BCV47 [HTSEMI]
TRANSISTOR (NPN); 晶体管（ NPN ）
| 型号： | BCV47 |
| 厂家： | 
SHENZHEN JIN YU SEMICONDUCTOR CO., LTD. |
| 描述： | TRANSISTOR (NPN) |
| 文件： | 总1页 (文件大小：334K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BCV47
TRANSISTOR (NPN)
SOT–23
FEATURES
High Collector Current
High Current Gain
MARKING:FG
1. BASE
2. EMITTER
3. COLLECTOR
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Value
Unit
V
Collector-Base Voltage
80
V
Collector-Emitter Voltage
Emitter-Base Voltage
60
V
10
Collector Current
500
mA
mW
℃/W
℃
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
300
PC
RΘJA
Tj
416
150
Storage Temperature
Tstg
-55～+150
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
Min
Typ
Max
Unit
V(BR)CBO
IC=100µA, IE=0
80
60
10
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
V(BR)CEO
V(BR)EBO
ICBO
IC=10mA, IB=0
V
V
IE=10µA, IC=0
VCB=60V, IE=0
0.1
0.1
µA
µA
IEBO
VEB=4V, IC=0
Emitter cut-off current
hFE(1)
hFE(2)
hFE(3)
hFE(4)
VCE(sat)
VBE(sat)
fT
VCE=1V, IC=100µA
VCE=5V, IC=10mA
VCE=5V, IC=100mA
VCE=5V, IC=0.5A
2000
4000
10000
2000
DC current gain
IC=100mA, IB=0.1mA
IC=100mA, IB=0.1mA
VCE=5V,IC=50mA, f=100MHz
VCB=10V, IE=0, f=1MHz
1
V
V
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
1.5
170
3.5
MHz
pF
Cob
Collector output capacitance
1
JinYu
semiconductor
www.htsemi.com
Date:2011/05
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