EMH4 [HTSEMI]
digital transistor (NPN+ NPN); 数字晶体管（ NPN + NPN ）
| 型号： | EMH4 |
| 厂家： | 
SHENZHEN JIN YU SEMICONDUCTOR CO., LTD. |
| 描述： | digital transistor (NPN+ NPN) |
| 文件： | 总1页 (文件大小：291K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
EMH4
digital transistor (NPN+NPN)
SOT-563
FEATURES
z
z
z
Two DTC114T chips in a package
Transistor elements are independent, eliminating interference
Mounting cost and area can be cut in half.
1
External circuit
MARKING: H4
Absolute maximum ratings (Ta=25℃)
Parameter
Symbol
Limits
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
V(BR)CBO
V(BR)CEO
V(BR)EBO
IC
50
50
5
V
V
V
100
mA
Collector Power dissipation
PC
150
mW
Junction temperature
Storage temperature
Tj
150
℃
℃
Tstg
-55~150
Electrical characteristics (Ta=25℃)
Parameter
Symbol
Min.
50
50
5
Typ
Max.
Unit
V
Conditions
Collector-base breakdown voltage
V(BR)CBO
IC=50μA
IC=1mA
Collector-emitter breakdown voltage V(BR)CEO
V
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
V(BR)EBO
ICBO
IEBO
VCE(sat)
hFE
V
IE=50μA
0.5
0.5
0.3
600
13
μA
μA
V
VCB=50V
VEB=4V
Collector-emitter saturation voltage
DC current transfer ratio
Input resistance
IC=10mA,IB=1mA
VCE=5V,IC=1mA
100
7
R1
10
KΩ
Transition frequency
fT
250
MHz
VCE=10V ,IE=-5mA,f=100MHz
1
JinYu
semiconductor
www.htsemi.com
Date:2011/05
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