MM1Z6B2 [HTSEMI]
SILICON PLANAR ZENER DIODES; 硅平面齐纳二极管
| 型号： | MM1Z6B2 |
| 厂家： | 
SHENZHEN JIN YU SEMICONDUCTOR CO., LTD. |
| 描述： | SILICON PLANAR ZENER DIODES |
| 文件： | 总3页 (文件大小：604K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MM1Z2B4~MM1ZB75
SILICON PLANAR ZENER DIODES
PINNING
DESCRIPTION
Cathode
PIN
1
Features
Anode
2
• Power Dissipation: 500 mW
• Zener Voltage Tolerance: ± 2%
2
1
Top View
Simplified outline SOD-123 and symbol
O
Absolute Maximum Ratings (Ta = 25 C)
Parameter
Symbol
Ptot
Value
500
Unit
mW
Power Dissipation
O
C
Junction Temperature
TJ
150
O
C
Storage Temperature Range
TStg
- 55 to + 150
O
Characteristics at Ta = 25 C
Parameter
Symbol
RthA
Max.
340
Unit
O
Thermal Resistance Junction to Ambient Air
C/W
Forward Voltage
at IF = 10 mA
VF
0.9
V
1
JinYu
semiconductor
www.htsemi.com
Date:2011/05
MM1Z2B4~MM1ZB75
O
Characteristics at Ta = 25 C
Zener Voltage Range 1)
Dynamic Impedance
Reverse Leakage Current
Marking
Type
lZT for
mA
VZT
V
ZZT (Max.)
at IZ
mA
IR (Max.)
at VR
V
Vznom
V
Code
μA
Ω
5
5
2.352…2.448
2.646…2.754
2.94…3.06
MM1Z2B4
MM1Z2B7
MM1Z3B0
MM1Z3B3
MM1Z3B6
MM1Z3B9
MM1Z4B3
MM1Z4B7
MM1Z5B1
MM1Z5B6
MM1Z6B2
MM1Z6B8
MM1Z7B5
MM1Z8B2
MM1Z9B1
MM1ZB10
MM1ZB11
MM1ZB12
MM1ZB13
MM1ZB15
MM1ZB16
MM1ZB18
MM1ZB20
MM1ZB22
MM1ZB24
MM1ZB27
MM1ZB30
MM1ZB33
MM1ZB36
MM1ZB39
MM1ZB43
MM1ZB47
MM1ZB51
MM1ZB56
MM1ZB62
MM1ZB68
MM1ZB75
5Y1
5Z1
6A1
6B1
6C1
6D1
6E1
6F1
6G1
6H1
6J1
2.4
2.7
3.0
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.2
6.8
7.5
8.2
9.1
10
100
110
120
130
130
130
130
130
130
80
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
2
2
2
2
2
2
2
2
2
2
2
2
120
120
50
20
10
5
1
1
5
1
5
3.234…3.366
3.528…3.672
3.822…3.978
4.214…4.386
4.606…4.794
4.998…5.202
5.488…5.712
6.076…6.324
6.664…6.936
7.35…7.65
1
5
1
5
1
5
5
1
5
2
1
5
2
1.5
2.5
3
5
1
5
50
1
5
6K1
6L1
6M1
6N1
6P1
6Q1
6R1
6S1
6T1
6U1
6W1
6X1
6Y1
6Z1
7A1
7B1
7C1
7D1
7E1
7F1
7G1
7H1
7J1
30
0.5
0.5
0.5
0.5
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
2
3.5
4
5
30
5
8.036…8.364
8.918…9.282
9.8…10.2
30
5
5
30
6
5
30
7
5
10.78…11.22
11.76…12.24
12.74…13.26
14.7…15.3
11
30
8
5
12
35
9
5
13
35
10
11
12
13
15
17
19
21
23
25
27
30
33
36
39
43
47
52
57
5
15
40
5
15.68…16.32
17.64…18.36
19.6…20.4
16
40
5
18
45
5
20
50
5
21.56…22.44
23.52…24.48
26.46…27.54
29.4…30.6
22
55
5
24
60
5
27
70
5
30
80
5
32.34…33.66
35.28…36.72
38.22…39.78
42.14…43.86
46.06…47.94
49.98…52.02
54.88…57.12
60.76…63.24
66.64…69.36
73.5…76.5
33
80
5
36
90
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
39
100
130
150
180
180
200
250
300
2
43
2
47
1
51
1
56
0.2
0.2
0.2
7K1
7L1
7M1
62
68
75
1) VZ is tested with pulses (20 ms).
2
JinYu
semiconductor
www.htsemi.com
Date:2011/05
MM1Z2B4~MM1ZB75
PACKAGE OUTLINE
Plastic surface mounted package; 2 leads
SOD-123
ALL ROUND
∠
HE
D
A
c
∠
A
UNIT
mm
bp
D
E
HE
v
O
1.15
1.05
0.6
0.5
2.7
2.6
1.65
1.55
3.9
3.7
0.135
0.100
0.2
5
3
JinYu
semiconductor
www.htsemi.com
Date:2011/05
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