HMG15N65F [HMSEMI]
650V /15A Trench Field Stop IGBT;型号: | HMG15N65F |
厂家: | H&M Semiconductor |
描述: | 650V /15A Trench Field Stop IGBT 双极性晶体管 |
文件: | 总10页 (文件大小:1516K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
HMG15N65/D/F
650V /15A Trench Field Stop IGBT
Features
Max Junction Temperature 150°C
VCE
IC
650
15
V
A
V
High breakdown voltage up to 650V for
improved reliability
Short Circuit Rated
VCE(SAT) IC=15A
1.65
Very Low Saturation Voltage:
V
CE(SAT) = 1.65V (Typ.) @ IC = 15A
Soft current turn-off waveforms
Applications
Soft switching applications
Air conditioning
Motor drive inverter
Product
Package
TO-220
TO-263
TO-220F
Packaging
HMG15N65
HMG15N65D
HMG15N65F
Tube
Tube
Tube
HMG15N65/D/F
650V /15A Trench Field Stop IGBT
Maximum Ratings (Tj= 25℃unless otherwise specified)
Parameter
Symbol
Value
Unit
Collector-Emitter Breakdown Voltage
VCE
650
V
DC collector current, limited by Tjmax
TC = 25°C
TC = 100°C
IC
30
15
A
A
Diode Forward current, limited by Tjmax
TC = 25°C
TC = 100°C
IF
30
15
Continuous Gate-emitter voltage
Transient Gate-emitter voltage
VGE
VGE
V
V
±20
±30
Turn off safe operating area VCE ≤650V,
Tj ≤ 150°C
-
60
45
5
A
A
Pulsed collector current, VGE=15V,
tp limited by Tjmax
ICM
Tsc
Ptot
Ptot
Short Circuit Withstand Time, VGE= 15V,
VCE≤ 400V
μs
W
W
TO-220F Power dissipation , Tj=25℃
27
105
TO-220,TO-263, Power dissipation , Tj=25℃
Operating junction temperature
Storage temperature
Tj
-40...+150
-55...+150
°C
°C
Ts
Soldering temperature, wave soldering
1.6mm (0.063in.) from case for 10s
-
260
°C
Thermal Resistance
TO-220,TO-263
1.2
TO-220F
Parameter
Symbol
Unit
4.9
5.8
IGBT thermal resistance, junction - case Rθ(j-c)
Diode thermal resistance, junction - case Rθ(j-c)
K/W
2.38
K/W
K/W
62.5
Thermal resistance, junction - ambient
Rθ(j-a)
HMG15N65/D/F
650V /15A Trench Field Stop IGBT
Electrical Characteristics of the IGBT(Tj= 25℃unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
Static Characteristics (Tested on wafers)
BVCES
VCE(SAT)
VGE(th)
ICES
Collector to Emitter Breakdown
Voltage
Collector to Emitter Saturation
Voltage
G-E Threshold Voltage
V
GE = 0V, IC = 1mA
650
-
1.65
5.0
-
-
V
V
IC = 15A, VGE = 15V
VGE = VCE, IC = 250μA
VCE = 650V, VGE = 0V
-
4.1
-
1.95
5.7
V
Collector Cut-Off Current
G-E Leakage Current
25
μA
nA
IGES
-
-
VGE = ±20V, VCE = 0V
±200
VCE=20V, IC=15A
gfs
Transconductance
-
10
-
S
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Dynamic
Input capacitance
Cies
-
-
990
56
-
-
VCE = 25V, VGE = 0V,
f = 1MHz
Output capacitance
Coes
pF
Reverse transfer
capacitance
Cres
QG
-
-
30
92
-
-
V
CC = 480V, IC = 15A,
Gate charge
nC
A
VGE = 15V
VGE=15V,tSC≤5us
VCC=400V,
Tj,start=25°C
Short circuit collector
current
IC
-
98
-
(
)
SC
HMG15N65/D/F
650V /15A Trench Field Stop IGBT
Switching Characteristic, Inductive Load(Tj= 25℃unless otherwise specified)
Parameter
Symbol
Conditions
Min.
Typ.
Max.
