HM78LXXTA [HMSEMI]
POSITIVE VOLTAGE REGULATOR;
| 型号： | HM78LXXTA |
| 厂家： | 
H&M Semiconductor |
| 描述： | POSITIVE VOLTAGE REGULATOR |
| 文件： | 总14页 (文件大小：428K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HM78LXX
POSITIVE VOLTAGE REGULATOR
3-TERMINAL 0.1A POSITIVE VOLTAGE REGULATORS
This series of fixed-voltage monolithic integrated-circuit
voltage regulators is designed for a wide range of
applications. These applications include on-card regulation
for elimination of noise and distribution problems associated
with single-point regulation. In addition, they can be used
with power-pass elements to make high current voltage
regulators. Each of these regulators can deliver up to 100mA
output current.
The internal limiting and thermal shutdown features of
these regulators make them essentially immune to overload.
When used as a replacement for a zener diode-resistor
combination, an effective improvement in output impedance
can be obtained together with lower-bias current.
Features
Output current Up to 100mA
No External Components
Internal Thermal Overload Protection
Internal Short-Circuit Limiting
Output Voltage of 5V, 6V, 8V, 9V, 10V, 12V,
15V, 18V and 24V
ORDERING INFORMATION
Operating
Package
Device
Packing
Temperature Range
HM78LXX
TO-92
Bulk
HM78LXXTA
HM78LXXDT
HM78LXXPT
TO-92
TA = -40 to 125 C
SO-8
Taping
Tape & Reel
Tape & Reel
SOT-89
Pin Configuration
TO-92
SOT-89
SO-8
Shenzhen H&M Semiconductor Co.Ltd
http：//www.hmsemi.com
HM78LXX
Absolute Maximum Ratings
Characteristic
Symbol
Value
30
Unit
HM78L05 ~ HM78L10
Input voltage
HM78L12 ~ HM78L18
HM78L24
TO-92
Vl
35
V
40
625
Power Dissipation
SOT-89
Pd
500
mW
°C
SOP-8
625
Operating junction temperature
Storage temperature
Topr
Tstg
Tsol
-40 ~ +150
-65 ~ +150
260/10sec
Soldering temperature and time
* Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device.
These are stress ratings only and functional operation of the device at these or any other conditions beyond those
indicated under “recommended operating conditions” is not implied.
Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
RECOMMENDED OPERATING CONDITIONS
78Lxx
Min.
Max.
Unit
HM78L05
HM78L06
HM78L08
HM78L09
HM78L10
HM78L12
HM78L15
HM78L18
HM78L24
7
8
20
20
23
24
25
27
30
33
39
10.5
11.5
12.5
14.5
17.5
20.5
26.5
Input voltage, VI
V
Output current, Io
100
125
㎃
℃
Operating virtual junction temperature, Tj
-40
TYPICAL APPLICATION
HM
Notes
1. To specify an output voltage, substitute voltage for "XX"
2. Bypass capacitors are recommended for optimum stability and transient response
and should be located as close as possible to the regulators.
Shenzhen H&M Semiconductor Co.Ltd
http：//www.hmsemi.com
HM78LXX
HM78L05 ELECTRICAL CHARACTERISTICS
(At specified virtual junction temperature, Vl=10V, lo=40mA (unless otherwise noted)
Test condition *
Characteistic
Symbol
Min
4.8
Typ.
5
Max.
Unit
25℃
5.2
1㎃≤ Io≤ 40㎃
Output voltage **
Vout
V
4.75
4.75
5
5.25
7V≤ VI≤ Vmax
1㎃≤Io≤ 70㎃
7≤ VI≤ 20V
-40 ~ 125℃
5
32
26
15
8
5.25
150
100
60
Line regulation
Load regulation
Bias current
Reg line
Reg load
IB
25℃
25℃
㎷
㎷
㎃
㎃
8≤ VI≤ 20V
1㎃≤ Io≤ 100㎃
1㎃≤ Io≤ 40㎃
30
25℃
3.8
6
125℃
5.5
1.5
0.1
9≤ VI≤ 20V
1㎃≤ Io≤ 40㎃
10㎐≤ f≤ 100㎑
△IB
Bias current change
-40 ~ 125℃
VN
RR
VD
Output noise voltage
Ripple rejection
25℃
25℃
25℃
42
49
㎶
dB
V
8≤ VI≤ 20V
f=120㎐
41
Dropout voltage
1.7
Notes
*. Pulse testing techniques are used to maintain the junction temperature as close to the ambient temperature as
possible.
