HJ669A [HSMC]
NPN EPITAXIAL PLANAR TRANSISTOR; NPN外延平面晶体管
| 型号： | HJ669A |
| 厂家： | 
HI-SINCERITY MOCROELECTRONICS |
| 描述： | NPN EPITAXIAL PLANAR TRANSISTOR |
| 文件： | 总2页 (文件大小：25K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Spec. No. : HE6830-A
Issued Date : 1994.01.25
Revised Date : 2000.11.01
Page No. : 1/2
HI-SINCERITY
MICROELECTRONICS CORP.
HJ669A
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HJ669A is designed for low frequency power amplifier.
(Ta=25°C)
Absolute Maximum Ratings
• Maximum Temperatures
Storage Temperature............................................................................................ -55 ~ +150 °C
Junction Temperature .................................................................................................... +150 °C
• Maximum Power Dissipation
Total Power Dissipation (Tc=25°C) ...................................................................................... 1 W
• Maximum Voltages and Currents
BVCBO Collector to Base Voltage.................................................................................... 180 V
BVCEO Collector to Emitter Voltage................................................................................. 160 V
BVEBO Emitter to Base Voltage........................................................................................... 5 V
IC Collector Current........................................................................................................... 1.5 A
(Ta=25°C)
Characteristics
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
BVCBO
BVCEO
BVEBO
ICBO
*VCE(sat)
*VBE(on)
*hFE1
*hFE2
fT
180
160
5
-
-
-
-
-
-
-
-
-
-
-
-
V
V
V
uA
V
V
IC=1mA
IC=10mA
IC=1mA
10
1
1.5
200
-
VCB=160V
IC=500mA, IB=50mA
VCE=5V, IC=150mA
VCE=5V, IC=150mA
VCE=5V, IC=500mA
VCE=5V, IC=500mA
VCB=10V, f=1MHz, IE=0
-
60
30
-
-
140
14
-
-
MHz
pF
Cob
-
*Pulse Test : Pulse Width ≤380us, Duty Cycle≤2%
Classification Of hFE1
Rank
B
C
Range
60-120
100-200
HSMC Product Specification
Spec. No. : HE6830-A
Issued Date : 1994.01.25
Revised Date : 2000.11.01
Page No. : 2/2
HI-SINCERITY
MICROELECTRONICS CORP.
TO-252 Dimension
Marking :
A
C
HSMC Logo
Part Number
Date Code
Product Series
D
B
Rank
Ink Mark
L
F
G
Style : Pin 1.Base 2.Collector 3.Emitter
3
2
H
E
K
I
1
J
3-Lead TO-252 Plastic Surface Mount Package
HSMC Package Code : J
*:Typical
Inches
Min. Max.
Millimeters
Inches
Min. Max.
0.0866 0.1102
Millimeters
DIM
DIM
Min.
Max.
0.55
1.95
1.50
0.60
6.80
5.80
Min.
Max.
2.80
*2.30
0.90
0.80
5.50
1.60
A
B
C
D
E
F
0.0177 0.0217
0.0650 0.0768
0.0354 0.0591
0.0177 0.0236
0.2520 0.2677
0.2125 0.2283
0.45
1.65
0.90
0.45
6.40
5.40
G
H
I
J
K
L
2.20
-
-
-
*0.0906
0.0354
0.0315
-
-
-
0.2047 0.2165
0.0551 0.0630
5.20
1.40
Notes : 1.Dimension and tolerance based on our Spec. dated May. 05,1996.
2.Controlling dimension : millimeters.
3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
4.If there is any question with packing specification or packing method, please contact your local HSMC sales office.
Material :
• Lead : 42 Alloy ; solder plating
• Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
• HSMC reserves the right to make changes to its products without notice.
• HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory :
• Head Office (Hi-Sincerity Microelectronics Corp.) : 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
Tel : 886-2-25212056 Fax : 886-2-25632712, 25368454
• Factory 1 : No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
Tel : 886-3-5983621~5 Fax : 886-3-5982931
• Factory 2 : No. 17-1, Ta-Tung Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
Tel : 886-3-5977061 Fax : 886-3-5979220
HSMC Product Specification
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