HMS4N70F [HMSEMI]
N-Channel Super Junction Power MOSFET â ¡;型号: | HMS4N70F |
厂家: | H&M Semiconductor |
描述: | N-Channel Super Junction Power MOSFET â ¡ |
文件: | 总10页 (文件大小:1046K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
HMS4N70,HMS4N70D,HMS4N70F
N-Channel Super Junction Power MOSFET Ⅱ
General Description
The series of devices use advanced super junction
technology and design to provide excellent RDS(ON) with low
gate charge. This super junction MOSFET fits the industry’s
AC-DC SMPS requirements for PFC, AC/DC power
conversion, and industrial power applications.
VDS
700
1200
4
V
mΩ
A
RDS(ON)TYP.
ID
Features
●New technology for high voltage device
●Low on-resistance and low conduction losses
●Small package
●Ultra Low Gate Charge cause lower driving requirements
●100% Avalanche Tested
●ROHS compliant
Application
● Power factor correction(PFC)
● Switched mode power supplies(SMPS)
● Uninterruptible Power Supply(UPS)
Schematic diagram
Package Marking And Ordering Information
Device
Device Package
Marking
HMS4N70
HMS4N70D
HMS4N70F
TO-220
HMS4N70
HMS4N70D
HMS4N70F
TO-263
TO-220F
TO-263
T
O-220
T O-220F
Table 1. Absolute Maximum Ratings (TC=25℃)
HMS4N70
Parameter
Symbol
HMS4N70DF
Unit
HMS4N70D
700
V
V
Drain-Source Voltage (VGS=0V)
Gate-Source Voltage (VDS=0V)
VDS
VGS
±30
Continuous Drain Current at Tc=25°C
4
2.5
12
4*
2.5
A
ID (DC)
ID (DC)
IDM (pluse)
PD
Continuous Drain Current at Tc=100°C
A
(Note 1)
12
A
Pulsed drain current
Maximum Power Dissipation(Tc=25℃)
46
28.5
0.23
W
Derate above 25°C
0.37
W/°C
mJ
A
(Note2)
130
2
EAS
Single pulse avalanche energy
Avalanche current(Note 1)
IAR
Repetitive Avalanche energy ,tAR limited by Tjmax
(Note 1)
0.2
EAR
mJ
Page 1
HMS4N70,HMS4N70D,HMS4N70F
HMS4N70
Parameter
Symbol
HMS4N70F
Unit
HMS4N70D
Drain Source voltage slope, VDS ≤480 V,
Reverse diode dv/dt,VDS ≤480 V,ISD<ID
Operating Junction and Storage Temperature Range
* limited by maximum junction temperature
50
15
dv/dt
dv/dt
V/ns
V/ns
°C
-55...+150
TJ,TSTG
Table 2. Thermal Characteristic
Parameter
HMS4N70
Symbol
HMS4N70F
Unit
HMS4N70D
Thermal Resistance,Junction-to-Case(Maximum)
Thermal Resistance,Junction-to-Ambient (Maximum)
RthJC
RthJA
2.7
62
4.4
80
°C /W
°C /W
Table 3. Electrical Characteristics (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
Min Typ Max
Unit
On/off states
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current(Tc=25℃)
Zero Gate Voltage Drain Current(Tc=125℃)
Gate-Body Leakage Current
Gate Threshold Voltage
BVDSS
IDSS
VGS=0V ID=250μA
VDS=700V,VGS=0V
VDS=700V,VGS=0V
VGS=±30V,VDS=0V
VDS=VGS,ID=250μA
VGS=10V, ID=2.5A
700
V
μA
μA
nA
V
1
IDSS
50
IGSS
±100
VGS(th)
RDS(ON)
2.5
3
3.5
Drain-Source On-State Resistance
Dynamic Characteristics
Forward Transconductance
Input Capacitance
1200
1400
mΩ
gFS
Clss
Coss
Crss
Qg
VDS = 20V, ID = 2.5A
4
S
280
26
PF
PF
PF
nC
nC
nC
Ω
V
DS=50V,VGS=0V,
F=1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
2.3
6.5
1.3
2.5
2.5
10
VDS=480V,ID=4A,
Gate-Source Charge
Qgs
Qgd
RG
V
GS=10V
Gate-Drain Charge
Intrinsic gate resistance
f = 1 MHz open drain
Switching times
Turn-on Delay Time
td(on)
tr
td(off)
tf
6
3
nS
nS
nS
nS
Turn-on Rise Time
VDD=380V,ID=2.5A,
RG=20Ω,VGS=10V
Turn-Off Delay Time
48
8
60
15
Turn-Off Fall Time
Source- Drain Diode Characteristics
Source-drain current(Body Diode)
Pulsed Source-drain current(Body Diode)
Forward On Voltage
ISD
ISDM
VSD
trr
4
A
A
TC=25°C
12
1.3
Tj=25°C,ISD=4A,VGS=0V
1
V
Reverse Recovery Time
150
0.85
11
nS
uC
A
Tj=25°C,IF=4A,di/dt=100A/μs
Reverse Recovery Charge
Peak reverse recovery current
Qrr
Irrm
Notes: 1.Repetitive Rating: Pulse width limited by maximum junction temperature
2. Tj=25℃,VDD=50V,VG=10V, RG=25Ω
Page 2
HMS4N70,HMS4N70D,HMS4N70F
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS (curves)
Figure1. Safe operating area for TO-220,TO-263
Figure2. Source-Drain Diode Forward Voltage
Figure3. Output characteristics
