MMST3904 [HTSEMI]

TRANSISTOR(NPN); 晶体管( NPN )
MMST3904
型号: MMST3904
厂家: SHENZHEN JIN YU SEMICONDUCTOR CO., LTD.    SHENZHEN JIN YU SEMICONDUCTOR CO., LTD.
描述:

TRANSISTOR(NPN)
晶体管( NPN )

晶体 晶体管 光电二极管
文件: 总1页 (文件大小:329K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
MMST3904  
TRANSISTOR(NPN)  
SOT323  
FEATURES  
Complementary to MMST3906  
MARKING:K2N  
MAXIMUM RATINGS (Ta=25unless otherwise noted)  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Parameter  
Value  
Unit  
V
1. BASE  
Collector-Base Voltage  
60  
2. EMITTER  
Collector-Emitter Voltage  
Emitter-Base Voltage  
40  
V
3. COLLECTOR  
5
V
Collector Current  
200  
mA  
mW  
/W  
Collector Power Dissipation  
Thermal Resistance From Junction To Ambient  
Junction Temperature  
200  
PC  
625  
RΘJA  
Tj  
150  
Storage Temperature  
Tstg  
-55+150  
ELECTRICAL CHARACTERISTICS (Ta=25unless otherwise specified)  
Parameter  
Symbol  
Test  
conditions  
Min  
60  
40  
5
Typ  
Max  
Unit  
V
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
*
IC=10µA, IE=0  
IC=1mA, IB=0  
IE=10µA, IC=0  
VCB=60V, IE=0  
VCE=40V, IB=0  
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cut-off current  
*
*
V
V
ICBO  
*
*
60  
nA  
nA  
ICEO  
500  
Collector cut-off current  
VCE=1V, IC=100µA  
VCE=1V, IC=1mA  
40  
70  
hFE*  
DC current gain  
VCE=1V, IC=10mA  
100  
60  
300  
VCE=1V, IC=50mA  
IC=10mA, IB=1mA  
0.25  
0.3  
V
V
VCE(sat)  
*
Collector-emitter saturation voltage  
Base-emitter saturation voltage  
IC=50mA, IB=5mA  
IC=10mA, IB=1mA  
0.85  
0.95  
V
VBE(sat)  
*
IC=50mA, IB=5mA  
V
fT  
Cob  
Cib  
td  
VCE=20V,IC=10mA , f=100MHz  
VCB=5V, IE=0, f=1MHz  
VEB=0.5V, IE=0, f=1MHz  
VCC=3V, VBE(off)=0.5V IC=10mA,  
IB1=1mA  
300  
MHz  
pF  
pF  
ns  
ns  
ns  
ns  
Transition frequency  
Collector output capacitance  
Collector output capacitance  
Delay time  
4
8
35  
35  
225  
75  
tr  
Rise time  
ts  
Storage time  
VCC=3V, IC=10mA, IB1= IB2=1mA  
tf  
Fall time  
*Pulse test: pulse width ≤300μs,duty cycle≤ 2.0%.  
1
JinYu  
semiconductor  
www.htsemi.com  
Date:2011/05  

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