
-
-
-
-
-
1.0
4.0
1.0
A
A
V
Maximum Pulsed Drain-Source
Diode Forward Current
正向压降
ISM
Drain-Source Diode Forward
Voltage
VSD
VGS=0V,
IS=1.0A
反向恢复时间
trr
-
-
185
-
-
ns
Reverse recovery time
反向恢复电荷
VGS=0V, IS=1.0A
dIF/dt=100A/μs
(note 4)
Qrr
0.51
μC
Reverse recovery charge
热特性THERMAL CHARACTERISTIC
最大
项
目
符 号
单 位
Max
Parameter
Symbol
Unit
℃/W
℃/W
HM1N60
HM1N60I/K
结到管壳的热阻
Thermal Resistance, Junction to Case
结到环境的热阻
Rth(j-c)
Rth(j-A)
－
4.75
120
105
Thermal Resistance, Junction to Ambient
注释：
Notes:
1：脉冲宽度由最高结温限制
2：L=59mH, IAS=1.0A, VDD=50V, RG=25 Ω,起始结
温TJ=25℃
1 ： Pulse width limited by maximum junction
temperature
2：L=59mH, IAS=1.0A, VDD=50V, RG=25 Ω, Starting
TJ=25℃
3：ISD ≤1.0A,di/dt ≤200A/μs,VDD≤BVDSS,起始结温
TJ=25℃
3 ：ISD ≤1.0A,di/dt ≤200A/μs,VDD≤BVDSS, Starting
TJ=25℃
4：脉冲测试：脉冲宽度≤300μs,占空比≤2％
5：基本与工作温度无关
4：Pulse Test：Pulse Width ≤300μs,Duty Cycle≤2％
5：Essentially independent of operating temperature
Shenzhen H&M Semiconductor Co.Ltd
http：//www.hmsemi.com
4/12
HM1N60
特征曲线 ELECTRICAL CHARACTERISTICS (curves)
Transfer Characteristics
On-Region Characteristics
VGS
15V
10V
8V
Top
7V
6.5V
6V
10
5.5V
Bottom 5V
1
150℃
1
25℃
Notes：
1. 250μs pulse test
2. TC=25℃
Notes：
1.250μs pulse test
0.1
2.VDS=40V
0.1
1
10
2
4
6
8
10
VDS [V]
VGS [V]
On-Resistance Variation vs.
Body Diode Forward Voltage Variation
vs. Source Current and Temperature
Drain Current and Gate Voltage
16
15
VGS=20V
14
1
13
VGS=10V
150℃
12
25℃
Note ：Tj=25℃
11
10
0.0
0.1
0.5
1.0
1.5
2.0
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
ID [A]
VSD [V]
Capacitance Characteristics
Gate Charge Characteristics
VDS=480V
VDS=300V
10
8
VDS=120V
6
4
2
0
0
1
2
3
4
5
6
7
Q Toltal Gate Charge [nC]
g
Shenzhen H&M Semiconductor Co.Ltd
5/12
http：//www.hmsemi.com
HM1N60
特征曲线 ELECTRICAL CHARACTERISTICS (curves)
On-Resistance Variation
vs. Temperature
Breakdown Voltage Variation
vs. Temperature
1.2
1.1
1.0
0.9
0.8
3.0
2.5
2.0
1.5
1.0
0.5
0.0
Notes：
1. VGS=0V
2. ID=250μA
Notes：
1. VGS=10V
2. ID=0.5A
-75
-50
-25
0
25
50
75
100
125
150
-75
-50
-25
0
25
50
75
100
125
150
Tj [℃]
T [ ℃]
j
Maximum Safe Operating Area
Maximum Safe Operating Area
For HM1N60
For HM1N60I/K
Maximum Drain Current
vs. Case Temperature
Shenzhen H&M Semiconductor Co.Ltd
6/12
http：//www.hmsemi.com
HM1N60
特征曲线 ELECTRICAL CHARACTERISTICS (curves)
Transient Thermal Response Curve
For HM1N60
1
0.5
0.2
Notes :
0.1
0.1
1. ZθJA(t)= r(t) * RθJA
2. Duty Factor, D=t1/t2
0.05
3. TJM – TA = PDM * ZθJA(t)
0.02
0.01
single pulse
0.01
10-2
10-1
100
101
102
103
104
105
t1 [ms]
Transient Thermal Response Curve
For HM1N60I/K
Shenzhen H&M Semiconductor Co.Ltd
7/12
http：//www.hmsemi.com
HM1N60
外形尺寸 PACKAGE MECHANICAL DATA
TO-92
单位Unit ：mm
Shenzhen H&M Semiconductor Co.Ltd
http：//www.hmsemi.com
8/12
HM1N60
外形尺寸 PACKAGE MECHANICAL DATA
IPAK Gh
单位Unit：mm
Shenzhen H&M Semiconductor Co.Ltd
9/12
http：//www.hmsemi.com
HM1N60
外形尺寸 PACKAGE MECHANICAL DATA
DPAK Gh
单位Unit：mm
Shenzhen H&M Semiconductor Co.Ltd
10/12
http：//www.hmsemi.com
HM1N60
外形尺寸 PACKAGE MECHANICAL DATA
IPAK Gf
单位Unit：mm
Shenzhen H&M Semiconductor Co.Ltd
11/12
http：//www.hmsemi.com
HM1N60
外形尺寸 PACKAGE MECHANICAL DATA
DPAK Gf
单位Unit：mm
Shenzhen H&M Semiconductor Co.Ltd
12/12
http：//www.hmsemi.com
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