2SC4177 [HTSEMI]
TRANSISTOR (NPN); 晶体管（ NPN ）
| 型号： | 2SC4177 |
| 厂家： | 
SHENZHEN JIN YU SEMICONDUCTOR CO., LTD. |
| 描述： | TRANSISTOR (NPN) |
| 文件： | 总1页 (文件大小：454K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SC4177
TRANSISTOR (NPN)
FEATURES
High DC Current Gain
Complementary to 2SA1611
High Voltage
SOT–323
APPLICATIONS
General Purpose Amplification
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
1. BASE
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Value
Unit
V
2. EMITTER
3. COLLECTOR
Collector-Base Voltage
60
V
Collector-Emitter Voltage
Emitter-Base Voltage
50
V
5
Collector Current
100
mA
mW
℃/W
℃
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
150
PC
RΘJA
Tj
833
150
Storage Temperature
Tstg
-55～+150
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
Min
60
50
5
Typ
Max
Unit
V(BR)CBO IC=100µA, IE=0
V(BR)CEO IC=1mA, IB=0
V(BR)EBO IE=100µA, IC=0
V
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
V
ICBO
IEBO
VCB=60V, IE=0
VEB=5V, IC=0
100
100
600
0.3
1
nA
nA
Emitter cut-off current
hFE*
VCE(sat)
VBE(sat)
VBE
VCE=6V, IC=1mA
90
DC current gain
IC=100mA, IB=10mA
IC=100mA, IB=10mA
VCE=6V, IC=1mA
V
V
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter voltage
0.55
0.65
V
fT
VCE=6V, IC=10mA
VCB=6V, IE=0, f=1MHz
250
3
MHz
pF
Transition frequency
Cob
Collector output capacitance
*Pulse test: pulse width ≤350μs, duty cycle≤ 2.0%.
CLASSIFICATION OF hFE
RANK
L4
90–180
L4
L5
135–270
L5
L6
L7
300–600
L7
RANGE
200–400
MARKING
L6
1
JinYu
semiconductor
www.htsemi.com
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