STZ8056B [HTSEMI]
Silicon Planar Zener Diodes; 硅平面齐纳二极管
| 型号： | STZ8056B |
| 厂家： | 
SHENZHEN JIN YU SEMICONDUCTOR CO., LTD. |
| 描述： | Silicon Planar Zener Diodes |
| 文件： | 总5页 (文件大小：583K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STZ8000 Series
Silicon Planar Zener Diodes
For stabilization of power supply application
PINNING
DESCRIPTION
Cathode
PIN
1
Anode
2
2
1
Top View
Simplified outline SOD-323 and symbol
O
Absolute Maximum Ratings (Ta = 25 C)
Parameter
Symbol
Ptot
Value
300
Unit
mW
mA
Power Dissipation
Repetitive Peak Forward Current
Junction Temperature
IFRM
Tj
200
O
C
150
O
C
Storage Temperature Range
Tstg
- 55 to + 150
O
Characteristics at Ta = 25 C
Parameter
Symbol
RthA
Value
417
Unit
O
C/W
Thermal Resistance Junction to Ambient Air
Forward Voltage
at IF = 10 mA
VF
1
V
1
JinYu
semiconductor
www.htsemi.com
Date:2011/05
STZ8000 Series
Temp. coefficient of
Zener Voltage
Reverse Leakage
Current
Zener Voltage Range 1)
Dynamic Impedance
Marking
Code
Type
lZT for
mA
VZ
V
ZZT
ZZK
at IZK
IR
at VR
SZ (mV/OC)
Typ. at IZT
Ω (Max.)
100
Ω (Max.)
mA
-
μA (Max.)
120
V
1
STZ8024
1C
1D
5
2.28…2.6
2.5…2.9
-
-1.6
STZ8027
STZ8027A
STZ8027B
STZ8030
1C1
7D
5
2.5…2.75
2.65…2.9
2.8…3.2
110
120
130
130
130
-
-
-
-
-
-
-
-
-
-
120
50
20
10
10
1
1
1
1
1
-2
1E
STZ8030A
STZ8030B
STZ8033
1F1
7E
5
5
5
5
2.8…3.05
2.95…3.2
3.1…3.5
-2.1
-2.4
-2.4
-2.5
1F
STZ8033A
STZ8033B
STZ8036
1J1
7F
3.1…3.35
3.25…3.5
3.4…3.8
1H
STZ8036A
STZ8036B
STZ8039
1M1
7H
3.4…3.65
3.55…3.8
3.7…4.1
1J
STZ8039A
STZ8039B
STZ8043
1Q1
7J
3.7…3.97
3.87…4.1
4…4.6
1K
STZ8043A
STZ8043B
STZ8043C
STZ8047
1T1
7K
4.03…4.26
4.17…4.4
4.31…4.54
4.4…5
5
5
5
5
5
5
5
130
80
60
40
30
20
20
-
-
10
2
1
1
-2.5
-1.4
-0.8
1.2
2.3
3
1W1
1M
1Y1
EB
STZ8047A
STZ8047B
STZ8047C
STZ8051
4.45…4.69
4.59…4.83
4.74…4.99
4.8…5.4
800
500
200
100
60
1
2A1
1N
STZ8051A
STZ8051B
STZ8051C
STZ8056
2C1
EC
2E1
1P
4.87…5.12
5…5.26
1
2
1.5
2.5
3
5.14…5.4
5.3…6
STZ8056A
STZ8056B
STZ8056C
STZ8062
2G1
ED
2J1
1R
5.3…5.58
5.48…5.76
5.66…5.95
5.8…6.6
0.5
0.5
0.5
0.5
1
STZ8062A
STZ8062B
STZ8062C
STZ8068
2L1
7R
5.85…6.15
6.05…6.36
6.24…6.56
6.4…7.2
1
2N1
1X
STZ8068A
STZ8068B
STZ8068C
STZ8075
2Q1
7X
6.44…6.77
6.64…6.98
6.85…7.2
7…7.9
0.5
0.5
3.5
4
2S1
1Y
STZ8075A
STZ8075B
STZ8075C
2U1
7Y
7.07…7.43
7.29…7.67
7.51…7.89
60
4
2X1
2
JinYu
semiconductor
www.htsemi.com
Date:2011/05
STZ8000 Series
Temp. coefficient of
Zener Voltage
Reverse Leakage
Current
Zener Voltage Range 1)
Dynamic Impedance
Marking
Code
Type
lZT for
mA
VZ
V
ZZT
ZZK
at IZK
IR
at VR
SZ (mV/OC)
Typ. at IZT
Ω (Max.)
Ω (Max.)
mA
μA (Max.)
