KTD1898 [HTSEMI]
TRANSISTOR (NPN); 晶体管（ NPN ）
| 型号： | KTD1898 |
| 厂家： | 
SHENZHEN JIN YU SEMICONDUCTOR CO., LTD. |
| 描述： | TRANSISTOR (NPN) |
| 文件： | 总1页 (文件大小：499K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
KTD198
SOT-89-3L
TRANSISTOR (NPN)
FEATURES
1. BASE
z
z
Small Flat Package
2. COLLECTOR
3. EMITTER
General Purpose Application
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Collector-Base Voltage
Value
100
Unit
V
Collector-Emitter Voltage
Emitter-Base Voltage
80
V
5
V
Collector Current
1
A
PC
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
500
mW
℃/W
℃
RθJA
Tj
250
150
Tstg
Storage Temperature
-55~+150
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
Test
conditions
Min
100
80
Typ
Max
Unit
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
IC=0.1mA,IE=0
V
V
IC=1mA,IB=0
IE=0.1mA,IC=0
5
V
VCB=80V,IE=0
1
1
µA
µA
Emitter cut-off current
IEBO
VEB=4V,IC=0
DC current gain
hFE
VCE=3V, IC=500mA
IC=500mA,IB=20mA
VCB=10V,IE=0, f=1MHz
70
400
0.4
Collector-emitter saturation voltage
Collector output capacitance
VCE(sat)
Cob
V
20
pF
VCE=10V,IC=50mA,
f=100MHz
fT
100
MHz
Transition frequency
CLASSIFICATION OF hFE
RANK
RANGE
O
70–140
ZO
Y
GR
120–240
200–400
MARKING
ZY
ZG
1
JinYu
semiconductor
www.htsemi.com
Date:2011/05
相关型号：
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