Thermal effects must be taken into account separately.
All characteristics are measured with a 0.33㎌ capacitor across the input and a 0.1㎌ capacitor across the output.
**. This specification applies only for DC power dissipation permitted by absolute maximum ratings.
Shenzhen H&M Semiconductor Co.Ltd
http：//www.hmsemi.com
HM78LXX
HM78L06 ELECTRICAL CHARACTERISTICS
(At specified virtual junction temperature, Vl=12V, lo=40mA (unless otherwise noted)
Test condition *
Characteistic
Symbol
Min
Typ.
6
Max.
Unit
25℃
5.75
6.25
6.3
1㎃≤ Io≤ 40㎃
Output voltage **
Vout
V
5.7
5.7
6
8V≤ VI≤ 20V
1㎃≤Io≤ 70㎃
8≤ VI≤ 20V
-40 ~ 125℃
6
35
29
16
9
6.3
175
125
80
Line regulation
Load regulation
Bias current
Reg line
Reg load
IB
25℃
25℃
㎷
㎷
㎃
㎃
9≤ VI≤ 20V
1㎃≤ Io≤ 100㎃
1㎃≤ Io≤ 40㎃
40
25℃
3.9
6
125℃
5.5
1.5
0.1
9≤ VI≤ 20V
1㎃≤ Io≤ 40㎃
10㎐≤ f≤ 100㎑
△IB
Bias current change
-40 ~ 125℃
VN
RR
VD
Output noise voltage
Ripple rejection
25℃
25℃
25℃
46
48
㎶
dB
V
9≤ VI≤ 19V
f=120㎐
40
Dropout voltage
1.7
Notes
*. Pulse testing techniques are used to maintain the junction temperature as close to the ambient temperature as
possible.
Thermal effects must be taken into account separately.
All characteristics are measured with a 0.33㎌ capacitor across the input and a 0.1㎌ capacitor across the output.
**. This specification applies only for DC power dissipation permitted by absolute maximum ratings.
Shenzhen H&M Semiconductor Co.Ltd
http：//www.hmsemi.com
HM78LXX
HM78L08 ELECTRICAL CHARACTERISTICS
(At specified virtual junction temperature, Vl=14V, lo=40mA (unless otherwise noted)
Test condition *
Characteistic
Symbol
Min
7.7
Typ.
8
Max.
Unit
25℃
8.3
8.4
1㎃≤ Io≤ 40㎃
Output voltage **
Vout
V
7.6
7.6
8
10.5V≤ VI≤ 23V
1㎃≤Io≤ 70㎃
10.5≤ VI≤ 23V
11≤ VI≤ 23V
-40 ~ 125℃
8
8.4
175
125
80
42
36
18
10
4
Line regulation
Load regulation
Bias current
Reg line
Reg load
IB
25℃
25℃
㎷
㎷
㎃
㎃
1㎃≤ Io≤ 100㎃
1㎃≤ Io≤ 40㎃
40
25℃
6
125℃
5.5
1.5
0.1
11≤ VI≤ 23V
1㎃≤ Io≤ 40㎃
10㎐≤ f≤ 100㎑
△IB
Bias current change
-40 ~ 125℃
VN
RR
VD
Output noise voltage
Ripple rejection
25℃
25℃
25℃
54
46
㎶
dB
V
13≤ VI≤ 23V
f=120㎐
37
Dropout voltage
1.7
Notes
*. Pulse testing techniques are used to maintain the junction temperature as close to the ambient temperature as
possible.
