MM1Z4716 概述
SILICON PLANAR ZENER DIODES 硅平面齐纳二极管
MM1Z4716 数据手册
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SILICON PLANAR ZENER DIODES
PINNING
DESCRIPTION
Cathode
PIN
1
Anode
2
2
1
Top View
Simplified outline SOD-123 and symbol
O
Absolute Maximum Ratings (Ta = 25 C)
Parameter
Symbol
Ptot
Value
500
Unit
mW
Total Device Dissipaton
O
C
Junction Temperature
TJ
150
O
C
Storage Temperature Range
TStg
- 55 to + 150
O
Characteristics at Ta = 25 C
Parameter
Symbol
VF
Max.
0.9
Unit
V
Forward Voltage
at IF = 10 mA
1
JinYu
semiconductor
www.htsemi.com
Date:2011/05
MM1Z4689~MM1Z4717
Zener Voltage 1)
VZT (V)
Reverse Leakage Current
Type
Marking Code
at lZT
IR
at VR
Nom.
5.1
5.6
6.2
6.8
7.5
8.2
9.1
10
Min.
4.85
5.32
5.89
6.46
7.13
7.79
8.65
9.5
Max.
5.36
5.88
6.51
7.14
7.88
8.61
9.56
10.5
11.55
12.6
13.65
15.75
16.8
18.9
21
µA
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
Max. (µA)
10
V
MM1Z4689
MM1Z4690
MM1Z4691
MM1Z4692
MM1Z4693
MM1Z4694
MM1Z4696
MM1Z4697
MM1Z4698
MM1Z4699
MM1Z4700
MM1Z4702
MM1Z4703
MM1Z4705
MM1Z4707
MM1Z4708
MM1Z4709
MM1Z4711
MM1Z4713
MM1Z4714
MM1Z4715
MM1Z4716
MM1Z4717
BX
BY
BZ
CA
CB
CC
CE
CF
CH
CJ
3
10
4
10
5
10
5.1
5.7
6.2
6.9
7.6
8.4
9.1
9.8
11.4
12.1
13.6
15.2
16.7
18.2
20.4
22.8
25
10
1
1
1
11
10.45
11.4
12.35
14.25
15.2
17.1
19
0.05
0.05
0.05
0.05
0.05
0.05
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
12
CK
CN
CP
CX
CZ
DA
DB
DD
DF
DH
DJ
13
15
16
18
20
22
20.9
22.8
25.65
28.5
31.35
34.2
37.05
40.85
23.1
25.2
28.35
31.5
34.65
37.8
40.95
45.15
24
27
30
33
36
27.3
29.6
32.6
DK
DM
39
43
1) Tested with pulses tp = 20 ms.
2
JinYu
semiconductor
www.htsemi.com
Date:2011/05
MM1Z4689~MM1Z4717
3
JinYu
semiconductor
www.htsemi.com
Date:2011/05
MM1Z4689~MM1Z4717
PACKAGE OUTLINE
Plastic surface mounted package; 2 leads
SOD-123
ALL ROUND
HE
D
A
c
A
UNIT
mm
bp
D
E
HE
v
O
1.15
1.05
0.6
0.5
2.7
2.6
1.65
1.55
3.9
3.7
0.135
0.100
0.2
5
4
JinYu
semiconductor
www.htsemi.com
Date:2011/05
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