HUN2241_技术文档

Spec. No. : HN200302

Issued Date : 2003.03.01

Revised Date : 2005.01.14

Page No. : 1/6

HI-SINCERITY

MICROELECTRONICS CORP.

HUN2211 / HUN2212 / HUN2213 / HUN2214 / HUN2215

HUN2216 / HUN2230 / HUN2231 / HUN2232 / HUN2233

HUN2234 / HUN2235 / HUN2236 / HUN2237 / HUN2238

HUN2240 / HUN2241

NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network

SOT-23

Symbol:

Description

This new series of digital transistors is designed to replace a single device and its

external resistor bias network. The BRT (Bias Resistor Transistor) contains a single

transistor with a monolithic bias network consisting of two resistors; a series base

resistor and a base-emitter resistor. The BRT eliminates these individual components by

integrating them into a single device. The use of a BRT can reduce both system cost and

board space. The device is housed in the SOT-23 package which is designed for low

power surface Mount applications.

Pin 3

R1

Collector

(Output)

Pin 1

Base

(Input)

R2

Pin 2

Emitter

(Ground)

• Simplifies Circuit Design

• Reduces Board Space

• Reduces Component Count

• Moisture Sensitivity Level: 1

• ESD Rating: Human Body Model: Class1, Machine Model: Class B

• The SOT-23 package can be soldered using wave or reflow. (The modified gull-winged leads absorb thermal stress

during soldering eliminating the possibility of damage to the die.)

• Available in 8mm embossed tape and reel. Use the device number to order the 7 inch / 3,000 unit reel.

Maximum Ratings (T_A=25^oC unless otherwise noted)

Rating

Symbol

V_CBO

V_CEO

I_C

Value

50

Unit

Vdc

Collector-Base Voltage

Collector-Emitter Voltage

Collector Curretn

50

Vdc

100

200

1.6

mAdc

mW

Total Power Dissipation @ T_A=25°C

Derate above 25°C _(Note1)

P_D

mW/°C

Note1: Device mounted on a FR-4 glass epoxy printed circuit board using the minimum recommended footprint.

Thermal Characteristics

Rating

Symbol

R_θJA

Value

625

Unit

Thermal Resistance-Junction-to-Ambient

Operating and Storage Temperature Range

°C/W

T_J, T_stg

-65 to +150

°C

Maximum Temperature for Soldering Purposes

Time in Solder Bath

260

10

T_L

Sec

HUN22XX Series

HSMC Product Specification

Spec. No. : HN200302

Issued Date : 2003.03.01

Revised Date : 2005.01.14

Page No. : 2/6

HI-SINCERITY

MICROELECTRONICS CORP.

Device Marking and Resistor Values

Device

Package

SOT-23

Marking

A8A

A8B

A8C

A8D

A8E

A8F

A8G

A8H

A8J

R1(K)

10

R2(K)

10

22

47

∞

Shipping

HUN2211

HUN2212

HUN2213

HUN2214

HUN2215

HUN2216

HUN2230

HUN2231

HUN2232

HUN2233

HUN2234

HUN2235

HUN2236

HUN2237

HUN2238

HUN2240

HUN2241

3000/Tape & Reel

22

47

10

4.7

1

∞

1

2.2

4.7

22

2.2

4.7

47

100

22

∞

A8K

A8L

A8M

A8N

A8P

A8R

A8T

A8U

2.2

100

47

2.2

47

∞

100

∞

Electrical Characteristics (T_A=25°C unless otherwise noted)

Characteristic

Symbol

Min.

Typ.

Max.

