KTC4372 [HTSEMI]
TRANSISTOR (NPN); 晶体管（ NPN ）
| 型号： | KTC4372 |
| 厂家： | 
SHENZHEN JIN YU SEMICONDUCTOR CO., LTD. |
| 描述： | TRANSISTOR (NPN) |
| 文件： | 总1页 (文件大小：331K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
KTC4372
TRANSISTOR (NPN)
SOT-89-3L
FEATURES
z
z
z
z
Small Flat Package
1. BASE
High Voltage Switching Application
High Voltage
2. COLLECTOR
3. EMITTER
High Transition Frequency
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Collector-Base Voltage
Value
200
Unit
V
Collector-Emitter Voltage
Emitter-Base Voltage
150
V
5
V
Collector Current
50
mA
mW
℃/W
℃
PC
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
500
RθJA
Tj
250
150
Tstg
Storage Temperature
-55~+150
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
Test
conditions
Min
200
150
5
Typ
Max
Unit
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
IC= 0.1mA,IE=0
IC=1mA,IB=0
V
IE=0.1mA,IC=0
V
VCB=200V,IE=0
100
100
240
0.5
1
nA
nA
Emitter cut-off current
IEBO
VEB=5V,IC=0
DC current gain
hFE
VCE=5V, IC=10mA
IC=10mA,IB=1mA
VCE=5V, IC=30mA
VCB=10V,IE=0, f=1MHz
VCE=30V,IC= 10mA
70
Collector-emitter saturation voltage
Base-emitter voltage
VCE(sat)
VBE
V
V
5
pF
Collector output capacitance
Transition frequency
Cob
fT
120
MHz
CLASSIFICATION OF hFE
O
Y
120–240
AY
RANK
RANGE
70–140
AO
MARKING
1
JinYu
semiconductor
www.htsemi.com
Date:2011/05
相关型号：
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