SD2440 [HONEYWELL]
Silicon Phototransistor;型号: | SD2440 |
厂家: | Honeywell |
描述: | Silicon Phototransistor |
文件: | 总4页 (文件大小:441K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Silicon Phototransistor
FEATURES
·
Miniature, hermetically sealed, pill style, metal
can package
·
·
48¡ acceptance angle
Wide operating temperature range
(• 55¡C to +125¡C)
·
·
·
Ideal for direct mounting to printed circuit boards
Wide sensitivity ranges
Mechanically and spectrally matched to SE2460
and SE2470 infrared emitting diodes
INFRA--1.TIF
DESCRIPTION
OUTLINE DIMENSIONS in inches (mm)
The SD2440 is an NPN silicon phototransistor mounted
in a hermetically sealed glass lensed metal can
package. This package directly mounts in a double
sided PC board.
Tolerance
3 plc decimals
2 plc decimals
±0.005(0.12)
±0.020(0.51)
DIM_013.cdr
Honeywell reserves the right to make
changes in order to improve design and
supply the best products possible.
104
h
Silicon Phototransistor
ELECTRICAL CHARACTERISTICS
PARAMETER
SYMBOL MIN TYP MAX
UNITS
TEST CONDITIONS
ABSOLUTE MAXIMUM RATINGS
SCHEMATIC
(25¡C Free-Air Temperature unless otherwise noted)
Collector-Emitter Voltage
Emitter-Collector Voltage
Power Dissipation
30 V
5 V
125 mW [À]
-55¡C to 125¡C
-65¡C to 150¡C
260¡C
Operating Temperature Range
Storage Temperature Range
Soldering Temperature (10 sec)
Notes
1. Derate linearly from 25¡C free-air temperature at the rate of
1.19 mW/¡C.
Honeywell reserves the right to make
changes in order to improve design and
105
h
supply the best products possible.
Silicon Phototransistor
SWITCHING TIME TEST CIRCUIT
SWITCHING WAVEFORM
cir_015.cdr
cir_004.cdr
Fig. 1
Responsivity vs
Angular Displacement
Fig. 2
Collector Current vs
Ambient Temperature
gra_037.ds4
gra_039.ds4
1.0
2.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
1.6
1.2
0.8
0.4
0.0
-60 -45 -30 -15
0
+15 +30 +45 +60
0
10 20 30 40 50 60 70 80
Angular displacement - degrees
Ambient temperature - °C
Fig. 3
Dark Current vs
Temperature
Fig. 4
Non-Saturated Switching Time vs
Load Resistance
gra_303.cdr
gra_041.ds4
100
10
1
10
100
1000
10000
Load resistance - Ohms
Honeywell reserves the right to make
changes in order to improve design and
supply the best products possible.
106
h
Silicon Phototransistor
Fig. 5
Spectral Responsivity
Fig. 6
Coupling Characteristics
with SE2460
gra_036.ds4
gra_015.ds4
1.0
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
400 600 800 1000 1200
Wavelength - nm
0.0
0.2
0.4
0.6
0.8
1.0
1.2
Lens-to-lens separation - inches
All Performance Curves Show Typical Values
Honeywell reserves the right to make
changes in order to improve design and
supply the best products possible.
107
h
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