BC857BV [HTSEMI]
DUAL TRANSISTOR (PNP); 双晶体管（ PNP ）
| 型号： | BC857BV |
| 厂家： | 
SHENZHEN JIN YU SEMICONDUCTOR CO., LTD. |
| 描述： | DUAL TRANSISTOR (PNP) |
| 文件： | 总2页 (文件大小：593K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BC857BV
DUAL TRANSISTOR (PNP)
FEATURES
SOT-563
z
Epitaxial Die Construction
Complementary NPN Types Available
(BC847BV)
z
z
Ultra-Small Surface Mount Package
Marking: K5V
MAXIMUM RATINGS (TA=25℃ unless otherwise noted )
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Collector-Base Voltage
Value
-50
Units
V
Collector-Emitter Voltage
Emitter-Base Voltage
-45
V
-5
V
Collector Current -Continuous
Collector Power Dissipation
Thermal Resistance. Junction to Ambient Air
Junction Temperature
-0.1
A
PC
0.15
W
RθJA
TJ
833
℃/W
℃
150
Storage Temperature
-55 to +150
Tstg
℃
ELECTRICAL CHARACTERISTICS(Tamb=25℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
MIN
-50
-45
-5
TYP
MAX
UNIT
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
V(BR)CBO IC=-10μA,IE=0
V(BR)CEO IC=-10mA,IB=0
V(BR)EBO IE=-1μA,IC=0
V
V
V
ICBO
hFE
VCB=-30V,IE=0
-15
475
-0.1
-0.4
nA
DC current gain
VCE=-5V,IC=-2mA
220
VCE(sat)(1) IC=-10mA,IB=-0.5mA
VCE(sat)(2) IC=-100mA,IB=-5mA
VBE(sat)(1) IC=-10mA,IB=-0.5mA
VBE(sat)(2) IC=-100mA,IB=-5mA
V
V
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter voltage
-0.7
-0.9
V
V
VBE(1)
VBE(2)
fT
VCE=-5V,IC=-2mA
-0.6
100
-0.75
-0.82
V
VCE=-5V,IC=-10mA
V
Transition frequency
VCE=-5V,IC=-10mA,f=100MHz
VCB=-10V,IE=0,f=1MHz
MHz
pF
Collector output capacitance
Cob
4.5
10
VCE=-5V,Ic=-0.2mA,
Noise figure
NF
dB
f=1kHZ,Rs=2KΩ,BW=200Hz
1
JinYu
semiconductor
www.htsemi.com
Date:2011/05
BC857BV
Typical Characteristics
2
JinYu
semiconductor
www.htsemi.com
Date:2011/05
相关型号：
BC857BW
PNP Silicon AF Transistors (For AF input stages and driver applications High current gain Low collector-emitter saturation voltage)
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