DTC124ECA [HTSEMI]

DIGITAL TRANSISTOR (NPN); 数字晶体管( NPN )
DTC124ECA
元器件型号: DTC124ECA
生产厂家: SHENZHEN JIN YU SEMICONDUCTOR CO., LTD.    SHENZHEN JIN YU SEMICONDUCTOR CO., LTD.
描述和应用:

DIGITAL TRANSISTOR (NPN)
数字晶体管( NPN )

晶体数字晶体管开关光电二极管
PDF文件: 总2页 (文件大小:412K)
下载文档:  下载PDF数据表文档文件
型号参数:DTC124ECA参数
是否Rohs认证 符合
生命周期Obsolete
包装说明IN-LINE, R-PSIP-T3
针数3
Reach Compliance Codeunknown
ECCN代码EAR99
HTS代码8541.21.00.95
风险等级5.58
其他特性DIGITAL, BUILT-IN BIAS RESISTOR RATIO IS 2.1
最大集电极电流 (IC)0.05 A
集电极-发射极最大电压50 V
配置SINGLE WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE)68
JESD-30 代码R-PSIP-T3
元件数量1
端子数量3
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式IN-LINE
峰值回流温度(摄氏度)NOT SPECIFIED
极性/信道类型NPN
最大功率耗散 (Abs)0.3 W
认证状态Not Qualified
子类别BIP General Purpose Small Signal
表面贴装NO
端子形式THROUGH-HOLE
端子位置SINGLE
处于峰值回流温度下的最长时间NOT SPECIFIED
晶体管应用SWITCHING
晶体管元件材料SILICON
Base Number Matches1
MAX34334CSE前5页PDF页面详情预览
DTC124EE/DTC124EUA/DTC124ECA/DTC124EKA/DTC124ESA
DIGITAL TRANSISTOR (NPN)
Features
1. Built-in bias resistors enable the configuration of an inverter circuit without
connecting external input resistors(see equivalent circuit).
2. The bias resistors consist of thin-film resistors with complete isolation to
allow negative biasing of the input. They also have the advantage of
almost completely eliminating parasitic effects.
3. Only the on/off conditions need to be set for operation, making device
design easy.
PIN CONNENCTIONS AND MARKING
DTC124EE
DTC124EUA
SOT-523
Addreviated symbol: 25
SOT-323
Addreviated symbol: 25
DTC124EKA
DTA114ECA
DTC124ECA
SOT-23
SOT-23-3L
Addreviated symbol: 25
SOT-23
Addreviated symbol: 25
DTC124ESA
TO-92S
1 
JinYu
semiconductor
www.htsemi.com
D½½½:2011/05
DTC124EE/DTC124EUA/DTC124ECA/DTC124EKA/DTC124ESA
Absolute maximum ratings(Ta=25℃)
Parameter
Supply voltage
Input voltage
Output current
Power dissipation
Junction temperature
Storage temperature
Symbol
V
CC
V
IN
I
O
I
C(MAX)
Pd
Tj
Tstg
150
E
Limits (DTC124E
UA
KA
50
-10~40
30
100
200
150
-55~150
)
CA
SA
Unit
V
V
mA
300
mW
Electrical characteristics (Ta=25℃)
Parameter
Input voltage
Output voltage
Input current
Output current
DC current gain
Input resistance
Resistance ratio
Transition frequency
Symbol
V
I(off)
V
I(on)
V
O(on)
I
I
I
O(off)
G
I
R
1
R
2
/R
1
f
T
56
15.4
0.8
22
1
250
28.6
1.2
MHz
V
O
=10V, I
O
=5mA, f=100MHz
KΩ
3
0.1
0.3
0.36
0.5
Min.
Typ
Max.
0.5
Unit
V
V
mA
µA
Conditions
V
CC
=5V, I
O
=100µA
V
O
=0.2V, I
O
=5
mA
I
O
/I
I
=10mA/0.5mA
V
I
=5V
V
CC
=50V, V
I
=0
V
O
=5V, I
O
=5mA
Typical Characteristics
2 
JinYu
semiconductor
www.htsemi.com
D½½½:2011/05
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