HM2006B [HMSEMI]

High and Low Side Driver;
HM2006B
型号: HM2006B
厂家: H&M Semiconductor    H&M Semiconductor
描述:

High and Low Side Driver

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HM2006  
High and Low Side Driver  
General Description  
The HM2006 is a high voltage, high speed power MOSFET and IGBT driver based on P_SUB P_EPI process.  
The floating channel driver can be used to drive two N-channel power MOSFET or IGBT independently which  
operates up to 120 V. Logic inputs are compatible with standard CMOS or LSTTL output, down to 3.3V logic.  
The output drivers feature a high pulse current buffer stage designed for minimum driver cross -conduction.  
Propagation delays are matched to simplify use in high frequency applications. It has two versions HM2006A &  
HM2006B.  
Features  
Packages/Order information  
z
z
z
Fully operational to +120 V  
3.3 V logic compatible  
Floating channel designed for bootstrap  
operation  
Gate drive supply range from 10 V to 20 V  
Output Source / Sink Current Capability  
450mA /  
900mA  
z
z
z
Independent Logic Inputs to Accommodate All  
Topologies  
z
z
-5V negative Vs ability  
Matched propagation delay for both channels  
Part number  
HM2006A  
HM2006B  
Order Code  
HM2006A  
HM2006B  
Package  
SOIC8  
SOIC8  
Applications  
z
Small and medium- power motor driver  
Power MOSFET or IGBT driver  
z
Typical Application Circuit  
Version 1.1  
1 / 6  
January 21, 2015  
HM2006  
Pin Description  
PIN NO.  
PIN NAME
 
PIN FUNCT  
ION  
1
VCC  
Low side and main power supply  
Logic input for high side gate driver output (HO)  
Logic input for low side gate driver output (LO)  
Ground  
2
3
HIN  
LIN(LIN)  
4
COM  
Low side gate drive output  
5
LO  
A version: in phase with LIN
 
B version: out of phase w  
High side floating supply return or bootstrap return  
High side gate drive output, in phase with HIN  
High side floating supply  
ith  
6
7
8
VS  
HO  
VB  
Functional Block Diagram  
Version 1.1  
2 / 6  
January 21, 2015  
HM2006  
Absolute Maximum Ratings [Note1]  
Symbol  
VB  
Definition  
MIN.  
-0.3  
MAX.  
130  
Units  
High side floating supply  
High side floating supply return  
High side gate drive output  
Low side and main power supply  
Low side gate drive output  
Logic input of HIN & LIN  
VS  
VB – 22  
VS -0.3  
-0.3  
VB + 0.3  
VB + 0.3  
22  
VHO  
VCC  
VLO  
VIN  
V
-0.3  
VCC + 0.3  
VCC + 0.3  
-0.3  
HBM Model  
2.5  
kV  
V
ESD  
Machine Model  
200  
PD  
RthJA  
TJ  
Packa  
ge Power Dissipation @ TA  
8 Lead SOIC  
8 Lead SOIC  
--  
--  
0.625  
200  
W
Thermal Resistance Junction to  
Junction Temperature  
Storage  
Lead Temperature (Soldering, 10 seconds)  
°C /W  
--  
-55  
--  
150  
150  
300  
TS  
°C  
TL  
Note 1: Exceeding these ratings may damage the device.  
Recommended Operating Conditions  
Symbol  
Definition  
MIN.  
VS +10  
-
MAX.  
Units  
VB  
VS +20  
120  
VB  
High side floating supply  
High side floating supply return  
High side gate drive output voltage  
Low side supply  
VS  
VHO  
VCC  
VLO  
VIN  
TA  
VS  
10  
0
V
20  
VCC  
VCC  
125  
Low side gate drive output voltage  
Logic input voltage(HIN & LIN)  
Ambient temperature  
0
-40  
Dynamic Electrical Characteristics  
VBIAS (VCC, VBS) = 15V, CL = 1000 pF and TA = 25°C unless otherwise specified.  
Symbol  
tonH  
Definition  
TYP  
MAX.  
250  
Units  
.
High side turn-on propagation delay  
High side turn-off propagation delay  
Low side turn-on propagation delay  
Low side turn-off propagation delay  
Delay matching  
220  
toffH  
90  
120  
ton  
100  
90  
120  
L
toff  
110  
ns  
L
MT  
tr  
120  
70  
150  
Turn-on rise time  
90  
tf  
Turn-off fall time  
60  
80  
Version 1.1  
3 / 6  
January 21, 2015  
HM2006  
Static Electrical Characteristics  
VBIAS (VCC, VBS) = 15V, CL = 1000 pF and TA = 25°C unless otherwise specified.  
Symbol  
VIH  
Definition  
MIN.  
TYP.  
MAX.  
-
Units  
Logic “1”(HIN & LIN) input voltage  
Logic “0” (HIN & LIN) input voltage  
High level output voltage, VBIAS - VO  
Low level output voltage, VO  
2.5  
-
VIL  
-
-
-
-
-
-
0.8  
0.3  
0.3  
270  
55  
V
VOH  
-
VOL  
-
IQC  
Quiescent VCC supply current  
150  
30  
-
C
IQBS  
ILK  
Quiescent VB supply current  
Leakage current from VS(600V) to GND  
Logic “1” input bias current  
50  
μA  
IIN  
-
-
6
10  
+
IIN-  
IO+  
IO-  
Logic “0” input bias current  
1
2
Output high short circuit pulsed current  
Output low short circuit pulsed current  
450  
900  
mA  
Logic Function  
A version  
B version  
Timing  
Spec  
Version 1.1  
4 / 6  
January 21, 2015  
HM2006  
Package Information  
SOIC8 Package Dimensions  
Size  
MIN(mm)  
Symbol  
Size  
Symbol  
TYP(mm)  
MAX(mm)  
MIN(mm)  
TYP(mm)  
MAX(mm)  
A
A1  
A2  
A3  
b
-
-
-
1.75  
0.225  
1.50  
0.70  
0.48  
0.43  
0.26  
0.21  
D
E
4.70  
5.80  
3.70  
4.90  
5.10  
6.20  
4.10  
0.10  
1.30  
0.60  
0.39  
0.38  
0.21  
0.19  
6.00  
1.40  
0.65  
-
E1  
e
3.90  
1.27BSC  
h
0.25  
0.50  
-
0.50  
0.80  
b1  
c
0.41  
-
L
-
L1  
θ
1.05BSC  
-
c1  
0.20  
0
8
Package  
Outlines  
Mark  
Packag  
HM2006  
SOIC8  
Version 1.1  
5 / 6  
January 21, 2015  

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