S8550 [HTSEMI]
TRANSISTOR(PNP); 晶体管（ PNP ）
| 型号： | S8550 |
| 厂家： | 
SHENZHEN JIN YU SEMICONDUCTOR CO., LTD. |
| 描述： | TRANSISTOR(PNP) |
| 文件： | 总2页 (文件大小：884K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SS89505102
SOT-23
TRANSISTOR(PNP)
FEATURES
z
Complimentary to S8050
Collector current: IC=0.5A
1. BASE
z
2. EMITTER
3. COLLECTOR
MARKING : 2TY
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Symbol
VCBO
Parameter
Value
-40
Units
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
VCEO
VEBO
IC
-25
V
-5
V
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
-0.5
0.3
A
PC
W
℃
℃
Tj
150
Tstg
Storage Temperature
-55-150
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
Test conditions
IC = -100μA, IE=0
IC =-1mA, IB=0
MIN
-40
-25
-5
MAX UNIT
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
V
V
V
IE= -100μA, IC=0
VCB= -40V, IE=0
-0.1
-0.1
-0.1
400
μA
μA
μA
Collector cut-off current
ICEO
VCE= -20V, IB=0
Emitter cut-off current
IEBO
VEB= -3V, IC=0
hFE(1)
VCE= -1V, IC= -50mA
VCE= -1V, IC= -500mA
IC=-500mA, IB= -50mA
IC=-500mA, IB= -50mA
120
50
DC current gain
hFE(2)
Collector-emitter saturation voltage
Base-emitter saturation voltage
VCE(sat)
VBE(sat)
-0.6
-1.2
V
V
VCE= -6V, IC= -20mA
f=30MHz
Transition frequency
150
MHz
fT
CLASSIFICATION OF hFE(1)
Rank
L
H
120-200
200-350
Range
1
JinYu
semiconductor
www.htsemi.com
Date:2011/05
SS98051520
2
JinYu
semiconductor
www.htsemi.com
Date:2011/05
相关型号：
S8550-AP
Small Signal Bipolar Transistor, 0.5A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, ROHS COMPLIANT, PLASTIC PACKAGE-3
MCC
S8550-B-BP
Small Signal Bipolar Transistor, 0.5A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, ROHS COMPLIANT, PLASTIC PACKAGE-3
MCC
©2020 ICPDF网 联系我们和版权申明