TO-263 [HSMC]
N-Channel Power Field Effect Transistor; N沟道功率场效应晶体管
| 型号： | TO-263 |
| 厂家： | 
HI-SINCERITY MOCROELECTRONICS |
| 描述： | N-Channel Power Field Effect Transistor |
| 文件： | 总6页 (文件大小：74K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Spec. No. : MOS200402
Issued Date : 2004.04.01
Revised Date : 2005.03.10
Page No. : 1/6
HI-SINCERITY
MICROELECTRONICS CORP.
H06N60 Series Pin Assignment
H06N60 Series
3-Lead Plastic TO-263
Tab
N-Channel Power Field Effect Transistor
Package Code: U
Pin 1: Gate
Pin 2 & Tab: Drain
Pin 3: Source
3
2
1
Description
Tab
This high voltage MOSFET uses an advanced termination scheme to
provide enhanced voltage-blocking capability without degratding
performance over time. In addition, this advanced MOSFET is designed to
withstand high energy in avalanche and commutation modes. The new
energy efficient design also offers a drain-to-source diode with a fast
recovery time. Designed for high voltage, high speed switching
applications in power supplies, converters and PWM motor controls,
these devices are particularly well suited for bridge circuits where diode
speed and commutating safe operating areas are critical and offer
additional and saafety margin against unexpected voltage transients.
3-Lead Plastic TO-220AB
Package Code: E
Pin 1: Gate
Pin 2 & Tab: Drain
Pin 3: Source
3
2
1
3-Lead Plastic TO-220FP
Package Code: F
Pin 1: Gate
Pin 2: Drain
Pin 3: Source
Features
3
• Robust High Voltage Termination
2
D
1
• Avalanc he Energy Specified
• Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast
Recovery Diode
H06N60 Series
Symbol:
G
• Diode is Characterized for Use in Bridge Circuits
• IDSS and VDS(on) Specified at Elevated Temperature
S
Absolute Maximum Ratings
Symbol
ID
Parameter
Drain to Current (Continuous)
Value
6
Units
A
IDM
Drain to Current (Pulsed)
24
A
VGS
Gate-to-Source Voltage (Continue)
V
±20
Total Power Dissipation (TC=25oC)
H06N60U (TO-263)
H06N60E (TO-220AB)
H06N60F (TO-220FP)
110
110
40
W
W
W
PD
Derate above 25OC
H06N60U (TO-263)
H06N60E (TO-220AB)
H06N60F (TO-220FP)
W/°C
W/°C
W/oC
0.58
0.58
0.33
Tj
Operating Temperature Range
-55 to 150
-55 to 150
OC
OC
Tstg
Storage Temperature Range
Single Pulse Drain-to-Source Avalanche Enrgy-Tj=25OC
(VDD=100V, VGS=10V, IL=6A, L=10mH, RG=25Ω)
EAS
TL
250
260
mJ
Maximum Lead Temperature for Soldering Purposes, 1/8”
from case for 10 seconds
°C
Note: 1. VDD=50V, ID=10A
2. Pulse Width and frequency is limited by Tj(max) and thermal response
H06N60U, H06N60E, H06N60F
HSMC Product Specification
Spec. No. : MOS200402
Issued Date : 2004.04.01
Revised Date : 2005.03.10
Page No. : 2/6
HI-SINCERITY
MICROELECTRONICS CORP.
Thermal Characteristics
Symbol
Parameter
Value
62
Units
TO-263
1.7
Thermal Resistance Junction to Case Max.
Thermal Resistance Junction to Ambient Max.
TO-220AB
TO-220FP
1.7
3.3
OC/W
OC/W
RθJC
RθJA
ELectrical Characteristics (TJ=25OC, unless otherwise specified)
Symbol
V(BR)DSS
Characteristic
Min.
Typ. Max.
