HSD882S [HSMC]
NPN EPITAXIAL PLANAR TRANSISTOR; NPN外延平面晶体管型号: | HSD882S |
厂家: | HI-SINCERITY MOCROELECTRONICS |
描述: | NPN EPITAXIAL PLANAR TRANSISTOR |
文件: | 总4页 (文件大小:45K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Spec. No. : HE6544
Issued Date : 1992.11.25
Revised Date : 2002.01.25
Page No. : 1/4
HI-SINCERITY
MICROELECTRONICS CORP.
HSD882S
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HSD882S is suited for the output stage of 0.75W audio, voltage
regulator, and relay driver.
TO-92
Absolute Maximum Ratings
• Maximum Temperatures
Storage Temperature............................................................................................ -55 ~ +150 °C
Junction Temperature...................................................................................... 150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C)................................................................................ 750 mW
• Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage ......................................................................................... 40 V
VCEO Collector to Emitter Voltage...................................................................................... 30 V
VEBO Emitter to Base Voltage.............................................................................................. 5 V
IC Collector Current............................................................................................................... 3 A
Characteristics (Ta=25°C)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
IC=100uA, IE=0
IC=1mA, IB=0
IE=10uA, IC=0
VCB=30V, IE=0
BVCBO
BVCEO
BVEBO
ICBO
40
30
5
-
-
-
-
30
100
-
-
-
-
-
-
-
-
-
-
-
-
-
1
1
0.5
2
-
500
-
-
V
V
V
uA
uA
V
IEBO
VEB=3V, IC=0
*VCE(sat)
*VBE(sat)
*hFE1
*hFE2
fT
IC=2A, IB=200mA
IC=2A, IB=200mA
VCE=2V, IC=20mA
VCE=2V, IC=1A
VCE=5V, IC=0.1A, f=100MHz
VCB=10V, f=1MHz, IE=0
V
90
45
MHz
pF
Cob
-
*Pulse Test: Pulse Width ≤380us, Duty Cycle≤2%
Classification of hFE
Rank
Q
P
E
Range
100-200
160-320
250-500
HSD882S
HSMC Product Specification
Spec. No. : HE6544
Issued Date : 1992.11.25
Revised Date : 2002.01.25
Page No. : 2/4
HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Current Gain & Collector Current
Saturation Voltage & Collector Current
1000
1000
125oC
25oC
75oC
75oC
100
100
25oC
125oC
10
CE
hFE @ V =2V
CE(sat)
C
B
V
@ I =10I
10
10
1
10
100
Collector Current-I (mA)
1000
10000
1
100
Collector Current-I (mA)
1000
10000
C
C
Saturation Voltage & Collector Current
Saturation Voltage & Collector Current
1000
1000
75oC
75oC
100
100
125oC
25oC
25oC
125oC
CE(sat)
V
C
B
@ I =40I
CE(sat)
V
C
B
@ I =20I
10
10
1
10
100
Collector Current-I (mA)
1000
10000
1
10
100
Collector Current-I (mA)
1000
10000
C
C
Saturation Voltage & Collector Current
Capacitance & Reverse-Biased Voltage
10000
100
75oC
Cob
1000
25oC
125oC
BE(sat)
V
C
B
@ I =10I
100
10
1
10
100
1000
10000
0.1
1
10
100
Reverse-Biased Voltage (V)
C
Collector Current-I (mA)
HSD882S
HSMC Product Specification
Spec. No. : HE6544
Issued Date : 1992.11.25
Revised Date : 2002.01.25
Page No. : 3/4
HI-SINCERITY
MICROELECTRONICS CORP.
Cutoff Frequency & Collector Current
Safe Operating Area
1000
100
10
PT=1ms
PT=100ms
PT=1s
1
0.1
0.01
CE
V
=5V
100
1
10
100
1000
1
10
100
Collector Curren (mA)
Forward Biased Voltage (V)
Power Derating
800
700
600
500
400
300
200
100
0
0
50
100
150
200
Ambient Temperature-Ta(oC)
HSD882S
HSMC Product Specification
Spec. No. : HE6544
Issued Date : 1992.11.25
Revised Date : 2002.01.25
Page No. : 4/4
HI-SINCERITY
MICROELECTRONICS CORP.
TO-92 Dimension
α2
α3
Marking:
A
H
S D
8 8 2 S
B
C
Rank
1
2
3
Date Code
Control Code
Style: Pin 1.Emitter 2.Collector 3.Base
D
H
G
α1
I
E
F
3-Lead TO-92 Plastic Package
HSMC Package Code: A
*: Typical
Inches
Millimeters
DIM
Inches
Min. Max.
0.0142 0.0220
Millimeters
DIM
Min.
Max.
Min.
4.33
4.33
12.70
0.36
-
Max.
4.83
4.83
-
Min.
0.36
Max.
0.56
*2.54
*1.27
*5°
A
B
C
D
E
F
0.1704 0.1902
0.1704 0.1902
0.5000
0.0142 0.0220
*0.0500
0.1323 0.1480
G
H
I
-
-
-
-
-
*0.1000
*0.0500
*5°
-
-
-
-
-
-
0.56
*1.27
3.76
α1
α2
α3
-
*2°
*2°
*2°
3.36
*2°
Notes: 1.Dimension and tolerance based on our Spec. dated Apr. 25,1996.
2.Controlling dimension: millimeters.
3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
4.If there is any question with packing specification or packing method, please contact your local HSMC sales office.
Material:
• Lead: 42 Alloy; solder plating
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
• HSMC reserves the right to make changes to its products without notice.
• HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
• Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
Tel : 886-2-25212056 Fax : 886-2-25632712, 25368454
• Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
Tel: 886-3-5983621~5 Fax: 886-3-5982931
HSD882S
HSMC Product Specification
相关型号:
HSD882S_06
The HSD882S is suited for the output stage of 0.75W audio, voltage regulator, and relay driver.
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