Thermal effects must be taken into account separately.
All characteristics are measured with a 0.33㎌ capacitor across the input and a 0.1㎌ capacitor across the output.
**. This specification applies only for DC power dissipation permitted by absolute maximum ratings.
Shenzhen H&M Semiconductor Co.Ltd
http：//www.hmsemi.com
HM78LXX
HM78L09 ELECTRICAL CHARACTERISTICS
(At specified virtual junction temperature, Vl=14V, lo=40mA (unless otherwise noted)
Test condition *
Characteistic
Symbol
Min
806
Typ.
9
Max.
Unit
25℃
9.4
1㎃≤ Io≤ 40㎃
Output voltage **
Vout
V
8.55
8.55
9
9.45
12V≤ VI≤ 24V
1㎃≤Io≤ 70㎃
12≤ VI≤ 24V
13≤ VI≤ 24V
1㎃≤ Io≤ 100㎃
1㎃≤ Io≤ 40㎃
-40 ~ 125℃
9
9.45
175
125
90
45
40
19
11
4.1
Line regulation
Load regulation
Bias current
Reg line
Reg load
IB
25℃
25℃
㎷
㎷
㎃
㎃
40
25℃
6
125℃
5.5
1.5
0.1
13≤ VI≤ 24V
1㎃≤ Io≤ 40㎃
10㎐≤ f≤ 100㎑
△IB
Bias current change
-40 ~ 125℃
VN
RR
VD
Output noise voltage
Ripple rejection
25℃
25℃
25℃
58
45
㎶
dB
V
13≤ VI≤ 23V
f=120㎐
38
Dropout voltage
1.7
Notes
*. Pulse testing techniques are used to maintain the junction temperature as close to the ambient temperature as
possible.
Thermal effects must be taken into account separately.
All characteristics are measured with a 0.33㎌ capacitor across the input and a 0.1㎌ capacitor across the output.
**. This specification applies only for DC power dissipation permitted by absolute maximum ratings.
Shenzhen H&M Semiconductor Co.Ltd
http：//www.hmsemi.com
HM78LXX
HM78L10 ELECTRICAL CHARACTERISTICS
(At specified virtual junction temperature, Vl=16V, lo=40mA (unless otherwise noted)
Test condition *
Characteistic
Symbol
Min
9.6
Typ.
10
Max.
Unit
25℃
10.4
10.5
1㎃≤ Io≤ 40㎃
Output voltage **
Vout
V
9.5
9.5
10
13V≤ VI≤ 25V
1㎃≤Io≤ 70㎃
13≤ VI≤ 25V
14≤ VI≤ 25V
1㎃≤ Io≤ 100㎃
1㎃≤ Io≤ 40㎃
-40 ~ 125℃
10
51
42
20
11
4.2
10.5
175
125
90
Line regulation
Load regulation
Bias current
Reg line
Reg load
IB
25℃
25℃
㎷
㎷
㎃
㎃
40
25℃
6
125℃
5.5
1.5
0.1
14≤ VI≤ 25V
1㎃≤ Io≤ 40㎃
10㎐≤ f≤ 100㎑
△IB
Bias current change
-40 ~ 125℃
VN
RR
VD
Output noise voltage
Ripple rejection
25℃
25℃
25℃
62
44
㎶
dB
V
15≤ VI≤ 25V
f=120㎐
37
Dropout voltage
1.7
Notes
*. Pulse testing techniques are used to maintain the junction temperature as close to the ambient temperature as
possible.
Thermal effects must be taken into account separately.
All characteristics are measured with a 0.33㎌ capacitor across the input and a 0.1㎌ capacitor across the output.
**. This specification applies only for DC power dissipation permitted by absolute maximum ratings.
Shenzhen H&M Semiconductor Co.Ltd
http：//www.hmsemi.com
HM78LXX
HM78L12 ELECTRICAL CHARACTERISTICS
(At specified virtual junction temperature, Vl=17V, lo=40mA (unless otherwise noted)
Test condition *
Characteistic
Symbol
Min
Typ.