Unit
Drain-Source Breakdown Voltage (VGS=0V, ID=250uA)
Drain-Source Leakage Current (VDS=600V, VGS=0V)
Drain-Source Leakage Current (VDS=600V, VGS=0V, Tj=125OC)
Gate-Source Leakage Current-Forward (Vgsf=20V, VDS=0V)
Gate-Source Leakage Current-Reverse (Vgsr=-20V, VDS=0V)
Gate Threshold Voltage (VDS=VGS, ID=250uA)
600
-
-
V
uA
uA
nA
nA
V
-
-
-
-
2
-
2
-
-
-
-
-
-
-
-
-
-
-
-
1
IDSS
50
IGSSF
IGSSR
VGS(th)
RDS(on)
gFS
-
100
-
-100
3
4
Static Drain-Source On-Resistance (VGS=10V, ID=3.6A)*
Forward Transconductance (VDS=15V, ID=3.6A)*
Input Capacitance
1
1.2
Ω
4
-
-
S
Ciss
Coss
Crss
td(on)
tr
1498
158
29
14
19
40
26
35.5
8.1
14.1
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
VGS=0V, VDS=25V, f=1MHz
-
pF
ns
-
-
-
(VDD=300V, ID=6A, RG=9.1Ω,
VGS=10V)*
td(off)
tf
Turn-off Delay Time
Fall Time
-
-
Qg
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
50
-
Qgs
(VDS=300V, ID=6A, VGS=10V)*
nC
Qgd
-
Internal Drain Inductance (Measured from the drain lead 0.25” from
package to center of die)
LD
LS
-
-
4.5
7.5
-
-
nH
nH
Internal Drain Inductance (Measured from the drain lead 0.25” from
package to source bond pad)
*: Pulse Test: Pulse Width ≤300us, Duty Cycle≤2%
Source-Drain Diode
Symbol
Characteristic
IS=6A, VGS=0V, TJ=25oC
Min.
Typ. Max. Units
VSD
ton
trr
Forward On Voltage(1)
Forward Turn-On Time
Reverse Recovery Time
-
-
-
-
1.2
V
**
-
-
ns
ns
IS=6A, dIS/dt=100A/us
266
**: Negligible, Dominated by circuit inductance
H06N60U, H06N60E, H06N60F
HSMC Product Specification
Spec. No. : MOS200402
Issued Date : 2004.04.01
Revised Date : 2005.03.10
Page No. : 3/6
HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
On-Region Characteristic
Typical On-Resistance & Drain Current
10
9
8
7
6
5
4
3
2
1
0
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
GS
V
=10V
GS
=8V
V
GS
V
=6V
GS
=10V
V
GS
V
=5V
GS
V
=4
0
1
2
3
4
5
6
7
8
9
10 11 12
0
2
4
6
8
10
D
Drain Current-I (A)
VDS, Drain-Source Voltage(V)
Drain Current Variation with Gate Voltage &
Temperature
Typical On-Resistance & Drain Current
1.6
6
5
4
3
2
1
0
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
DS
=10 V
V
Tc= 25°C
GS
=15V
GS
V
V
=10V
0
1
2
3
4
5
6
7
8
9
10 11 12
0.0
1.0
2.0
3.0
4.0
5.0
GS
6.0
7.0
8.0
D
Gate-Source Voltage-V (V)
Drain Current-I (A)
On Resistance Variation with Temperature
Capacitance Characteristics
2.50
2.00
1.50
1.00
0.50
0.00
2000
1500
1000
500
0
GS
V =10 V
Ciss
D
I =3A
Coss
Crss
0
25
50
75
100
125
150
0.1
1
10
100
Case Temperature-Tc (oC)
V
, Deain-Source Voltage (V)
DS
H06N60U, H06N60E, H06N60F
HSMC Product Specification
Spec. No. : MOS200402
Issued Date : 2004.04.01
Revised Date : 2005.03.10
Page No. : 4/6
HI-SINCERITY
MICROELECTRONICS CORP.
TO-220AB Dimension
DIM
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
Min.
5.58
8.38
4.40
1.15
0.35
2.03
9.66
-
Max.
7.49
8.90
4.70
1.39
0.60
2.92
10.28
*16.25
*3.83
4.00
0.95
3.42
1.40
*2.54
14.27
15.87
Marking:
F
A
B
Pb Free Mark
(Note)
Pb-Free: " . "
E
Normal: None
H
E
C
D
0 6 N 6 0
Date Code
Control Code
H
K
-
M
Note: Green label is used for pb-free packing
Pin Style: 1.Gate 2 & Tab.Drain 3.Source
I
3.00
0.75
2.54
1.14
-
3
N
G
L
2
1
Material:
• Lead solder plating: Sn60/Pb40 (Normal),
Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free)
• Mold Compound: Epoxy resin family,
flammability solid burning class: UL94V-0
Tab
12.70
14.48
P
O
J
*: Typical, Unit: mm
3-Lead TO-220AB
Plastic Package
HSMC Package Code: E
TO-220FP Dimension
DIM
A
C
D
E
F
G
I
J
K
L
M
N
O
Min.
6.48
4.40
2.34
0.45
9.80
3.10
2.70
0.60
2.34
12.48
15.67
0.90
2.00
-
Max.
