HSB1109S [HSMC]
PNP EPITAXIAL PLANAR TRANSISTOR; PNP外延平面晶体管
| 型号： | HSB1109S |
| 厂家： | 
HI-SINCERITY MOCROELECTRONICS |
| 描述： | PNP EPITAXIAL PLANAR TRANSISTOR |
| 文件： | 总4页 (文件大小：40K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Spec. No. : HE6514
Issued Date : 1993.03.15
Revised Date : 2002.02.06
Page No. : 1/4
HI-SINCERITY
MICROELECTRONICS CORP.
HSB1109S
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The HSB1109S is designed for low frequency and high voltage
amplifier applications complementary pair with HSD1609S.
TO-92
Absolute Maximum Ratings
• Maximum Temperatures
Storage Temperature............................................................................................ -50 ~ +150 °C
Junction Temperature.................................................................................... +150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C)................................................................................ 900 mW
• Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage ...................................................................................... -160 V
VCEO Collector to Emitter Voltage................................................................................... -160 V
VEBO Emitter to Base Voltage............................................................................................. -5 V
IC Collector Current ...................................................................................................... -100 mA
Characteristics (Ta=25°C)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
IC=-10uA, IE=0
IC=-1mA. IB=0
IE=-10uA, IC=0
VCB=-140V, IE=0
IC=-30mA, IB=-3mA
VCE=-5V, IC=-10mA
VCE=-5V, IC=-10mA
VCE=-5V, IC=-1mA
VCE=-5V, IC=-10mA, f=100MHz
VCB=-10V, IE=0, f=1MHz
BVCBO
BVCEO
BVEBO
ICBO
*VCE(sat)
VBE(on)
*hFE1
*hFE2
fT
-160
-160
-5
-
-
-
-
-
-
-
-
-
-
-
-
V
V
V
uA
V
V
-10
-2
-1.5
320
-
-
60
30
-
-
140
5.5
-
-
MHz
pF
Cob
-
*Pulse Test : Pulse Width ≤380us, Duty Cycle≤2%
Classification Of hFE1
Rank
B
C
D
Range
60-120
100-200
160-320
HSB1109S
HSMC Product Specification
Spec. No. : HE6514
Issued Date : 1993.03.15
Revised Date : 2002.02.06
Page No. : 2/4
HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Current Gain & Collector Current
Saturation Voltage & Collector Current
1000
100
10
1000
125oC
75oC
25oC
125oC
25oC
100
75oC
CE
hFE @ V =5V
CE(sat)
V
C
B
@ I =10I
10
0.1
1
10
100
1
10
100
C
Collector Current-I (mA)
C
Collector Current-I (mA)
ON Voltage & Collector Current
Output Capacitance &
Reverse-Blased Voltage
1000
20
15
10
5
25oC
75oC
125oC
BE(ON)
V
CE
@ V =5V
100
0
0.1
1
10
100
0.1
1
10
100
1000
C
CB
Collector Current-I (mA)
Reverse-Biased-V (V)
Cutoff Frequency & Collector Current
Safe Operating Area
1000
100
10
1000
100
10
1
1
1
10
100
1000
0.1
1
10
Collector Current-I (mA)
100
1000
C
Forward Biased Voltage (V)
HSB1109S
HSMC Product Specification
Spec. No. : HE6514
Issued Date : 1993.03.15
Revised Date : 2002.02.06
Page No. : 3/4
HI-SINCERITY
MICROELECTRONICS CORP.
Power Derating
1000
900
800
700
600
500
400
300
200
100
0
0
20
40
60
80
100
120
140
160
Ambient Temperature-Ta (oC)
HSB1109S
HSMC Product Specification
Spec. No. : HE6514
Issued Date : 1993.03.15
Revised Date : 2002.02.06
Page No. : 4/4
HI-SINCERITY
MICROELECTRONICS CORP.
TO-92 Dimension
α2
α3
Marking:
A
H
S B
1 1 0 9 S
B
C
Rank
1
2
3
Date Code
Control Code
Style: Pin 1.Emitter 2.Collector 3.Base
D
H
G
α1
I
E
F
3-Lead TO-92 Plastic Package
HSMC Package Code: A
*: Typical
Inches
Millimeters
DIM
Inches
Min. Max.
0.0142 0.0220
Millimeters
DIM
Min.
Max.
Min.
4.33
4.33
12.70
0.36
-
Max.
4.83
4.83
-
Min.
0.36
Max.
0.56
*2.54
*1.27
*5°
A
B
C
D
E
F
0.1704 0.1902
0.1704 0.1902
0.5000
0.0142 0.0220
*0.0500
0.1323 0.1480
G
H
I
-
-
-
-
-
*0.1000
*0.0500
*5°
-
-
-
-
-
-
0.56
*1.27
3.76
α1
α2
α3
-
*2°
*2°
*2°
3.36
*2°
Notes: 1.Dimension and tolerance based on our Spec. dated Apr. 25,1996.
2.Controlling dimension: millimeters.
3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
4.If there is any question with packing specification or packing method, please contact your local HSMC sales office.
Material:
• Lead: 42 Alloy; solder plating
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
• HSMC reserves the right to make changes to its products without notice.
• HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
• Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454
• Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
Tel: 886-3-5983621~5 Fax: 886-3-5982931
HSB1109S
HSMC Product Specification
相关型号：
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