HI669A [HSMC]
NPN EPITAXIAL PLANAR TRANSISTOR; NPN外延平面晶体管
| 型号： | HI669A |
| 厂家： | 
HI-SINCERITY MOCROELECTRONICS |
| 描述： | NPN EPITAXIAL PLANAR TRANSISTOR |
| 文件： | 总3页 (文件大小：29K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Spec. No. : HE9004
Issued Date : 1998.01.25
Revised Date : 2002.09.16
Page No. : 1/3
HI-SINCERITY
MICROELECTRONICS CORP.
HI669A
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HI669A is designed for low frequency power amplifier.
TO-251
Absolute Maximum Ratings (Ta=25°C)
• Maximum Temperatures
Storage Temperature............................................................................................ -55 ~ +150 °C
Junction Temperature.................................................................................................... +150 °C
• Maximum Power Dissipation
Total Power Dissipation (Tc=25°C) ....................................................................................... 1 W
• Maximum Voltages and Currents
BVCBO Collector to Base Voltage..................................................................................... 180 V
BVCEO Collector to Emitter Voltage.................................................................................. 160 V
BVEBO Emitter to Base Voltage............................................................................................ 5 V
IC Collector Current............................................................................................................ 1.5 A
Characteristics (Ta=25°C)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
BVCBO
BVCEO
BVEBO
ICBO
*VCE(sat)
*VBE(on)
*hFE1
*hFE2
fT
180
160
5
-
-
-
-
-
-
-
-
-
-
-
-
V
V
V
uA
V
V
IC=1mA
IC=10mA
IC=1mA
10
1
1.5
200
-
VCB=160V
IC=500mA, IB=50mA
VCE=5V, IC=150mA
VCE=5V, IC=150mA
VCE=5V, IC=500mA
VCE=5V, IC=500mA
VCB=10V, f=1MHz, IE=0
-
60
30
-
-
140
14
-
-
MHz
pF
Cob
-
*Pulse Test: Pulse Width ≤380us, Duty Cycle≤2%
Classification Of hFE1
Rank
B
C
D
Range
60-120
100-200
180-320
HI669A
HSMC Product Specification
Spec. No. : HE9004
Issued Date : 1998.01.25
Revised Date : 2002.09.16
Page No. : 2/3
HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Current Gain & Collector Current
Saturation Voltage & Collector Current
100
1
CE
V
=5V
BE(sat)
V
C
B
@ I =10I
CE(sat)
V
C
B
@ I =10I
0.1
10
0.1
1
10
Collector Current (mA)
100
1000
1
10
100
1000
Collector Current (mA)
On Voltage & Collector Current
Capacitance & Reverse-Biased Voltage
1
100
BE(on)
V
CE
@ V =5V
10
Cob
1
0.1
0.1
1
10
100
0.1
1
10
Collector Current (mA)
100
1000
Reverse-Biased Voltage (V)
HI669A
HSMC Product Specification
Spec. No. : HE9004
Issued Date : 1998.01.25
Revised Date : 2002.09.16
Page No. : 3/3
HI-SINCERITY
MICROELECTRONICS CORP.
TO-251 Dimension
Marking:
A
B
C
H
I
6 6 9 A
D
H
Rank
Control Code
Date Code
F
G
Style: Pin 1.Base 2.Collector 3.Emitter
3
I
K
E
2
1
J
3-Lead TO-251 Plastic Package
HSMC Package Code: I
*: Typical
Inches
Min. Max.
Millimeters
Inches
Millimeters
Min. Max.
DIM
DIM
Min.
Max.
0.55
1.50
0.60
2.40
6.80
7.20
Min.
0.2559
Max.
-
A
B
C
D
E
F
0.0177 0.0217
0.0354 0.0591
0.0177 0.0236
0.0866 0.0945
0.2520 0.2677
0.2677 0.2835
0.45
0.90
0.45
2.20
6.40
6.80
G
H
I
J
K
6.50
-
-
-
-
*0.1811
0.0354
0.0315
-
-
-
*4.60
0.90
0.80
5.50
0.2047 0.2165
5.20
Notes: 1.Dimension and tolerance based on our Spec. dated May. 24,1995.
2.Controlling dimension: millimeters.
3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
4.If there is any question with packing specification or packing method, please contact your local HSMC sales office.
Material:
• Lead: 42 Alloy; solder plating
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
• HSMC reserves the right to make changes to its products without notice.
• HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
• Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454
• Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
Tel: 886-3-5983621~5 Fax: 886-3-5982931
HI669A
HSMC Product Specification
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