7.40
4.90
3.00
0.80
10.36
3.60
3.43
1.00
2.74
13.60
16.20
1.47
2.96
*5o
Marking:
A
Pb Free Mark
α4
α1
(Note)
Pb-Free: " . "
Normal: None
E
H
F
O
C
0 6 N 6 0
D
α3
α2
α5
Date Code
Control Code
G
I
Note: Green label is used for pb-free packing
Pin Style: 1.Gate 2.Drain 3.Source
J
N
3
2
1
Material:
F
• Lead solder plating: Sn60/Pb40 (Normal),
Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free)
• Mold Compound: Epoxy resin family,
flammability solid burning class: UL94V-0
K
α1/2/4/5
α3
-
*27o
M
L
*: Typical, Unit: mm
3-Lead TO-220FP
Plastic Package
HSMC Package Code: F
H06N60U, H06N60E, H06N60F
HSMC Product Specification
Spec. No. : MOS200402
Issued Date : 2004.04.01
Revised Date : 2005.03.10
Page No. : 5/6
HI-SINCERITY
MICROELECTRONICS CORP.
TO-263 Dimension
Marking:
A
L
T
U
V
Pb Free Mark
M
(Note)
3-r2
Pb-Free: " . "
a1
H
U
Normal: None
B
D
0 6 N 6 0
G
X
a2
Y
C
DP
W
Date Code
Control Code
2Xr3
D
E
r1
3
N
Note: Green label is used for pb-free packing
Pin Style: 1.Gate 2.Drain 3.Source
F
F
1
2
P
r2
O
Q
Material:
H
E
• Lead solder plating: Sn60/Pb40 (Normal),
Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free)
• Mold Compound: Epoxy resin family,
flammability solid burning class: UL94V-0
R
r2
I
J
S
a3
K
K
a2
a2
2-r2
3-Lead TO-263 Plastic
Surface Mount Package
HSMC Package Code: U
T
( ): Reference Dimension, Unit: mm
DIM
Min.
9.70
1.00
-
9.00
4.70
15.00
-
1.20
1.17
0.70
2.34
Max.
10.10
1.40
(4.60)
9.40
DIM
Max.
4.30
1.25
-0.05
2.20
1.90
-
2.24
0.45
9.80
-
Max.
4.70
1.40
0.25
2.60
2.10
(0.75)
2.84
DIM
W
X
Min.
Max.
(7.20)
(0.40)
(0.90)
(15o)
A
B
C
D
E
F
G
H
I
L
M
N
O
P
Q
R
S
T
-
-
-
-
-
-
-
-
-
-
Y
a1
a2
a3
r1
r2
r3
5.10
(3o)
15.60
(0.40)
1.60
1.37
0.90
0o~3o
(φ1.50)
0.30
(0.45)
(0.20)
0.60
10.20
(7.00)
(4.00)
J
K
U
V
DP
2.74
-
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
• HSMC reserves the right to make changes to its products without notice.
• HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
• Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454
• Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
Tel: 886-3-5983621~5 Fax: 886-3-5982931
H06N60U, H06N60E, H06N60F
HSMC Product Specification
Spec. No. : MOS200402
Issued Date : 2004.04.01
Revised Date : 2005.03.10
Page No. : 6/6
HI-SINCERITY
MICROELECTRONICS CORP.
Soldering Methods for HSMC’s Products
1. Storage environment: Temperature=10oC~35oC Humidity=65%±15%
2. Reflow soldering of surface-mount devices
Figure 1: Temperature profile
t
P
Critical Zone
to T
TP
T
L
P
Ramp-up
TL
t
L
Tsmax
Tsmin
tS
Preheat
Ramp-down
25
t 25oC to Peak
Time
Profile Feature
Average ramp-up rate (TL to TP)
Preheat
Sn-Pb Eutectic Assembly
<3oC/sec
Pb-Free Assembly
<3oC/sec
- Temperature Min (Tsmin
)
100oC
150oC
150oC
200oC
- Temperature Max (Tsmax
- Time (min to max) (ts)
Tsmax to TL
)
60~120 sec
60~180 sec
- Ramp-up Rate
<3oC/sec
<3oC/sec
Time maintained above:
- Temperature (TL)
- Time (tL)
183oC
217oC
60~150 sec
240oC +0/-5oC
60~150 sec
260oC +0/-5oC
Peak Temperature (TP)
Time within 5oC of actual Peak
10~30 sec
20~40 sec
Temperature (tP)
Ramp-down Rate
<6oC/sec
<6oC/sec
Time 25oC to Peak Temperature
<6 minutes
<8 minutes
3. Flow (wave) soldering (solder dipping)
Products
Pb devices.
Peak temperature
245oC ±5oC
260oC +0/-5oC
Dipping time
5sec ±1sec
5sec ±1sec
Pb-Free devices.
H06N60U, H06N60E, H06N60F
HSMC Product Specification
相关型号：
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