HC143E [HUASHAN]
NPN SILICON TRANSISTOR; NPN硅晶体管
| 型号： | HC143E |
| 厂家： | 
SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD |
| 描述： | NPN SILICON TRANSISTOR |
| 文件： | 总2页 (文件大小：514K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NPN DIGITAL T R A N S I S T O R
Shantou Huashan Electronic Devices Co.,Ltd.
HC143E
█ APPLICATIONS
Switching Circuit，Interface Circuit.
█ ABSOLUTE MAXIMUM RATINGS（Ta=25℃）
Tstg— — Storage Temperature⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ -55~150℃
Tj— — Junction Temperature⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ 150℃
PC— — Collector Dissipation⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ 300mW
VCBO— — Collector-Base Voltage⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ 50V
VCEO— — Collector-Emitter Voltage⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ 50V
VEBO — — Emitter-Base Voltage⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ 10V
IC— — Collector Current⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ 100mA
TO-92S
1―Emitter，E
2―Collector,C
3―Base，B
█ ELECTRICAL CHARACTERISTICS（Ta=25℃）
Symbol
Characteristics
Min
Typ
Max
Unit
Test Conditions
BVCBO Collector-Base Breakdown Voltage
BVCEO Collector-Emitter Breakdown Voltage
50
50
V
V
IC=10μA, IE=0
IC=0.1mA, IB=0
VCB=40V, IE=0
ICBO
ICEO
IEBO
HFE
Collector Cut-off Current
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
0.1 μA
0.5 μA
VCE=40V, IB=0
VEB=5V, IC=0
410 532 760 μA
50
VCE=5V, IC=10mA
IC=10mA, IB=0.5mA
VCE=5V, IC=0.1mA
VCE=0.3V, IC=20mA
VCE(sat) Collector- Emitter Saturation Voltage
0.1 0.3 V
Input Off Voltage
Input On Voltage
Input Resistor
VI（off）
VI（on）
R1
0.8 1.1 1.5 V
1.0 1.9 4.0 V
3.3 4.7 6.1 Kohm
0.9 1.0 1.1
R2/R1 Resistance Ratio
fT
Current Gain-Bandwidth Product
Output Capacitance
VCE=10V,IC=5mA
250
3.7
MHz
pF
Cob
VCB=10V,f=1MHz
NPN DIGITAL T R A N S I S T O R
Shantou Huashan Electronic Devices Co.,Ltd.
HC143E
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