HD122 [HSMC]
NPN EPITAXIAL SILION DARLINGTON TRANSISTOR; NPN外延硅素达林顿晶体管
| 型号： | HD122 |
| 厂家： | 
HI-SINCERITY MOCROELECTRONICS |
| 描述： | NPN EPITAXIAL SILION DARLINGTON TRANSISTOR |
| 文件： | 总4页 (文件大小：43K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Spec. No. : Preliminary Data
Issued Date : 1998.12.01
Revised Date : 2000.10.01
Page No. : 1/4
HI-SINCERITY
MICROELECTRONICS CORP.
HD122
NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR
Description
The HD122 is designed for medium power linear and switching
applications.
(Ta=25°C)
Absolute Maximum Ratings
• Maximum Temperatures
Storage Temperature............................................................................................ -50 ~ +150 °C
Junction Temperature ................................................................................... +150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Tc=25°C) .................................................................................... 40 W
• Maximum Voltages and Currents
BVCBO Collector to Base Voltage.................................................................................... 100 V
BVCEO Collector to Emitter Voltage................................................................................. 100 V
BVEBO Emitter to Base Voltage........................................................................................... 5 V
IC Collector Current.............................................................................................................. 4 A
IC Collector Current (Pulse) .............................................................................................. 0.1 A
(Ta=25°C)
Electrical Characteristics
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
BVCBO
*BVCEO
BVEBO
ICEO
ICBO
IEBO
*VCE(sat)1
*VCE(sat)2
*VBE(on)
*hFE1
100
100
5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
2
1
V
V
V
mA
mA
mA
V
IC=1mA
IC=100mA
IE=100uA
VCE=50V
VCB=100V
VBE=5V
IC=1.5A, IB=30mA
IC=2A, IB=40mA
IC=3A, VCE=3V
IC=0.5A, VCE=3V
IC=3A, VCE=3V
2
2.5
2.8
2.5
-
V
V
-
1000
1000
*hFE2
-
*Pulse Test : Pulse Width ≤380us, Duty Cycle≤2%
HSMC Product Specification
Spec. No. : Preliminary Data
Issued Date : 1998.12.01
Revised Date : 2000.10.01
Page No. : 2/4
HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Sturation Voltage & Collector Current
Collector Gain & Collector Current
10000
1000
100
10
10000
CE
25°C hFE @ V =4V
CE(sat)
-40°C V
C
B
@ I =100I
CE
-40°C hFE @ V =4V
1000
CE(sat)
25°C V
C
B
@ I =100I
1
100
1
10
100
1000
10000
100
1000
Collector Current-IC (mA)
10000
Collector Current-IC (mA)
Sturation Voltage & Collector Current
On Voltage & Collector Current
10000
10000
BE(sat)
BE(sat)
C
B
-40 C V
X¢
@ I =100I
BE(on)
BE(on)
CE
@ V =4V
-40 C V
X¢
C B
@ I =100I
25 C V
X¢
1000
1000
CE
25 C V
X¢
@ V =4V
100
100
10
100
1000
10000
100
1000
10000
Collector Current-IC (mA)
Collector Current-IC (mA)
Switching Time & Collector Current
Capacitance & Reverse-Biased Voltage
10
1000
CC
V
C
B1
B2
=30V, I =250, I = -250I
Tstg
100
1
Tf
Cob
Ton
10
0.1
0.1
1
10
100
1
10
Collector Current-IC (A)
Reverse-Biased Voltage (V)
HSMC Product Specification
Spec. No. : Preliminary Data
Issued Date : 1998.12.01
Revised Date : 2000.10.01
Page No. : 3/4
HI-SINCERITY
MICROELECTRONICS CORP.
Safe Operating Area
Power Derating
1.2
100000
10000
1000
100
1.1
1
PT=1ms
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
PT=100ms
PT=1s
10
0
0
1
50
100
150
200
1
10
100
Forward-VCE (V)
Temperature (°C) -- Ta/Tc
HSMC Product Specification
Spec. No. : Preliminary Data
Issued Date : 1998.12.01
Revised Date : 2000.10.01
Page No. : 4/4
HI-SINCERITY
MICROELECTRONICS CORP.
TO-126ML Dimension
Marking :
HSMC Logo
Part Number
Date Code
Product Series
Rank
A
B
D
F
O
H
Ink Marking
E
3
2
1
C
N
Style : Pin 1.Emitter 2.Collector 3.Base
I
G
J
M
L
K
3-Lead TO-126ML Plastic Package
HSMC Package Code : D
*:Typical
Inches
Millimeters
Min.
Inches
Max.
Millimeters
DIM
DIM
Min.
Max.
Max.
3.70
0.69
1.12
1.52
3.12
2.12
1.25
1.42
Min.
-
Min.
Max.
*4.56
0.84
15.00
7.62
3.75
4.12
2.14
A
B
C
D
E
F
0.1356
0.0170
0.0344
0.0501
0.1131
0.0737
0.0294
0.0462
0.1457
0.0272
0.0444
0.0601
0.1231
0.0837
0.0494
0.0562
3.44
0.43
0.87
1.27
2.87
1.87
0.74
1.17
I
*0.1795
0.0331
0.5906
0.3003
0.1478
0.1625
0.0842
-
J
0.0268
0.5512
0.2903
0.1378
0.1525
0.0740
0.68
14.00
7.37
3.50
3.87
1.88
K
L
M
N
O
G
H
Notes : 1.Dimension and tolerance based on our Spec. dated Mar. 6,1995.
2.Controlling dimension : millimeters.
3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
4.If there is any question with packing specification or packing method, please contact your local HSMC sales office.
Material :
• Lead : 42 Alloy ; solder plating
• Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
• HSMC reserves the right to make changes to its products without notice.
• HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory :
• Head Office (Hi-Sincerity Microelectronics Corp.) : 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
Tel : 886-2-25212056 Fax : 886-2-25632712, 25368454
• Factory 1 : No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
Tel : 886-3-5983621~5 Fax : 886-3-5982931
• Factory 2 : No. 17-1, Ta-Tung Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
Tel : 886-3-5977061 Fax : 886-3-5979220
HSMC Product Specification
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