BCX54 [HTSEMI]
TRANSISTOR (NPN); 晶体管（ NPN ）
| 型号： | BCX54 |
| 厂家： | 
SHENZHEN JIN YU SEMICONDUCTOR CO., LTD. |
| 描述： | TRANSISTOR (NPN) |
| 文件： | 总2页 (文件大小：488K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BCX54,BCX55,BCX56
TRANSISTOR (NPN)
SOT-89-3L
FEATURES
z
z
z
PNP Complements to BCX51,BCX52,BCX53
1. BASE
Low Voltage
High Current
2. COLLECTOR
3. EMITTER
APPLICATIONS
z
Driver Stages of Audio Amplifiers
MARKING:BCX54:BA, BCX54-10:BC, BCX54-16:BD
BCX55:BE, BCX55-10:BG, BCX55-16BM
BCX56:BH, BCX56-10:BK, BCX56-16:BL
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
BCX54
Value
45
Unit
VCBO
Collector-Base Voltage
V
BCX55
BCX56
BCX54
BCX55
BCX56
60
100
45
Collector-Emitter Voltage
VCEO
V
60
80
VEBO
IC
Emitter-Base Voltage
Collector Current
5
V
A
1
PC
Collector Power Dissipation
500
250
150
-55~+150
mW
℃/W
℃
RθJA
Tj
Thermal Resistance From Junction To Ambient
Junction Temperature
Tstg
Storage Temperature
℃
1
JinYu
semiconductor
www.htsemi.com
Date:2011/05
BCX54,BCX55,BCX56
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
Min
45
60
100
45
60
80
5
Typ
Max
Unit
BCX54
BCX55
BCX56
BCX54
BCX55
BCX56
Collector-base breakdown voltage
V(BR)CBO
IC=100µA,IE=0
IC=1mA,IB=0
V
Collector-emitter breakdown voltage
V(BR)CEO
V
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
V(BR)EBO
ICBO
IE=100µA,IC=0
VCB=30V,IE=0
V
0.1
0.1
µA
µA
IEBO
VEB=5V,IC=0
hFE(1)
hFE(2)
hFE(3)
VCE(sat)
VBE
VCE=2V, IC=5mA
VCE=2V, IC=150mA
VCE=2V, IC=0.5A
IC=0.5A,IB=50mA
VCE=2V, IC=0.5A
40
63
25
DC current gain
250
Collector-emitter saturation voltage
Base -emitter voltage
0.5
1
V
V
fT
VCE=5V,IC=10mA, f=100MHz
130
MHz
Transition frequency
CLASSIFICATION OF hFE(2)
BCX54
BCX54-10
BCX55-10
BCX56-10
BCX54-16
BCX55-16
BCX56-16
BCX55
BCX56
RANK
RANGE
63–250
63–160
100–250
2
JinYu
semiconductor
www.htsemi.com
Date:2011/05
相关型号：
BCX54-10
NPN Silicon AF Transistors (For AF driver and output stages High collector current)
INFINEON
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