MM1Z43 [HTSEMI]
SILICON PLANAR ZENER DIODES; 硅平面齐纳二极管
| 型号： | MM1Z43 |
| 厂家： | 
SHENZHEN JIN YU SEMICONDUCTOR CO., LTD. |
| 描述： | SILICON PLANAR ZENER DIODES |
| 文件： | 总4页 (文件大小：229K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MM1Z2V0~MM1Z75
SILICON PLANAR ZENER DIODES
PINNING
Features
DESCRIPTION
Cathode
PIN
1
• Total power dissipation: max. 500 mW
• Small plastic package suitable for
surface mounted design
Anode
2
2
• Tolerance approximately ± 5%
1
Top View
Simplified outline SOD-123 and symbol
O
Absolute Maximum Ratings (Ta = 25 C)
Parameter
Symbol
Ptot
Value
500
Unit
mW
Power Dissipation
O
C
Junction Temperature
Tj
150
O
C
Storage Temperature Range
TS
- 55 to + 150
O
Characteristics at Ta = 25 C
Parameter
Symbol
RthA
Max.
340
Unit
O
Thermal Resistance Junction to Ambient Air
C/W
Forward Voltage
at IF = 10 mA
VF
0.9
V
1
JinYu
semiconductor
www.htsemi.com
Date:2011/05
MM1Z2V0~MM1Z75
O
Characteristics at Ta = 25 C
Zener Voltage Range 1)
Dynamic Impedance 2)
Reverse Leakage Current
Marking
Code
Type
lZT for
mA
VZT
ZZT (Max.)
at IZ
mA
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
2
2
2
2
2
2
2
2
2
2
2
2
IR (Max.)
μA
120
120
120
120
50
at VR
V
Vznom
V
V
Ω
MM1Z2V0
MM1Z2V2
MM1Z2V4
MM1Z2V7
MM1Z3V0
MM1Z3V3
MM1Z3V6
MM1Z3V9
MM1Z4V3
MM1Z4V7
MM1Z5V1
MM1Z5V6
MM1Z6V2
MM1Z6V8
MM1Z7V5
MM1Z8V2
MM1Z9V1
MM1Z10
MM1Z11
MM1Z12
MM1Z13
MM1Z15
MM1Z16
MM1Z18
MM1Z20
MM1Z22
MM1Z24
MM1Z27
MM1Z30
MM1Z33
MM1Z36
MM1Z39
MM1Z43
MM1Z47
MM1Z51
MM1Z56
MM1Z62
MM1Z68
MM1Z75
4A
4B
4C
4D
4E
4F
4H
4J
2.0
2.2
2.4
2.7
3.0
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.2
6.8
7.5
8.2
9.1
10
5
5
1.8...2.15
2.08...2.33
2.28...2.56
2.5...2.9
2.8...3.2
3.1...3.5
3.4...3.8
3.7...4.1
4...4.6
100
0.5
0.7
1
100
100
110
120
130
130
130
130
130
130
80
5
5
1
5
1
5
20
1
5
10
1
5
5
1
4K
4M
4N
4P
4R
4X
4Y
4Z
5A
5B
5C
5D
5E
5F
5H
5J
5
5
1
5
4.4...5
2
1
5
4.8...5.4
5.2...6
2
1.5
2.5
3
5
1
5
5.8...6.6
6.4...7.2
7...7.9
50
1
5
30
0.5
0.5
0.5
0.5
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
2
3.5
4
5
30
5
7.7...8.7
8.5...9.6
9.4...10.6
10.4...11.6
11.4...12.7
12.4...14.1
13.8...15.6
15.3...17.1
16.8...19.1
18.8...21.2
20.8...23.3
22.8...25.6
25.1...28.9
28...32
30
5
5
30
6
5
30
7
11
5
30
8
12
5
35
9
13
5
35
10
11
12
13
15
17
19
21
23
25
27
30
33
36
39
43
47
52
57
15
5
40
16
5
40
18
5
45
5K
5M
5N
5P
5R
5X
5Y
5Z
6A
6B
6C
6D
6E
6F
6H
20
5
50
22
5
55
24
5
60
27
5
70
30
5
80
33
5
31...35
80
36
5
34...38
90
39
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
37...41
100
130
150
180
180
200
250
300
43
40...46
2
47
44...50
2
51
48...54
1
56
52...60
1
62
58...66
0.2
0.2
0.2
68
64...72
75
70...79
1) VZ is tested with pulses (20 ms).
2)
Z
is measured at IZ by given a very small A.C. current signal.
ZT
2
JinYu
semiconductor
www.htsemi.com
Date:2011/05
MM1Z2V0~MM1Z75
Breakdown characteristics
Tj = constant (pulsed)
mA
50
Tj=25oC
3V9
2V7
6V8
4V7
3V3
Iz
40
8V2
5V6
30
20
10
0
Test current Iz
5mA
V
10
0
1
2
3
4
5
6
Vz
7
8
9
Breakdown characteristics
Tj = constant (pulsed)
mA
30
20
10
10
Tj=25oC
12
Iz
15
18
22
27
Test current Iz
5mA
33
0
V
40
0
10
20
30
Vz
3
JinYu
semiconductor
www.htsemi.com
Date:2011/05
MM1Z2V0~MM1Z75
PACKAGE OUTLINE
Plastic surface mounted package; 2 leads
SOD-123
ALL ROUND
∠
HE
D
A
c
∠
A
UNIT
mm
bp
D
E
HE
v
O
1.15
1.05
0.6
0.5
2.7
2.6
1.65
1.55
3.9
3.7
0.135
0.127
0.2
5
4
JinYu
semiconductor
www.htsemi.com
Date:2011/05
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