12
Max.
Unit
25℃
11.5
12.5
12.6
1㎃≤ Io≤ 40㎃
Output voltage **
Vout
V
11.4
11.4
12
14V≤ VI≤ 27V
1㎃≤Io≤ 70㎃
14.5≤ VI≤ 27V
16≤ VI≤ 27V
-40 ~ 125℃
12
55
49
22
13
4.3
12.6
250
200
100
50
Line regulation
Load regulation
Bias current
Reg line
Reg load
IB
25℃
25℃
㎷
㎷
㎃
㎃
1㎃≤ Io≤ 100㎃
1㎃≤ Io≤ 40㎃
25℃
6.5
6
125℃
16≤ VI≤ 27V
1㎃≤ Io≤ 40㎃
10㎐≤ f≤ 100㎑
1.5
0.1
△IB
Bias current change
-40 ~ 125℃
VN
RR
VD
Output noise voltage
Ripple rejection
25℃
25℃
25℃
70
42
㎶
dB
V
15≤ VI≤ 25V
f=120㎐
37
Dropout voltage
1.7
Notes
*. Pulse testing techniques are used to maintain the junction temperature as close to the ambient temperature as
possible.
Thermal effects must be taken into account separately.
All characteristics are measured with a 0.33㎌ capacitor across the input and a 0.1㎌ capacitor across the output.
**. This specification applies only for DC power dissipation permitted by absolute maximum ratings.
Shenzhen H&M Semiconductor Co.Ltd
http：//www.hmsemi.com
HM78LXX
HM78L15 ELECTRICAL CHARACTERISTICS
(At specified virtual junction temperature, Vl=19V, lo=40mA (unless otherwise noted)
Test condition *
Characteistic
Symbol
Min
Typ.
15
Max.
Unit
25℃
14.4
15.6
1㎃≤ Io≤ 40㎃
Output voltage **
Vout
V
14.25
14.25
15
15.75
17.5V≤ VI≤ 30V
1㎃≤Io≤ 70㎃
17.5≤ VI≤ 30V
19≤ VI≤ 30V
-40 ~ 125℃
15
65
58
25
15
4.2
15.75
300
250
150
75
Line regulation
Load regulation
Bias current
Reg line
Reg load
IB
25℃
25℃
㎷
㎷
㎃
㎃
1㎃≤ Io≤ 100㎃
1㎃≤ Io≤ 40㎃
25℃
6.5
6
125℃
19≤ VI≤ 30V
1㎃≤ Io≤ 40㎃
10㎐≤ f≤ 100㎑
1.5
0.1
△IB
Bias current change
-40 ~ 125℃
VN
RR
VD
Output noise voltage
Ripple rejection
25℃
25℃
25℃
82
44
㎶
dB
V
18.5≤ VI≤ 28.5V
f=120㎐
37
Dropout voltage
1.7
Notes
*. Pulse testing techniques are used to maintain the junction temperature as close to the ambient temperature as
possible.
Thermal effects must be taken into account separately.
All characteristics are measured with a 0.33㎌ capacitor across the input and a 0.1㎌ capacitor across the output.
**. This specification applies only for DC power dissipation permitted by absolute maximum ratings.
Shenzhen H&M Semiconductor Co.Ltd
http：//www.hmsemi.com
HM78LXX
HM78L18 ELECTRICAL CHARACTERISTICS
(At specified virtual junction temperature, Vl=23V, lo=40mA (unless otherwise noted)
Test condition *
Characteistic
Symbol
Min
Typ.
18
Max.
