KTA1668 [HTSEMI]
TRANSISTOR (PNP); 晶体管（ PNP ）
| 型号： | KTA1668 |
| 厂家： | 
SHENZHEN JIN YU SEMICONDUCTOR CO., LTD. |
| 描述： | TRANSISTOR (PNP) |
| 文件： | 总3页 (文件大小：584K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
KTA1668
TRANSISTOR (PNP)
SOT-89
1. BASE
FEATURES
z
High voltage: VCEO=-60V
High transistors frequency
z
2. COLLECTOR
3. EMITTER
1
2
3
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Value
Units
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
-80
V
-60
V
-5
V
-1
A
PC
Collector power dissipation
Junction Temperature
Storage Temperature
500
150
-55-150
mW
TJ
℃
Tstg
℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
MIN
-80
-60
-5
TYP
MAX
UNIT
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
V(BR)CBO IC=-0.1mA,IE=0
V(BR)CEO IC=-1mA,IB=0
V(BR)EBO IE=-0.1mA,IC=0
V
V
ICBO
IEBO
VCB=-50V,IE=0
-0.1
-0.1
200
μA
μA
Emitter cut-off current
VEB=-4V,IC=0
hFE1
VCE=-2V,IC=-50mA
VCE=-2V,IC=-1A
60
30
DC current gain
hFE2
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
VCE(sat)
VB E(sat)
fT
IC=-500mA,IB=-50mA
IC=-500mA,IB=-50mA
VCE=-10V,IC=-50mA, f=100MHz
VCB=-10V,IE=0,f=1MHz
-0.7
-1.2
V
V
150
12
MHz
pF
Collector output capacitance
Cob
CLASSIFICATION OF hFE
Rank
O
Y
60-120
JO
100-200
Range
Marking
JY
1
JinYu
semiconductor
www.htsemi.com
Date:2011/05
KTA1668
Typical Characteristics
2
JinYu
semiconductor
www.htsemi.com
Date:2011/05
KTA1668
3
JinYu
semiconductor
www.htsemi.com
Date:2011/05
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