SI2312 [HTSEMI]
20 V N-Channel Enhancement Mode MOSFET; 20 V的N沟道增强型MOSFET
| 型号： | SI2312 |
| 厂家： | 
SHENZHEN JIN YU SEMICONDUCTOR CO., LTD. |
| 描述： | 20 V N-Channel Enhancement Mode MOSFET |
| 文件： | 总3页 (文件大小：1878K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SI2312
20V N-Channel Enhancement Mode MOSFET
VDS= 20V
RDS(ON), Vgs@4.5V, Ids@5.0A < 31mΩ
RDS(ON), Vgs@2.5V, Ids@4.5A < 37mΩ
RDS(ON), Vgs@1.8V, Ids@3.9A < 85mΩ
Features
Advanced trench process technology
High Density Cell Design For Ultra Low On-Resistance
Package Dimensions
D
SOT-23-3L
G
S
Millimeter
Millimeter
REF.
REF.
Min.
Max.
3.10
2.95
1.70
0.50
0.10
Min.
Max.
A
B
C
D
E
2.70
2.65
1.50
0.35
0
G
H
K
J
1.90 REF.
1.00
0.10
0.40
0.85
1.30
0.20
-
L
1.15
F
0.45
0.55
M
0°
10°
Maximum Ratings and Thermal Characteristics (TA = 25oC unless otherwise noted)
Parameter
Symbol
VDS
VGS
ID
Limit
20
Unit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
V
+ 8
4.9
A
IDM
15
TA = 25oC
TA = 75oC
0.75
0.48
-55 to 150
140
Maximum Power Dissipation
PD
W
oC
oC/W
TJ, Tstg
RqJA
Operating Junction and Storage Temperature Range
Junction-to-Ambient Thermal Resistance (PCB mounted)
1
JinYu
semiconductor
www.htsemi.com
Date:2011/05
SI2312
20V N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS
Symbol
Parameter
Test Condition
Min.
Typ.
Miax.
Unit
V
Static
Drain-Source Breakdown Voltage
Drain-Source On-State Resistance
Drain-Source On-State Resistance
Drain-Source On-State Resistance
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage
BVDSS
RDS(on)
RDS(on)
RDS(on)
VGS(th)
IDSS
VGS = 0V, ID = 250uA
VGS = 4.5V, ID = 5.0A
VGS = 2.5V, ID = 4.5A
VGS = 1.8V, ID = 4.0A
VDS =VGS, ID = 250uA
VDS = 20V, VGS = 0V
VGS = ± 8V, VDS = 0V
VDS = 15V, ID = 5.0A
20
21.0
24.0
50.0
31.0
37.0
85.0
1
mW
0.4
V
uA
nA
S
1
IGSS
± 100
Forward Transconductance
Dynamic
gfs
40
Total Gate Charge
Qg
Qgs
Qgd
td(on)
tr
11.2
1.4
2.2
15
14
VDS = 10V, ID = 5.0A
VGS = 4.5V
Gate-Source Charge
Gate-Drain Charge
nC
ns
Turn-On Delay Time
25
60
70
45
VDD = 10V, RL=10Ω
ID = 1A, VGEN = 4.5V
RG = 6W
Turn-On Rise Time
40
Turn-Off Delay Time
td(off)
tf
48
Turn-Off Fall Time
31
Input Capacitance
Ciss
Coss
Crss
500
300
140
VDS = 8V, VGS = 0V
f = 1.0 MHz
Output Capacitance
pF
Reverse Transfer Capacitance
Source-Drain Diode
Max. Diode Forward Current
Diode Forward Voltage
IS
1.7
1.2
A
V
VSD
IS = 1.8A, VGS = 0V
Note: Pulse test: pulse width <= 300us, duty cycle<= 2%
2
JinYu
semiconductor
www.htsemi.com
Date:2011/05
SI2312
20V N-Channel Enhancement Mode MOSFET
3
JinYu
semiconductor
www.htsemi.com
Date:2011/05
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