SD5433-001 [HONEYWELL]
Photo Transistor, METAL CAN, TO-46, 3 PIN;
| 型号： | SD5433-001 |
| 厂家： | 
Honeywell |
| 描述： | Photo Transistor, METAL CAN, TO-46, 3 PIN 光电 |
| 文件： | 总4页 (文件大小：500K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Silicon Phototransistor
FEATURES
·
·
·
·
TO-46 metal can package
Choice of flat window or lensed package
90¡ or 18¡ (nominal) acceptance angle option
Wide operating temperature range
(• 55¡C to +125¡C)
·
·
·
External base connection for added control
High sensitivity
Mechanically and spectrally matched to
SE3450/5450, SE3455/5455 and SE3470/5470
infrared emitting diodes
INFRA-57.TIF
DESCRIPTION
OUTLINE DIMENSIONS in inches (mm)
The SD3443/5443 series consists of an NPN silicon
phototransistor mounted in a TO-46 metal can package.
The SD3443 has flat window cans providing a wide
acceptance angle, while the SD5443 has glass lensed
cans providing a narrow acceptance angle. The TO-46
packages are ideally suited for operation in hostile
environments.
Tolerance
3 plc decimals
2 plc decimals
±0.005(0.12)
±0.020(0.51)
SD3443
45°
.188 (4.77)
DIA.
.178 (4.52)
.046(1.17)
.036(.91)
.500
.219 (5.56)
DIA.
(12.70)
MIN.
.208 (5.28)
.100(2.54)DIA
NOM
The base is connected on all SD3443 and SD5433
standard products.
1
2
3
.048(1.22)
.028(.71)
.160 (4.06)
.137 (3.48)
.015
(0.36)
DIA.
.018
DIA.
(.460)
.153 (3.89)
.140 (3.56)
LEADS:
1. EMITTER(TAB)
2. BASE
3. COLLECTOR (CASE)
DIM_015.ds4
SD5443
DIM_15b.ds4
Honeywell reserves the right to make
changes in order to improve design and
supply the best products possible.
108
h
Silicon Phototransistor
ELECTRICAL CHARACTERISTICS
PARAMETER
SYMBOL MIN TYP MAX
UNITS
TEST CONDITIONS
ABSOLUTE MAXIMUM RATINGS
SCHEMATIC
(25¡C Free-Air Temperature unless otherwise noted)
Collector-Emitter Voltage
Emitter-Collector Voltage
Power Dissipation
30 V
5 V
150 mW [À]
-55¡C to 125¡C
-65¡C to 150¡C
260¡C
Operating Temperature Range
Storage Temperature Range
Soldering Temperature (10 sec)
Notes
1. Derate linearly from 25¡C free-air temperature at the rate of
1.43 mW/¡C.
Honeywell reserves the right to make
changes in order to improve design and
109
h
supply the best products possible.
Silicon Phototransistor
SWITCHING TIME TEST CIRCUIT
SWITCHING WAVEFORM
cir_03b.cdr
cir_004.cdr
Fig. 1
Responsivity vs
Fig. 2
Responsivity vs
gra_052.ds4
gra_053.ds4
Angular Displacement (SD3443)
Angular Displacement (SD5443)
1.0
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
-60 -45 -30 -15
0
+15 +30 +45 +60
-40 -30 -20 -10
0
+10 +20 +30 +40
Angular displacement - degrees
Angular displacement - degrees
Fig. 3
Dark Current vs
Temperature
Fig. 4
Non-Saturated Switching Time vs
Load Resistance
gra_303.cdr
gra_041.ds4
100
10
1
10
100
1000
10000
Load resistance - Ohms
Honeywell reserves the right to make
changes in order to improve design and
supply the best products possible.
110
h
Silicon Phototransistor
Fig. 5
Spectral Responsivity
Fig. 6
Coupling Characteristics
SE3450 with SD3443
gra_036.ds4
gra_021.ds4
1.0
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.8
0.6
0.4
0.2
0.0
0.0
0.2
0.4
0.6
0.8
1.0
400 600 800 1000 1200
Wavelength - nm
Window-to-window distance - inches
Fig. 7
Coupling Characteristics
SE5450 with SD5443
1.0
Fig. 8
Collector Current vs
Ambient Temperature
gra_024.ds4
gra_302.cdr
0.8
0.6
0.4
0.2
0.0
0
1
2
3
4
5
6
7
8
9
Lens-to-lens distance - inches
All Performance Curves Show Typical Values
Honeywell reserves the right to make
changes in order to improve design and
supply the best products possible.
111
h
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