Unit
Dynamic
Turn-on Delay Time
td(on)
tr
td(off)
tf
-
-
-
-
-
-
15
25
-
-
-
-
-
-
ns
ns
ns
Rise Time
Tj=25C
VCC = 400V,
IC = 15A,
VGE = 0/15V,
Rg=12Ω
Turn-off Delay Time
Fall Time
60
46
ns
Turn-on Energy
Turn-off Energy
Eon
Eoff
0.75
0.1
mJ
mJ
Electrical Characteristics of the DIODE(Tj= 25℃unless otherwise specified)
Parameter
Dynamic
Symbol
Conditions
Min
Typ
Max
Unit
V
ns
A
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Current
Reverse Recovery Charge
VFM
Trr
Irr
IF = 15A
-
-
-
-
1.7
50
4
-
-
-
-
IF= 15A
VR = 300V,
di/dt =200A/μs
nC
Qrr
83
HMG15N65/D/F
650V /15A Trench Field Stop IGBT
Fig. 1 FBSOA characteristics for TO-220F
Fig. 2 FBSOA characteristics for TO-220 and TO-263
100
100
tP = 10μs
tP = 10μs
10
10
50μs
50μs
100μs
500μs
1ms
100μs
500μs
1ms
DC
DC
1
1
Ta=25°C, Tj ≤150C , VGE=15V
Ta=25°C, Tj ≤150C , VGE=15V
0.1
0.1
1
10
100
VCE(V)
1000
1
10
100
VCE(V)
1000
Fig. 3 Load Current vs. Frequency for TO-220F
Fig.4 Load Current vs. Frequency TO-220 and TO-263
40
60
35
50
80℃
80℃
30
25
40
20
30
100℃
100℃
15
20
rectangular current shape,
D=0.5, VCE=400V,
rectangular current shape,
D=0.5, VCE=400V,
10
VGE=0/15V, Rg=12Ω,Tj ≤150C
VGE=0/15V, Rg=12Ω,Tj ≤150C
10
0
5
0
1
10
100
1
10
f (KHz)
100
f (KHz)
HMG15N65/D/F
650V /15A Trench Field Stop IGBT
Fig. 5 Output characteristics
Fig. 6 Saturation voltage characteristics
50
60
25℃
VGE = 20V
150℃
17V
50
40
15V
13V
11V
40
30
20
30
20
10
0
10
VGE = 15V
0
0
1
2
3
4
5
0
1
2
3
4
5
6
7
8
VCE(V)
VCE(V)
Fig. 7 Switching times vs. gate resistor
Fig. 8 Switching times vs. collector current
1000
1000
td(off)
td(off)
tf
tf
td(on)
tr
td(on)
tr
100
100
10
10
Common Emitter
Common Emitter
VCC = 400V, VGE = 15V, IC=15A
Ta=25℃
VCC = 400V, VGE = 15V, RG=12Ω
Ta=25℃
1
1
0
10 20 30 40 50 60 70 80 90
Rg(Ω)
0
10
20
30
40
50
IC(A)
HMG15N65/D/F
650V /15A Trench Field Stop IGBT
Fig. 9 Switching loss vs. gate resistor
Fig. 10 Switching loss vs. collector current
0.9
3
Eoff
Eon
Eoff
Eon
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
2.5
2
1.5
Common Emitter
VCC = 400V, VGE = 15V, RG=12Ω
Ta=25℃
1
0.5
Common Emitter
VCC = 400V, VGE = 15V, IC=15A
Ta=25℃
0
0
10 20 30 40 50 60 70 80 90
Rg (Ω)
0
10
20
30
40
50
Ic (A)
Fig. 11 Gate charge characteristics
Fig. 12 Capacitance characteristics
10000
15
Ciss(pF)
240V
Coss(pF)
Crss(pF)
480V
12
1000
100
10
9
6
3
Common Emitter
IC= 15A ,Ta=25℃
Common Emitter
VGE = 0V, f = 1MHz
Ta=25℃
0
0
10
20
30
0
20
40
60
VCE(V)
Qg (nC)
HMG15N65/D/F
650V /15A Trench Field Stop IGBT
TO-220F package information
HMG15N65/D/F
650V /15A Trench Field Stop IGBT
TO-263 package information
HMG15N65/D/F
650V /15A Trench Field Stop IGBT
TO-220 package information
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