SV5637-001 [HONEYWELL]
VCSEL Emitter, TO-46, Through Hole Mount, METAL CAN, TO-46, 2 PIN;![SV5637-001](http://pdffile.icpdf.com/pdf2/p00307/img/icpdf/SV5637-001_1849895_icpdf.jpg)
型号: | SV5637-001 |
厂家: | ![]() |
描述: | VCSEL Emitter, TO-46, Through Hole Mount, METAL CAN, TO-46, 2 PIN 光纤 |
文件: | 总4页 (文件大小:303K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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Vertical Cavity Surface Emitting LASER
GaAs 850 nm VCSEL
FEATURES
·
·
·
·
·
TO-46 metal can package, dome lens
2¡ (nominal) emission angle
Designed for low drive currents (7-15 mA)
High output vs input current performance
Mechanically and spectrally matched to SD5421
photodiode and SD5443 phototransistor
INFRA-87.TIF
DESCRIPTION
OUTLINE DIMENSIONS in inches (mm)
Tolerance
3 plc decimals
2 plc decimals
±0.005(0.12)
±0.020(0.51)
The SV5637-001 is a high• performance 850 nm VCSEL
(Vertical Cavity Surface Emitting Laser) intended for low
current, high precision applications. It incorporates
many of the desired features of an LED and the
advantages of a laser diode operating in a single
longitudinal mode. The VCSEL provides increased
power output at low drive currents. As the current
increases above its threshold, the light intensity
increases proportionally. This device is designed to be
used with standard Honeywell silicon sensors.
Applications include sensing where space, low power
consumption, precision and accuracy are critical to the
design.
.219 (5.56)
DIA.
.188 (4.77)
.040
DIA.
.208 (5.28)
.178 (4.52)
(1.02)
.500
(12.70)
MIN.
.252 (6.40)
.238 (6.05)
1
2
.100
.015
(2.54)
(0.36)
.018
DIA.
.200
(.460)
LEADS:
.160 (4.06)
.137 (3.48)
DIA.
(5.08)
1. ANODE (TAB)
2. CATHODE (CASE
.247 (6.27)
.224 (5.69)
The VCSEL is a class IIIb laser and should be
treated as a potential eye hazard. Due to the size of
the component, the applicable warning logotype,
aperture label, and certification/identification label
cannot be placed on the component itself.These
labels can be found inserted into the individual
envelope in which the VCSEL unit is packaged, or
attached to the envelope. Complies with 21CFR
1040.10 and 1040.11.
dim_104.ds4
Honeywell reserves the right to make
changes in order to improve design and
supply the best products possible.
68
h
Vertical Cavity Surface Emitting LASER
GaAs 850 nm VCSEL
ELECTRICAL CHARACTERISTICS
PARAMETER
SYMBOL MIN TYP MAX
UNITS
TEST CONDITIONS
ABSOLUTE MAXIMUM RATINGS
(25¡C Free-Air Temperature unless otherwise noted)
Storage Temperature Range
Operating Temperature Range
Soldering Temperature (10 sec)
Continuous Forward Current
Heat sinked
-40¡C to 100¡C
0¡C to 70¡C
260¡C
15 mA
Reverse Breakdown Voltage
5V @ 10 µA
Honeywell reserves the right to make
changes in order to improve design and
supply the best products possible.
69
h
Vertical Cavity Surface Emitting LASER
GaAs 850 nm VCSEL
SCHEMATIC
Fig. 1
Relative Intensity vs
Angular Displacement
sch_001.cdr
gra_308.ds4
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
-15°
-10°
-5°
0°
-5°
-10°
-15°
Angular Displacment,Typycal
Fig. 2
Radiant Intensity vs
Forward Current
gra_306.ds4
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0
2
4
6
8
10 12 14 16
Forward current - (mA)
All Performance Curves Show Typical Values
Honeywell reserves the right to make
changes in order to improve design and
supply the best products possible.
70
h
Vertical Cavity Surface Emitting LASER
GaAs 850 nm VCSEL
Honeywell reserves the right to make
changes in order to improve design and
71
h
supply the best products possible.
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