Unit
25℃
17.3
18.7
18.9
1㎃≤ Io≤ 40㎃
Output voltage **
Vout
V
17.1
17.1
18
20.5V≤ VI≤ 33V
1㎃≤Io≤ 70㎃
20.5≤ VI≤ 33V
22≤ VI≤ 33V
-40 ~ 125℃
18
70
64
27
19
4.7
18.9
360
300
180
90
Line regulation
Load regulation
Bias current
Reg line
Reg load
IB
25℃
25℃
㎷
㎷
㎃
㎃
1㎃≤ Io≤ 100㎃
1㎃≤ Io≤ 40㎃
25℃
6.5
6
125℃
22≤ VI≤ 33V
1㎃≤ Io≤ 40㎃
10㎐≤ f≤ 100㎑
1.5
0.1
△IB
Bias current change
-40 ~ 125℃
VN
RR
VD
Output noise voltage
Ripple rejection
25℃
25℃
25℃
82
36
㎶
dB
V
21.5≤ VI≤ 31.5V
f=120㎐
32
Dropout voltage
1.7
Notes
*. Pulse testing techniques are used to maintain the junction temperature as close to the ambient temperature as
possible.
Thermal effects must be taken into account separately.
All characteristics are measured with a 0.33㎌ capacitor across the input and a 0.1㎌ capacitor across the output.
**. This specification applies only for DC power dissipation permitted by absolute maximum ratings.
Shenzhen H&M Semiconductor Co.Ltd
http：//www.hmsemi.com
HM78LXX
HM78L24 ELECTRICAL CHARACTERISTICS
(At specified virtual junction temperature, Vl=26V, lo=40mA (unless otherwise noted)
Test condition *
Characteistic
Symbol
Min
23
Typ.
24
Max.
Unit
25℃
25
1㎃≤ Io≤ 40㎃
Output voltage **
Vout
V
22.8
22.8
24
25.2
26.5V≤ VI≤ 39V
1㎃≤Io≤ 70㎃
26.5≤ VI≤ 39V
29≤ VI≤ 39V
-40 ~ 125℃
24
95
78
41
28
4.8
25.2
480
400
240
120
6.5
6
Line regulation
Load regulation
Bias current
Reg line
Reg load
IB
25℃
25℃
㎷
㎷
㎃
㎃
1㎃≤ Io≤ 100㎃
1㎃≤ Io≤ 40㎃
25℃
125℃
28≤ VI≤ 39V
1㎃≤ Io≤ 40㎃
10㎐≤ f≤ 100㎑
1.5
0.1
△IB
Bias current change
-40 ~ 125℃
VN
RR
VD
Output noise voltage
Ripple rejection
25℃
25℃
25℃
82
33
㎶
dB
V
27.5≤ VI≤ 37.5V
f=120㎐
30
Dropout voltage
1.7
Notes
*. Pulse testing techniques are used to maintain the junction temperature as close to the ambient temperature as possible.
Thermal effects must be taken into account separately.
All characteristics are measured with a 0.33㎌ capacitor across the input and a 0.1㎌ capacitor across the output.
**. This specification applies only for DC power dissipation permitted by absolute maximum ratings.
Shenzhen H&M Semiconductor Co.Ltd
http：//www.hmsemi.com
HM78LXX
TO-92
Shenzhen H&M Semiconductor Co.Ltd
http：//www.hmsemi.com
HM78LXX
SO-8
D SUFFIX SOIC
(MS - 012AA)
Dimension, mm
A
8
5
Symbol
MIN
4.8
MAX
5
A
B
C
D
F
B
H
P
3.8
4
1.35
0.33
0.4
1.75
0.51
1.27
1
4
G
R x 45
C
-T-
SEATING
PLANE
G
H
J
1.27
5.72
K
M
D
J
F
M
0.25 (0.010) M T C
0°
8°
K
M
P
0.1
0.25
0.25
6.2
NOTES:
0.19
5.8
1. Dimensions A and B do not include mold flash or protrusion.
2. Maximummold flash or protrusion 0.15 mm(0.006) per side
R
0.25
0.5
for A; for B ‑ 0.25 mm(0.010) per side.
Shenzhen H&M Semiconductor Co.Ltd
http：//www.hmsemi.com
HM78LXX
Shenzhen H&M Semiconductor Co.Ltd
http：//www.hmsemi.com
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