HSD2118J [HSMC]
LOW VCE(sat) TRANSISTOR (20V, 5A); 低VCE （ sat）的晶体管（ 20V ， 5A ）
| 型号： | HSD2118J |
| 厂家： | 
HI-SINCERITY MOCROELECTRONICS |
| 描述： | LOW VCE(sat) TRANSISTOR (20V, 5A) |
| 文件： | 总5页 (文件大小：55K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Spec. No. : HJ200205
Issued Date : 2002.04.01
Revised Date : 2005.07.14
Page No. : 1/5
HI-SINCERITY
MICROELECTRONICS CORP.
HSD2118J
LOW VCE(sat) TRANSISTOR (20V, 5A)
Feature
• Low VCE(sat), VCE(sat)=0.6V(Typ.)(IC=4A/IB=0.1A)
• Excellent DC Current Gain Characteristic
• Complements the HSB1386J
TO-252
Structure
Epitaxial Planar Type NPN Silicon Transistor
Absolute Maximum Ratings (TA=25°C)
• Maximum Temperatures
Storage Temperature ........................................................................................................................... -55 ~ +150 °C
Junction Temperature ..................................................................................................................... 150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (TA=25°C) ...................................................................................................................... 1 W
Total Power Dissipation (TC=25°C).................................................................................................................... 10 W
• Maximum Voltages and Currents (TA=25°C)
VCBO Collector to Base Voltage ........................................................................................................................... 50 V
V
V
CEO Collector to Emitter Voltage........................................................................................................................ 20 V
EBO Emitter to Base Voltage ................................................................................................................................ 6 V
IC Collector Current ............................................................................................................................................... 5 A
IC Collector Current (Pulse).................................................................................................................................. 10 A
Electrical Characteristics (TA=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
Min.
Typ.
Max.
Unit
V
Test Conditions
50
-
-
-
IC=50uA
IC=1mA
20
-
-
V
6
-
V
IE=50uA
VCB=40V
VEB=5V
-
-
0.5
0.5
1
uA
uA
V
IEBO
-
-
*VCE(sat)
*hFE
fT
1
-
0.6
-
IC/IB=4A/0.1A
180
620
-
VCE=2V, IC=0.5A
-
-
150
30
MHz
pF
VCE=6V, IE=-50mA, f=100MHz
VCE=20V, IE=0A, f=1MHz
Cob
-
*Pulse Test: Pulse Width ≤380us, Duty Cycle≤2%
Classification of hFE
Rank
R
E
Range
180-390
370-620
HSD2118J
HSMC Product Specification
Spec. No. : HJ200205
Issued Date : 2002.04.01
Revised Date : 2005.07.14
Page No. : 2/5
HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Current Gain & Collector Current
Saturation Voltage & Collector Current
1000
1000
100
10
125oC
75oC
CE(sat)
C
B
V
@ I =20I
125oC
25oC
75oC
CE
hFE @ V =2V
25oC
100
1
1
10
100
Collector Current-I (mA)
1000
10000
0.1
1
10
100
C
1000
10000
C
Collector Current-I (mA)
Saturation Voltage & Collector Current
Saturation Voltage & Collector Current
10000
1000
100
1000
100
10
CE(sat)
C
B
V
@ I =40I
BE(sat)
V
C
B
@ I =20I
75oC
75oC
25oC
125oC
25oC
125oC
1
1
10
100
Collector Current-I (mA)
1000
10000
1
10
100
1000
10000
C
C
Collector Current-I (mA)
Capcitance & Reverse-Biased Voltage
Power Derating
1000
100
10
12
10
8
Cob
6
4
2
0
1
0
20
40
60
80
100
120
140
0.1
1
10
100
Tc(oC), Ambient Temperature
Reverse Biased Voltage (V)
HSD2118J
HSMC Product Specification
Spec. No. : HJ200205
Issued Date : 2002.04.01
Revised Date : 2005.07.14
Page No. : 3/5
HI-SINCERITY
MICROELECTRONICS CORP.
Safe Operating Area
10
PT=100mS
PT=1S
PT=1mS
1
0.1
1
10
Forward Voltage-V (V)
100
CE
HSD2118J
HSMC Product Specification
Spec. No. : HJ200205
Issued Date : 2002.04.01
Revised Date : 2005.07.14
Page No. : 4/5
HI-SINCERITY
MICROELECTRONICS CORP.
