SD1440-004 [HONEYWELL]
Silicon Phototransistor;
| 型号： | SD1440-004 |
| 厂家： | 
Honeywell |
| 描述： | Silicon Phototransistor |
| 文件： | 总4页 (文件大小：415K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Silicon Phototransistor
FEATURES
·
·
·
·
Compact, metal can coaxial package
24¡ (nominal) acceptance angle
Wide sensitivity ranges
Wide operating temperature range
(• 55¡C to +125¡C)
·
Mechanically and spectrally matched to SE1450
and SE1470 infrared emitting diodes
INFRA-63.TIF
DESCRIPTION
OUTLINE DIMENSIONS in inches (mm)
The SD1440 is an NPN silicon phototransistor mounted
in a glass lensed metal can coaxial package. The
package may have a tab or second lead welded to the
can as an optional feature (SD1440-XXXL). Both leads
are flexible and may be formed to fit various mounting
configurations.
Tolerance
3 plc decimals
2 plc decimals
±0.005(0.12)
±0.020(0.51)
SD1440-XXX
.091(2.26)
EMITTER
COLLECTOR
.020(0.51) DIA
.062(1.57) DIA
.079(2.01)
DIA
.076(1.93)
.010(0.25)
.095(2.41) DIA
.122(3.10)
.106(2.69)
1.000(25.40)
MIN
DIM_12a.ds4
SD1440-XXXL
.091(2.26)
.020
(0.51) DIA
EMITTER
~
~
COLLECTOR
.020
~
~
(0.51) DIA
.062(1.57) DIA
.079(2.01)
DIA
.076(1.93)
.010(0.25)
.095(2.41) DIA
.122(3.10)
.106(2.69)
1.000(25.40)
TYPICAL MIN
DIM_12b.ds4
Honeywell reserves the right to make
changes in order to improve design and
supply the best products possible.
100
h
Silicon Phototransistor
ELECTRICAL CHARACTERISTICS
PARAMETER
SYMBOL MIN TYP MAX
UNITS
TEST CONDITIONS
ABSOLUTE MAXIMUM RATINGS
SCHEMATIC
(25¡C Free-Air Temperature unless otherwise noted)
Collector-Emitter Voltage
Emitter-Collector Voltage
Power Dissipation
30 V
5 V
75 mW [À]
-55¡C to 125¡C
-65¡C to 150¡C
260¡C
Operating Temperature Range
Storage Temperature Range
Soldering Temperature (10 sec)
Notes
1. Derate linearly from 25¡C free-air temperature at the rate of
0.71 mW/¡C.
Honeywell reserves the right to make
changes in order to improve design and
101
h
supply the best products possible.
Silicon Phototransistor
SWITCHING TIME TEST CIRCUIT
SWITCHING WAVEFORM
cir_015.cdr
cir_004.cdr
Fig. 1
Responsivity vs
Angular Displacement
Fig. 2
Collector Current vs
Ambient Temperature
gra_051.ds4
gra_039.ds4
1.0
2.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
1.6
1.2
0.8
0.4
0.0
-40 -30 -20 -10
0
+10 +20 +30 +40
0
10 20 30 40 50 60 70 80
Angular displacement - degrees
Ambient temperature - °C
Fig. 3
Dark Current vs
Temperature
Fig. 4
Non-Saturated Switching Time vs
Load Resistance
gra_303.cdr
gra_041.ds4
100
10
1
10
100
1000
10000
Load resistance - Ohms
Honeywell reserves the right to make
changes in order to improve design and
supply the best products possible.
102
h
Silicon Phototransistor
Fig. 5
Spectral Responsivity
Fig. 6
Coupling Characteristics
with SE1450
gra_036.ds4
gra_006.ds4
1.0
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.8
0.6
0.4
0.2
0.0
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Lens-to-lens separation - inches
400 600 800 1000 1200
Wavelength - nm
All Performance Curves Show Typical Values
Honeywell reserves the right to make
changes in order to improve design and
supply the best products possible.
103
h
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