Unit

Off Characteristics

Collector-Base Cutoff Current (V_CB=50V, I_E=0)

Collector-Emitter Cutoff Current (V_CE=50V, I_B=0)

I_CBO

I_CEO

-

100

500

0.5

0.2

0.1

0.2

0.9

1.9

4.3

2.3

1.5

0.18

0.13

0.2

0.05

0.13

4

nAdc

HUN2211

-

HUN2212

HUN2213

HUN2214

HUN2215

HUN2216

HUN2230

HUN2231

HUN2232

HUN2233

HUN2234

HUN2235

HUN2236

HUN2237

HUN2238

HUN2240

HUN2241

-

Emitter-Base Cutoff Current

(V_EB=6V, I_C=0)

I_EBO

-

mAdc

-

0.2

0.1

-

Collector-Base Breakdown Voltage (I_C=10uA, I_E=0)

Collector-Emitter Breakdown Voltage (I_C=2mA, I_B=0)

V_(BR)CBO

50

Vdc

*V_(BR)CEO

-

*Pulse Test: Pulse Width ≤300us, Duty Cycle≤2%

HUN22XX Series

HSMC Product Specification

Spec. No. : HN200302

Issued Date : 2003.03.01

Revised Date : 2005.01.14

Page No. : 3/6

HI-SINCERITY

MICROELECTRONICS CORP.

Electrical Characteristics (T_A=25°C unless otherwise noted)

Characteristic

Symbol

Min.

Typ.

Max.

Unit

*On Characteristics

HUN2211

HUN2212

HUN2213

HUN2214

HUN2215

HUN2216

HUN2230

HUN2231

HUN2232

HUN2233

HUN2234

HUN2235

HUN2236

HUN2237

HUN2238

HUN2240

HUN2241

35

60

100

140

350

5

-

80

160

3

8

15

DC Current Gain

(V_CE=10V, I_C=5mA)

hFE

15

30

80

200

150

140

150

140

350

80

160

-

Collector-Emitter Saturation Voltage

(I_C=10mA, I_B=0.3mA)

(I_C=10mA, I_B=5mA) HUN2230/HUN2231

(I_C=10mA, I_B=1mA)

V_CE(sat)

-

0.25

Vdc

HUN2215/HUN2216/HUN2232/HUN2233

HUN2234/HUN2235/HUN2238

*On Characteristics

HUN2211

-

0.2

HUN2212

HUN2214

HUN2215

HUN2216

HUN2230

HUN2231

HUN2232

HUN2233

HUN2234

HUN2235

HUN2238

HUN2213

HUN2240

HUN2236

HUN2237

HUN2241

Output Voltage (on)

(V_CC=5V, V_B=2.5V, R_L=1kΩ)

V_OL

Vdc

(V_CC=5V, V_B=3.5V, R_L=1kΩ)

(V_CC=5V, V_B=5.5V, R_L=1kΩ)

(V_CC=5V, V_B=4.0V, R_L=1kΩ)

(V_CC=5V, V_B=5V, R_L=1kΩ)

*Pulse Test: Pulse Width ≤300us, Duty Cycle≤2%

HUN22XX Series

HSMC Product Specification

Spec. No. : HN200302

Issued Date : 2003.03.01

Revised Date : 2005.01.14

Page No. : 4/6

HI-SINCERITY

MICROELECTRONICS CORP.

Electrical Characteristics (T_A=25°C unless otherwise noted)

Characteristic

Symbol

Min.

4.9

Typ.

Max.

Unit

Vdc

*On Characteristics

Output Voltage (off) (V_CC=5V, V_B=0.5V, R_L=1kΩ)

HUN2215

HUN2216

HUN2233

HUN2238

HUN2240

HUN2230

HUN2211

HUN2212

HUN2213

HUN2214

HUN2215

HUN2216

HUN2230

HUN2231

HUN2232

HUN2233

HUN2234

HUN2235

HUN2236

HUN2237

HUN2238

HUN2240

HUN2241

V_OH

-

(V_CC=5V, V_B=0.25V, R_L=1kΩ)

(V_CC=5V, V_B=0.05V, R_L=1kΩ)