TO-252 Dimension
DIM
A
C
F
G
Min.
6.35
4.80
1.30
5.40
2.20
0.40
2.20
0.90
0.40
-
Max.
6.80
5.50
1.70
6.25
3.00
0.90
2.40
1.50
0.65
*2.30
1.05
Marking:
M
A
C
a1
Pb Free Mark
(Note)
Pb-Free: " . "
H
S D
Normal: None
2 1 1 8 J
F
H
L
Date Code
Control Code
M
N
a1
a2
a5
Note: Green label is used for pb-free packing
Pin Style: 1.Base 2.Collector 3.Emitter
G
Material:
0.65
N
2
3
1
• Lead solder plating: Sn60/Pb40 (Normal),
Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free)
• Mold Compound: Epoxy resin family,
flammability solid burning class: UL94V-0
*: Typical, Unit: mm
H
a5
L
a1
a2
3-Lead TO-252 Plastic
Surface Mount Package
HSMC Package Code: J
DIM
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
a1
a2
y1
y2
Min.
6.40
-
5.04
-
Max.
6.80
6.00
5.64
*4.34
0.80
0.90
6.30
2.90
9.80
1.00
0.96
0.86
2.40
1.10
1.22
0.60
2.50
5o
Marking:
A
B
C
D
a1
Pb Free Mark
M
(Note)
Pb-Free: " . "
H
S D
Normal: None
F
a1
2 1 1 8 J
y1
0.40
0.50
5.90
2.50
9.20
0.60
-
0.66
2.20
0.70
0.82
0.40
2.10
-
E
Date Code
Control Code
Note: Green label is used for pb-free packing
Pin Style: 1.Base 2.Collector 3.Emitter
G I
H
y1
y1
N
Material:
• Lead solder plating: Sn60/Pb40 (Normal),
Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free)
• Mold Compound: Epoxy resin family,
flammability solid burning class: UL94V-0
J
K
L
a1
O
a2
a2
y2
y2
-
3o
3-Lead TO-252 Plastic
Surface Mount Package
HSMC Package Code: J
*: Typical, Unit: mm
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
• HSMC reserves the right to make changes to its products without notice.
• HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
• Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454
• Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
Tel: 886-3-5983621~5 Fax: 886-3-5982931
HSD2118J
HSMC Product Specification
Spec. No. : HJ200205
Issued Date : 2002.04.01
Revised Date : 2005.07.14
Page No. : 5/5
HI-SINCERITY
MICROELECTRONICS CORP.
Soldering Methods for HSMC’s Products
1. Storage environment: Temperature=10oC~35oC Humidity=65%±15%
2. Reflow soldering of surface-mount devices
Figure 1: Temperature profile
t
P
Critical Zone
to T
TP
T
L
P
Ramp-up
TL
t
L
Tsmax
Tsmin
tS
Preheat
Ramp-down
25
t 25oC to Peak
Time
Profile Feature
Average ramp-up rate (TL to TP)
Preheat
Sn-Pb Eutectic Assembly
<3oC/sec
Pb-Free Assembly
<3oC/sec
- Temperature Min (Tsmin
)
100oC
150oC
150oC
200oC
- Temperature Max (Tsmax
- Time (min to max) (ts)
Tsmax to TL
)
60~120 sec
60~180 sec
- Ramp-up Rate
<3oC/sec
<3oC/sec
Time maintained above:
- Temperature (TL)
- Time (tL)
183oC
217oC
60~150 sec
240oC +0/-5oC
60~150 sec
260oC +0/-5oC
Peak Temperature (TP)
Time within 5oC of actual Peak
10~30 sec
20~40 sec
Temperature (tP)
Ramp-down Rate
<6oC/sec
<6oC/sec
Time 25oC to Peak Temperature
<6 minutes
<8 minutes
3. Flow (wave) soldering (solder dipping)
Products
Pb devices.
Peak temperature
245oC ±5oC
260oC +0/-5oC
Dipping time
5sec ±1sec
5sec ±1sec
Pb-Free devices.
HSD2118J
HSMC Product Specification
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