Figure4. Transfer characteristics
Figure5. Static drain-source on resistance
Figure6. RDS(ON) vs Junction Temperature
Page 3
HMS4N70,HMS4N70D,HMS4N70F
Figure7. BVDSS vs Junction Temperature
Figure8. Maximum ID vs Junction Temperature
Figure9. Gate charge waveforms
Figure10. Capacitance
Figure11. Transient Thermal Impedance for TO-220,TO-263
Figure12. Safe operating area for TO-220F
Page 4
HMS4N70,HMS4N70D,HMS4N70F
Figure13. Transient Thermal Impedance for TO-220F
Page 5
HMS4N70,HMS4N70D,HMS4N70F
Test circuit
1)Gate charge test circuit & Waveform
2)Switch Time Test Circuit:
3)Unclamped Inductive Switching Test Circuit & Waveforms
Page 6
HMS4N70,HMS4N70D,HMS4N70F
TO-263-2L Package Information
Dimensions In Millimeters
Min.
Dimensions In Inches
Min.
Symbol
Max.
4.670
0.150
1.370
0.910
1.370
0.530
1.370
10.310
8.900
Max.
0.184
0.006
0.054
0.036
0.054
0.021
0.054
0.406
0.350
A
A1
B
4.470
0.000
1.170
0.710
1.170
0.310
1.170
10.010
8.500
0.176
0.000
0.046
0.028
0.046
0.012
0.046
0.394
0.335
b
b1
c
c1
D
E
e
2.540 TYP.
0.100 TYP.
e1
L
4.980
15.050
5.080
2.340
1.300
5.180
15.450
5.480
2.740
1.700
0.196
0.593
0.200
0.092
0.051
0.204
0.608
0.216
0.108
0.067
L1
L2
L3
V
5.600 REF
0.220 REF
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HMS4N70,HMS4N70D,HMS4N70F
TO-220-3L-C Package Information
Dimensions In Millimeters
Min.
Dimensions In Inches
Min.
Symbol
Max.
4.600
2.550
0.910
1.370
0.650
1.400
10.250
9.750
12.950
Max.
0.181
0.100
0.036
0.054
0.026
0.055
0.404
0.384
0.510
A
A1
b
4.400
2.250
0.710
1.170
0.330
1.200
9.910
8.9500
12.650
0.173
0.089
0.028
0.046
0.013
0.047
0.390
0.352
0.498
b1
c
c1
D
E
E1
e
2.540 TYP.
0.100 TYP.
e1
F
4.980
2.650
7.900
0.000
12.900
2.850
5.180
2.950
8.100
0.300
13.400
3.250
0.196
0.104
0.311
0.000
0.508
0.112
0.204
0.116
0.319
0.012
0.528
0.128
H
h
L
L1
V
7.500 REF.
0.295 REF.
Φ
3.400
3.800
0.134
0.150
Page 8
HMS4N70,HMS4N70D,HMS4N70F
TO-220F Package Information
Page 9
HMS4N70,HMS4N70D,HMS4N70F
ATTENTION:
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Any and all H&M SEMI products described or contained herein do not have specifications that can handle applications that
require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications
whose failure can be reasonably expected to result in serious physical and/or material damage. Consult
with your H&M SEMI representative nearest you before using any H&M SEMI products described or contained herein in
such applications.
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H&M SEMI assumes no responsibility for equipment failures that result from using products at values
that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters)
listed in products specifications of any and all H&M SEMI products described or contained herein.
Specifications of any and all H&M SEMI products described or contained herein stipulate the performance, characteristics,
and functions of the described products in the independent state, and are not guarantees of the performance, characteristics,
and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states
that cannot be evaluated in an independent device, the customer should always evaluate and test
devices mounted in the customer’s products or equipment.
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H&M Semiconductor CO.,LTD. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could
cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or
events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe
design, redundant design, and structural design.
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Any and all information described or contained herein are subject to change without notice due to
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This catalog provides information as of Sep.2010. Specifications and information herein are subject to change without notice.
Page 10
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