7

15.4

32.9

7

10

22

13

28.6

61.1

13

47

10

7

10

13

3.3

0.7

1.5

3.3

15.4

1.54

32.9

70

4.7

1

6.1

1.3

2.2

4.7

22

2.9

Input Resistor

R₁

6.1

kΩ

6.1

28.6

2.86

61.1

130

2.88

61.1

130

1.2

2.2

47

100

2.2

47

1.54

32.9

70

100

1

0.8

0.17

-

Resistor Ratio HUN2211/HUN2212/HUN2213 /HUN2236

0.21

-

0.25

-

HUN2214

HUN2215/HUN2216/HUN2238/HUN2240

-

HUN2241

HUN2230/HUN2231/HUN2232

HUN2233

HUN2234

HUN2235

HUN2237

R₁/R₂

0.8

0.055

0.38

0.038

1.7

1

1.2

0.1

0.47

0.047

2.1

0.185

0.56

0.056

2.6

*Pulse Test: Pulse Width ≤300us, Duty Cycle≤2%

HUN22XX Series

HSMC Product Specification

Spec. No. : HN200302

Issued Date : 2003.03.01

Revised Date : 2005.01.14

Page No. : 5/6

HI-SINCERITY

MICROELECTRONICS CORP.

SOT-23 Dimension

DIM

A

B

C

D

G

H

J

K

L

S

V

Min.

2.80

1.20

0.89

0.30

1.70

0.013

0.085

0.32

0.85

2.10

0.25

Max.

3.04

1.60

1.30

0.50

2.30

0.10

0.177

0.67

1.15

2.75

0.65

Marking:

A

Series Code

L

(See Page 2)

A 8

Pb Free Mark

3

(Note)

Pb-Free: "

"

Normal: None

B S

1

2

Note: Pb-free product can distinguish by the green

label or the extra description on the right

side of the label.

V

G

Pin Style: 1.Base 2.Emitter 3.Collector

Material:

*: Typical, Unit: mm

• Lead solder plating: Sn60/Pb40 (Normal),

Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free)

• Mold Compound: Epoxy resin family,

flammability solid burning class: UL94V-0

C

D

H

K

J

3-Lead SOT-23 Plastic

Surface Mounted Package

HSMC Package Code: N

Important Notice:

• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.

• HSMC reserves the right to make changes to its products without notice.

• HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.

• HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.

Head Office And Factory:

• Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.

Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454

• Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C

Tel: 886-3-5983621~5 Fax: 886-3-5982931

HUN22XX Series

HSMC Product Specification

Spec. No. : HN200302

Issued Date : 2003.03.01

Revised Date : 2005.01.14

Page No. : 6/6

HI-SINCERITY

MICROELECTRONICS CORP.

Soldering Methods for HSMC’s Products

1. Storage environment: Temperature=10^oC~35^oC Humidity=65%±15%

2. Reflow soldering of surface-mount devices

Figure 1: Temperature profile

t

P

Critical Zone

to T

TP

T

L

P

Ramp-up

TL

t

L

Tsmax

Tsmin

tS

Preheat

Ramp-down

25

t 25^oC to Peak

Time

Profile Feature

Average ramp-up rate (T_Lto T_P)

Preheat

Sn-Pb Eutectic Assembly

<3^oC/sec

Pb-Free Assembly

<3^oC/sec

- Temperature Min (Ts_min

)

100^oC

150^oC

200^oC

- Temperature Max (Ts_max

- Time (min to max) (ts)

Tsmax to T_L

)

60~120 sec

60~180 sec

- Ramp-up Rate

<3^oC/sec

Time maintained above:

- Temperature (T_L)

- Time (t_L)

183^oC

217^oC

60~150 sec

240^oC +0/-5^oC

60~150 sec

260^oC +0/-5^oC

Peak Temperature (T_P)

Time within 5^oC of actual Peak

10~30 sec

20~40 sec

Temperature (t_P)

Ramp-down Rate

<6^oC/sec

Time 25^oC to Peak Temperature

<6 minutes

<8 minutes

3. Flow (wave) soldering (solder dipping)

Products

Pb devices.

Peak temperature

245^oC ±5^oC

260^oC +0/-5^oC

Dipping time

5sec ±1sec

Pb-Free devices.

HUN22XX Series

HSMC Product Specification


型号：	HUN2241
厂家：	HI-SINCERITY MOCROELECTRONICS
描述：	NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network NPN硅表面贴装晶体管与单片偏置电阻网络晶体晶体管
文件：	总6页 (文件大小：51K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

HUN2241 [HSMC]

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