BC817-16 [HTSEMI]
TRANSISTOR (NPN); 晶体管（ NPN ）
| 型号： | BC817-16 |
| 厂家： | 
SHENZHEN JIN YU SEMICONDUCTOR CO., LTD. |
| 描述： | TRANSISTOR (NPN) |
| 文件： | 总2页 (文件大小：279K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BC817
TRANSISTOR (NPN)
BC817-16
BC817-25
BC817-40
SOT-23
FEATURES
1. BASE
z
z
z
z
z
For general AF applications
High collector current
High current gain
2. EMITTER
3. COLLECTOR
Low collector-emitter saturation voltage
Complementary types: BC807 (PNP)
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Symbol
Parameter
Value
Units
V
VCBO
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
50
VCEO
VEBO
IC
45
V
5
V
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
0.5
A
PC
0.3
W
℃
℃
Tj
150
-55-150
Tstg
Storage Temperature
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
VCBO
Test
conditions
MIN
50
45
5
MAX
UNIT
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
IC= 10μA, IE=0
VCEO
IC= 10mA, IB=0
V
VEBO
IE= 1μA, IC=0
V
μA
ICBO
VCB= 45 V , IE=0
VEB= 4V, IC=0
0.1
0.1
600
μA
Emitter cut-off current
IEBO
hFE(1)
hFE(2)
VCE(sat)
VBE(sat)
VBE
VCE= 1V, IC= 100mA
VCE= 1V, IC= 500mA
IC= 500mA, IB= 50mA
IC= 500mA, IB= 50mA
VCE= 1 V, IC= 500mA
VCB=10V ,f=1MHz
100
40
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter voltage
0.7
1.2
1.2
V
V
V
10
Collecter capactiance
Cob
pF
V
CE= 5 V,
IC= 10mA
Transition frequency
fT
100
MHz
f=100MHz
CLASSIFICATION OF hFE
(1)
Rank
Range
Marking
BC817-16
BC817-25
160-400
6B
BC817-40
100-250
6A
250-600
6C
1
JinYu
semiconductor
www.htsemi.com
Date:2011/05
BC817
Typical Characteristics
2
JinYu
semiconductor
www.htsemi.com
Date:2011/05
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