V
STZ8082
1Z
2Z1
EJ
7.7…8.7
7.77…8.17
8.03…8.43
8.29…8.7
STZ8082A
STZ8082B
STZ8082C
STZ8091
5
5
5
5
5
20
20
30
30
30
60
60
60
60
80
0.5
0.5
0.5
0.1
0.1
0.1
5
6
7
8
9
4.6
5.5
6.4
7.4
8.4
3B1
2A
8.5…9.6
STZ8091A
STZ8091B
STZ8091C
STZ8100
3D1
EK
8.58…9.02
8.87…9.33
9.14…9.6
0.5
0.5
0.5
0.5
3F1
2B
9.4…10.6
STZ8100A
STZ8100B
STZ8100C
STZ8110
3H1
8B
9.44…9.92
9.75…10.25
10.07…10.59
10.4…11.6
10.4…10.94
10.73…11.28
11.05…11.6
11.4…12.7
11.4…11.96
11.73…12.33
12.06…12.68
12.4…14.1
12.4…12.99
12.73…13.4
13.25…14.08
13.65…14.35
13.9…15.6
13.9…14.76
14.6…15.35
14.95…15.6
15.3…17.1
15.3…16.09
15.7…16.5
16.26…17.1
16.9…19.1
16.9…17.76
17.55…18.45
18.2…19.1
18.8…21.2
18.85…19.81
19.5…20.5
20.15…21.19
20.8…23.3
20.8…21.86
21.45…22.55
22.1…23.24
3K1
2C
STZ8110A
STZ8110B
STZ8110C
STZ8120
3M1
EN
3P1
2D
STZ8120A
STZ8120B
STZ8120C
STZ8130
3R1
8D
3T1
2E
STZ8130A
STZ8130B
STZ8130C
STZ8140
3W1
ER
5
5
5
35
40
40
80
80
80
0.5
0.5
0.5
0.1
0.1
0.1
10
10
11
9.4
10
3Y1
3Z1
2F
STZ8150
STZ8150A
STZ8150B
STZ8150C
STZ8160
4B1
EX
11.4
4D1
2H
STZ8160A
STZ8160B
STZ8160C
STZ8180
4F1
8H
5
5
5
5
50
60
80
80
80
80
0.5
0.5
0.5
0.5
0.1
0.1
0.1
0.1
12
13
15
17
12.4
14.4
16.4
18.4
4H1
2J
STZ8180A
STZ8180B
STZ8180C
STZ8200
4K1
8J
4M1
2K
STZ8200A
STZ8200B
STZ8200C
STZ8220
4P1
8K
100
100
4R1
2M
STZ8220A
STZ8220B
STZ8220C
4T1
8M
4W1
3
JinYu
semiconductor
www.htsemi.com
Date:2011/05
STZ8000 Series
Temp. coefficient of
Zener Voltage
Reverse Leakage
Current
Zener Voltage Range 1)
Dynamic Impedance
Marking
Code
Type
lZT for
mA
VZ
V
ZZT
ZZK
at IZK
IR
at VR
SZ (mV/OC)
Typ. at IZT
Ω (Max.)
Ω (Max.)
mA
μA (Max.)
V
STZ8240
2N
4Y1
FC
22.8…25.6
22.8…23.97
23.5…24.7
24.35…25.6
25.1…28.9
25.3…26.7
26.3…27.7
27.3…28.7
28…32
STZ8240A
STZ8240B
STZ8240C
STZ8270
5
2
2
2
2
2
100
120
160
200
250
300
120
120
160
200
250
300
0.5
0.1
0.1
0.1
0.1
0.1
2
19
21
23
25
27
30
20.4
23.4
26.6
29.7
33
5A1
2P
STZ8270A
STZ8270B
STZ8270C
STZ8300
5C1
FD
0.5
0.5
0.5
0.5
0.5
5E1
2R
STZ8300A
STZ8300B
STZ8300C
STZ8330
5G1
FE
28.3…29.7
29.3…30.8
30.2…31.8
31…35
5J1
2X
STZ8330A
STZ8330B
STZ8330C
STZ8360
5L1
8X
31.2…32.8
32.2…33.8
33.2…34.9
34…38
5N1
2Y
STZ8360A
STZ8360B
STZ8360C
STZ8390
5Q1
8Y
34.1…35.9
35.1…36.9
36.1…37.9
37…41
5S1
2Z
STZ8390A
STZ8390B
STZ8390C
5U1
FJ
37.1…39
35.6
38…40
5X1
39…41
1) VZ is tested with pulses (20 ms).
300
200
100
0
25
0
100
150
O
Ambient Temperature: Ta ( C)
Derating Curve
4
JinYu
semiconductor
www.htsemi.com
Date:2011/05
STZ8000 Series
PACKAGE OUTLINE
Plastic surface mounted package; 2 leads
SOD-323
A
c
HE
D
A
E
bp
UNIT
mm
A
bp
C
D
E
HE
1.10
0.80
0.40
0.25
1.35
1.15
2.80
2.30
0.15
0.10
1.80
1.60
5
JinYu
semiconductor
www.htsemi.com
Date:2011/05
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