2SD2098 [HTSEMI]
Excellent DC current gain characteristics Complements the 2SB1386; 优良的直流电流增益特性补充了2SB1386
| 型号： | 2SD2098 |
| 厂家： | 
SHENZHEN JIN YU SEMICONDUCTOR CO., LTD. |
| 描述： | Excellent DC current gain characteristics Complements the 2SB1386 |
| 文件： | 总3页 (文件大小：798K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SD2098
FEATURES
SOT-89
1. BASE
z
z
Excellent DC current gain characteristics
Complements the 2SB1386
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
2. COLLECTOR
3. EMITTER
1
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Value
50
Units
V
2
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
3
20
V
6
V
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
5
A
PC
500
150
-55-150
mW
TJ
℃
Tstg
℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
MIN
50
20
6
TYP
MAX
UNIT
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
V(BR)CBO IC=50μA,IE=0
V(BR)CEO IC=1mA,IB=0
V(BR)EBO IE=50μA, =0
V
V
ICBO
IEBO
hFE
VCB=40V,IE=0
0.5
0.5
390
1
μA
μA
Emitter cut-off current
VEB=5V,IC=0
DC current gain
VCE=2V,IC=0.5A
120
Collector-emitter saturation voltage
Transition frequency
VCE(sat)
fT
IC=4A,IB=100mA
VCE=6V,IC=50mA,f=100MHz
VCB=20V,IE=0,f=1MHz
V
150
30
MHz
pF
Collector output capacitance
Cob
CLASSIFICATION OF hFE
Rank
Q
R
Range
120-270
AHQ
180-390
AHR
Marking
1
JinYu
semiconductor
www.htsemi.com
2SD2098
2
JinYu
semiconductor
www.htsemi.com
2SD2098
3
JinYu
semiconductor
www.htsemi.com
相关型号：
©2020 ICPDF网 联系我们和版权申明