HSD882S [HSMC]

NPN EPITAXIAL PLANAR TRANSISTOR; NPN外延平面晶体管
HSD882S
型号: HSD882S
厂家: HI-SINCERITY MOCROELECTRONICS    HI-SINCERITY MOCROELECTRONICS
描述:

NPN EPITAXIAL PLANAR TRANSISTOR
NPN外延平面晶体管

晶体 晶体管 局域网
文件: 总4页 (文件大小:45K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
Spec. No. : HE6544  
Issued Date : 1992.11.25  
Revised Date : 2002.01.25  
Page No. : 1/4  
HI-SINCERITY  
MICROELECTRONICS CORP.  
HSD882S  
NPN EPITAXIAL PLANAR TRANSISTOR  
Description  
The HSD882S is suited for the output stage of 0.75W audio, voltage  
regulator, and relay driver.  
TO-92  
Absolute Maximum Ratings  
Maximum Temperatures  
Storage Temperature............................................................................................ -55 ~ +150 °C  
Junction Temperature...................................................................................... 150 °C Maximum  
Maximum Power Dissipation  
Total Power Dissipation (Ta=25°C)................................................................................ 750 mW  
Maximum Voltages and Currents (Ta=25°C)  
VCBO Collector to Base Voltage ......................................................................................... 40 V  
VCEO Collector to Emitter Voltage...................................................................................... 30 V  
VEBO Emitter to Base Voltage.............................................................................................. 5 V  
IC Collector Current............................................................................................................... 3 A  
Characteristics (Ta=25°C)  
Symbol  
Min.  
Typ.  
Max.  
Unit  
Test Conditions  
IC=100uA, IE=0  
IC=1mA, IB=0  
IE=10uA, IC=0  
VCB=30V, IE=0  
BVCBO  
BVCEO  
BVEBO  
ICBO  
40  
30  
5
-
-
-
-
30  
100  
-
-
-
-
-
-
-
-
-
-
-
-
-
1
1
0.5  
2
-
500  
-
-
V
V
V
uA  
uA  
V
IEBO  
VEB=3V, IC=0  
*VCE(sat)  
*VBE(sat)  
*hFE1  
*hFE2  
fT  
IC=2A, IB=200mA  
IC=2A, IB=200mA  
VCE=2V, IC=20mA  
VCE=2V, IC=1A  
VCE=5V, IC=0.1A, f=100MHz  
VCB=10V, f=1MHz, IE=0  
V
90  
45  
MHz  
pF  
Cob  
-
*Pulse Test: Pulse Width 380us, Duty Cycle2%  
Classification of hFE  
Rank  
Q
P
E
Range  
100-200  
160-320  
250-500  
HSD882S  
HSMC Product Specification  
Spec. No. : HE6544  
Issued Date : 1992.11.25  
Revised Date : 2002.01.25  
Page No. : 2/4  
HI-SINCERITY  
MICROELECTRONICS CORP.  
Characteristics Curve  
Current Gain & Collector Current  
Saturation Voltage & Collector Current  
1000  
1000  
125oC  
25oC  
75oC  
75oC  
100  
100  
25oC  
125oC  
10  
CE  
hFE @ V =2V  
CE(sat)  
C
B
V
@ I =10I  
10  
10  
1
10  
100  
Collector Current-I (mA)  
1000  
10000  
1
100  
Collector Current-I (mA)  
1000  
10000  
C
C
Saturation Voltage & Collector Current  
Saturation Voltage & Collector Current  
1000  
1000  
75oC  
75oC  
100  
100  
125oC  
25oC  
25oC  
125oC  
CE(sat)  
V
C
B
@ I =40I  
CE(sat)  
V
C
B
@ I =20I  
10  
10  
1
10  
100  
Collector Current-I (mA)  
1000  
10000  
1
10  
100  
Collector Current-I (mA)  
1000  
10000  
C
C
Saturation Voltage & Collector Current  
Capacitance & Reverse-Biased Voltage  
10000  
100  
75oC  
Cob  
1000  
25oC  
125oC  
BE(sat)  
V
C
B
@ I =10I  
100  
10  
1
10  
100  
1000  
10000  
0.1  
1
10  
100  
Reverse-Biased Voltage (V)  
C
Collector Current-I (mA)  
HSD882S  
HSMC Product Specification  
Spec. No. : HE6544  
Issued Date : 1992.11.25  
Revised Date : 2002.01.25  
Page No. : 3/4  
HI-SINCERITY  
MICROELECTRONICS CORP.  
Cutoff Frequency & Collector Current  
Safe Operating Area  
1000  
100  
10  
PT=1ms  
PT=100ms  
PT=1s  
1
0.1  
0.01  
CE  
V
=5V  
100  
1
10  
100  
1000  
1
10  
100  
Collector Curren (mA)  
Forward Biased Voltage (V)  
Power Derating  
800  
700  
600  
500  
400  
300  
200  
100  
0
0
50  
100  
150  
200  
Ambient Temperature-Ta(oC)  
HSD882S  
HSMC Product Specification  
Spec. No. : HE6544  
Issued Date : 1992.11.25  
Revised Date : 2002.01.25  
Page No. : 4/4  
HI-SINCERITY  
MICROELECTRONICS CORP.  
TO-92 Dimension  
α2  
α3  
Marking:  
A
H
S D  
8 8 2 S  
B
C
Rank  
1
2
3
Date Code  
Control Code  
Style: Pin 1.Emitter 2.Collector 3.Base  
D
H
G
α1  
I
E
F
3-Lead TO-92 Plastic Package  
HSMC Package Code: A  
*: Typical  
Inches  
Millimeters  
DIM  
Inches  
Min. Max.  
0.0142 0.0220  
Millimeters  
DIM  
Min.  
Max.  
Min.  
4.33  
4.33  
12.70  
0.36  
-
Max.  
4.83  
4.83  
-
Min.  
0.36  
Max.  
0.56  
*2.54  
*1.27  
*5°  
A
B
C
D
E
F
0.1704 0.1902  
0.1704 0.1902  
0.5000  
0.0142 0.0220  
*0.0500  
0.1323 0.1480  
G
H
I
-
-
-
-
-
*0.1000  
*0.0500  
*5°  
-
-
-
-
-
-
0.56  
*1.27  
3.76  
α1  
α2  
α3  
-
*2°  
*2°  
*2°  
3.36  
*2°  
Notes: 1.Dimension and tolerance based on our Spec. dated Apr. 25,1996.  
2.Controlling dimension: millimeters.  
3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.  
4.If there is any question with packing specification or packing method, please contact your local HSMC sales office.  
Material:  
Lead: 42 Alloy; solder plating  
Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0  
Important Notice:  
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.  
HSMC reserves the right to make changes to its products without notice.  
HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.  
HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.  
Head Office And Factory:  
Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.  
Tel : 886-2-25212056 Fax : 886-2-25632712, 25368454  
Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C  
Tel: 886-3-5983621~5 Fax: 886-3-5982931  
HSD882S  
HSMC Product Specification  

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