H1144 [HUASHAN]
PNP SILICON TRANSISTOR; PNP硅晶体管型号: | H1144 |
厂家: | SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD |
描述: | PNP SILICON TRANSISTOR |
文件: | 总1页 (文件大小:113K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
PN P S I LI C O N T RAN S I S TO R
Shantou Huashan Electronic Devices Co.,Ltd.
H1144
█ APPLICATIONS
Medium frequency power amplifier,Medium Seed switching.
█ ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
TO-126ML
Tstg——Storage Temperature………………………… -55~150℃
Tj——Junction Temperature……………………………… 150℃
PC——Collector Dissipation(Tc=25℃)…………………… 10W
PC——Collector Dissipation(TA=25℃)…………………… 1.5W
VCBO——Collector-Base Voltage………………………… -120V
VCEO——Collector-Emitter Voltage……………………… -100V
VEBO——Emitter-Base Voltage……………………………… -6V
IC——Collector Current……………………………………-1.5A
1―Emitter,E
2―Collector,C
3―Base,B
█ ELECTRICAL CHARACTERISTICS(Ta=25℃)
Symbol
Characteristics
Min
Typ
Max
Unit
Test Conditions
BVCBO Collector-Base Breakdown Voltage
BVCEO Collector-Emitter Breakdown Voltage -100
BVEBO Emitter-Base Breakdown Voltage
-120
V
V
V
IC=-10μA, IE=0
IC=-1mA, IB=0
IE=-10μA,IC=0
-6
Collector Cut-off Current
ICBO
IEBO
-100 nA VCB=-100V, IE=0
-100 nA VEB=-4V, IC=0
Emitter Cut-off Current
HFE(1) DC Current Gain
HFE(2) DC Current Gain
100
30
400
VCE=-5V, IC=-100mA
VCE=-5V, IC=-1A
VCE(sat) Collector- Emitter Saturation Voltage
VBE(sat) Base-Emitter Saturation Voltage
0.18 0.5
V
IC=-500mA, IB=-50mA
IC=-500mA, IB=-50mA
0.85 1.2
V
tON
tSTG
tF
Turn-On Time
Storage Time
Fall Time
80
750
40
nS
nS
nS
See specified test circuit
Current Gain-Bandwidth Product
ft
Cob
100
18
MHz VCE=-10V, IC=-50mA,
pF VCB=-10V, IE=0,f=1MHz
Output Capacitance
█ hFE Classification
R
S
T
100—200
140—280
200—400
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