MM1Z22B [HTSEMI]
SILICON PLANAR ZENER DIODES; 硅平面齐纳二极管
| 型号： | MM1Z22B |
| 厂家： | 
SHENZHEN JIN YU SEMICONDUCTOR CO., LTD. |
| 描述： | SILICON PLANAR ZENER DIODES |
| 文件： | 总3页 (文件大小：586K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MM1Z2V2B~MM1Z39B
SILICON PLANAR ZENER DIODES
Features
PINNING
• Total power dissipation: max. 500 mW
• Small plastic package suitable for
surface mounted design
• High reliability
DESCRIPTION
Cathode
PIN
1
Anode
2
2
1
Top View
Simplified outline SOD-123 and symbol
O
Absolute Maximum Ratings (Ta = 25 C)
Parameter
Symbol
Ptot
Value
500
Unit
mW
Power Dissipation
O
C
Junction Temperature
Tj
150
O
C
Storage Temperature Range
TStg
- 55 to + 150
O
Characteristics at Ta = 25 C
Parameter
Symbol
RthA
Max.
340
Unit
O
Thermal Resistance Junction to Ambient Air
C/W
Forward Voltage
at IF = 10 mA
VF
0.9
V
1
JinYu
semiconductor
www.htsemi.com
Date:2011/05
MM1Z2V2B~MM1Z39B
O
Characteristics at Ta = 25 C
Zener Voltage Range 1)
Dynamic Impedance 2)
Reverse Leakage Current
Marking
Type
lZT for
VZT
ZZT (Max.)
at IZT
IR (Max.)
at VR
Vznom
Code
V
mA
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
V
Ω
mA
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
μA
120
120
120
50
20
10
5
V
0.7
1
MM1Z2V2B
MM1Z2V4B
MM1Z2V7B
MM1Z3V0B
MM1Z3V3B
MM1Z3V6B
MM1Z3V9B
MM1Z4V3B
MM1Z4V7B
MM1Z5V1B
MM1Z5V6B
MM1Z6V2B
MM1Z6V8B
MM1Z7V5B
MM1Z8V2B
MM1Z9V1B
MM1Z10B
MM1Z11B
MM1Z12B
MM1Z13B
MM1Z15B
MM1Z16B
MM1Z18B
MM1Z20B
MM1Z22B
MM1Z24B
MM1Z27B
MM1Z30B
MM1Z33B
MM1Z36B
MM1Z39B
9B
9C
9D
9E
9F
9H
9J
2.2
2.4
2.7
3.0
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.2
6.8
7.5
8.2
9.1
10
2.1...2.4
100
100
110
120
120
100
100
100
100
80
2.3…2.65
2.65…2.95
2.95…3.25
3.25…3.55
3.6…3.845
3.89…4.16
4.17…4.43
4.55…4.75
4.98…5.2
1
1
1
1
1
9K
9M
9N
9P
9R
9X
9Y
9Z
0A
0B
0C
0D
0E
0F
0H
0J
5
1
2
1
2
1.5
2.5
3
5.49…5.73
6.06…6.33
6.65…6.93
7.28…7.6
60
1
60
1
40
0.5
0.5
0.5
0.5
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
2
3.5
4
30
8.02…8.36
8.85…9.23
9.77…10.21
10.76…11.22
11.74…12.24
12.91…13.49
14.34…14.98
15.85…16.51
17.56…18.35
19.52…20.39
21.54…22.47
23.72…24.78
26.19…27.53
29.19…30.69
32.15…33.79
35.07…36.87
37…41
30
5
30
6
30
7
11
30
8
12
30
9
13
37
10
11
12
13
15
17
19
21
23
25
27
30
15
42
16
50
18
65
0K
0M
0N
0P
0R
0X
0Y
0Z
20
85
22
100
120
150
200
250
300
100
24
27
30
33
36
39
1) VZ is tested with pulses(20 ms).
2)
Z
is measured at IZ by given a very small A.C. current signal.
ZT
2
JinYu
semiconductor
www.htsemi.com
Date:2011/05
MM1Z2V2B~MM1Z39B
PACKAGE OUTLINE
Plastic surface mounted package; 2 leads
SOD-123
ALL ROUND
HE
D
A
c
A
UNIT
mm
bp
D
E
HE
v
O
1.15
1.05
0.6
0.5
2.7
2.6
1.65
1.55
3.9
3.7
0.135
0.100
0.2
5
3
JinYu
semiconductor
www.htsemi.com
Date:2011/05
相关型号：
©2020 ICPDF网 联系我们和版权申明