GFD1300-550 [HONEYWELL]

Photodiode Detector, 1300nm Min, 1500nm Max, Through Hole Mount, TO-18, 4 PIN;
GFD1300-550
元器件型号: GFD1300-550
生产厂家: HONEYWELL SOLID STATE ELECTRONICS CENTER    HONEYWELL SOLID STATE ELECTRONICS CENTER
描述和应用:

Photodiode Detector, 1300nm Min, 1500nm Max, Through Hole Mount, TO-18, 4 PIN

放大器 光纤
PDF文件: 总3页 (文件大小:233K)
下载文档:  下载PDF数据表文档文件
型号参数:GFD1300-550参数

GFD2206

TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 42A I(D) | TO-252AA

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15 ETC

GFD25N03

TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 38A I(D) | TO-252AA

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18 ETC

GFD30N03

TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 40A I(D) | TO-252AA

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55 ETC

GFD30N03-27A

Power Field-Effect Transistor, 40A I(D), 30V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, PLASTIC, DPAK-3

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0 VISHAY

GFD30N0327B

40A, 30V, 0.015ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, D2PAK-3

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0 VISHAY

GFD3500-002

Receiver, 16Mbps, TO-18, Through Hole Mount, METAL, TO-18, 4 PIN

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0 HONEYWELL

GFD35N03

TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 53A I(D) | TO-252AA

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25 ETC

GFD50N03

TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 65A I(D) | TO-252AA

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83 ETC

GFD50N03A

TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 78A I(D) | TO-252AA

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36 ETC

GFD50N03A27B

Power Field-Effect Transistor, 78A I(D), 30V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, PLASTIC, DPAK-3

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0 VISHAY

GFD55N03

TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 75A I(D) | TO-252AA

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24 ETC

GFD55N03

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,

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1 VISHAY

GFDASPA2.24

OSCONIQ P 2226

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0 OSRAM

GF-DASPA2.24

SMT package

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0 OSRAM

GFDASPA2.24-PMPO-1-1

OSCONIQ P 2226

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0 OSRAM