MMBTA05 [HTSEMI]
TRANSISTOR(NPN); 晶体管（ NPN ）
| 型号： | MMBTA05 |
| 厂家： | 
SHENZHEN JIN YU SEMICONDUCTOR CO., LTD. |
| 描述： | TRANSISTOR(NPN) |
| 文件： | 总2页 (文件大小：993K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MMBTA05
TRANSISTOR(NPN)
SOT-23
FEATURES
Driver transistor
1. BASE
2. EMITTER
3. COLLECTOR
MARKING :1H
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Collector-Base Voltage
Value
60
Units
V
Collector-Emitter Voltage
Emitter-Base Voltage
60
V
4
V
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
0.5
A
PC
300
150
-55-150
mW
TJ
℃
Tstg
Storage Temperature
℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
Test
conditions
MIN
60
60
4
TYP
MAX
UNIT
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
V
V
IC= 100μA, IE=0
IC= 1mA, IB=0
V
IE=100μA, IC=0
VCB=60V, IE=0
0.1
0.1
0.1
400
μA
μA
μA
Collector cut-off current
ICEO
VCE=60V, IB=0
Collector cut-off current
IEBO
VEB=3V, IC=0
hFE1
VCE=1V, IC= 10mA
VCE=1V, IC= 100mA
IC=100mA, IB=10mA
VCE=1V, IC= 100mA
100
100
DC current gain
hFE2
Collector-emitter saturation voltage
Base-emitter voltage
VCE(sat)
VBE
0.25
1.2
V
V
V
CE= 2V, IC=10mA
Transition frequency
fT
100
MHz
f=100MHz
1
JinYu
semiconductor
www.htsemi.com
Date:2011/05
MMBTA05
2
JinYu
semiconductor
www.htsemi.com
Date:2011/05
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