MMST3904 [HTSEMI]
TRANSISTOR(NPN); 晶体管( NPN )型号: | MMST3904 |
厂家: | SHENZHEN JIN YU SEMICONDUCTOR CO., LTD. |
描述: | TRANSISTOR(NPN) |
文件: | 总1页 (文件大小:329K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
MMST3904
TRANSISTOR(NPN)
SOT–323
FEATURES
Complementary to MMST3906
MARKING:K2N
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Value
Unit
V
1. BASE
Collector-Base Voltage
60
2. EMITTER
Collector-Emitter Voltage
Emitter-Base Voltage
40
V
3. COLLECTOR
5
V
Collector Current
200
mA
mW
℃/W
℃
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
200
PC
625
RΘJA
Tj
150
Storage Temperature
Tstg
-55~+150
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
Min
60
40
5
Typ
Max
Unit
V
V(BR)CBO
V(BR)CEO
V(BR)EBO
*
IC=10µA, IE=0
IC=1mA, IB=0
IE=10µA, IC=0
VCB=60V, IE=0
VCE=40V, IB=0
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
*
*
V
V
ICBO
*
*
60
nA
nA
ICEO
500
Collector cut-off current
VCE=1V, IC=100µA
VCE=1V, IC=1mA
40
70
hFE*
DC current gain
VCE=1V, IC=10mA
100
60
300
VCE=1V, IC=50mA
IC=10mA, IB=1mA
0.25
0.3
V
V
VCE(sat)
*
Collector-emitter saturation voltage
Base-emitter saturation voltage
IC=50mA, IB=5mA
IC=10mA, IB=1mA
0.85
0.95
V
VBE(sat)
*
IC=50mA, IB=5mA
V
fT
Cob
Cib
td
VCE=20V,IC=10mA , f=100MHz
VCB=5V, IE=0, f=1MHz
VEB=0.5V, IE=0, f=1MHz
VCC=3V, VBE(off)=0.5V IC=10mA,
IB1=1mA
300
MHz
pF
pF
ns
ns
ns
ns
Transition frequency
Collector output capacitance
Collector output capacitance
Delay time
4
8
35
35
225
75
tr
Rise time
ts
Storage time
VCC=3V, IC=10mA, IB1= IB2=1mA
tf
Fall time
*Pulse test: pulse width ≤300μs,duty cycle≤ 2.0%.
1
JinYu
semiconductor
www.htsemi.com
Date:2011/05
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