HCP10C60 [HUASHAN]
Silicon Controlled Rectifier; 可控硅整流器
| 型号： | HCP10C60 |
| 厂家： | 
SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD |
| 描述： | Silicon Controlled Rectifier |
| 文件： | 总3页 (文件大小：721K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Shantou Huashan Electronic Devices Co.,Ltd.
HCP10C60
Silicon Controlled Rectifier
█ Features
* Repetitive Peak Off-State Voltage : 600V
* R.M.S On-State Current(IT(RMS)=10A)
* Low On-State Voltage (1.4V(Typ.)@ ITM
)
* Non-isolated Type
█ General Description
Standard gate triggering SCR is suitable for the application where
requiring high bi-directional blocking voltage capability and also
suitable for over voltage protection,motor control cicuit in power
tool,inrush current limit circuit and heating control system.
█ Absolute Maximum Ratings（Ta=25℃ unless otherwise specified）
Ts t g — — Storage Temperature ------------------------------------------------------ -40~125℃
Tj — — Operating Junction Temperature ---------------------------------------------- -40~125℃
VDRM — — Repetitive Peak Off-State Voltage -------------------------------------------------------------------- 600V
IT（RMS）— — R.M.S On-State Current（180º Conduction Angles）---------------------------------------- 10A
IT(AV) — — Average On-State Current (Half Sine Wave : TC = 111 °C ) ----------------------------------------6.4A
ITSM — — Surge On-State Current (1/2 Cycle, 60Hz, Sine Wave, Non-repetitive) -------------------------- 110A
I2t — — Circuit Fusing Considerations(t = 8.3ms) ------------------------------------------------------------ 60A2s
PGM — — Forward Peak Gate Power Dissipation (Ta=25℃) --------------------------------------------------- 5W
PG(AV) — — Forward Average Gate Power Dissipation (Ta=25℃,t=8.3ms) ---------------------------------0.5W
IFGM — — Forward Peak Gate Current -------------------------------------------------------------------------------- 2A
VRGM — — Reverse Peak Gate Voltage ------------------------------------------------------------------------------- 5V
Shantou Huashan Electronic Devices Co.,Ltd.
HCP10C60
█ Electrical Characteristics（Ta=25℃ unless otherwise specified）
Symbol
Items
Min.
Typ.
Max.
Unit
Conditions
IDRM
Repetitive Peak Off-State
Current
VAK=VDRM
Ta=25℃
Ta=125℃
10
200
1.6
uA
V
VTM
IGT
Peak On-State Voltage (1)
Gate Trigger Current（2）
Gate Trigger Voltage (2)
Non-Trigger Gate Voltage
ITM=20A,tp=380µs
15
mA VAK =6V(DC), RL=10 ohm
VG T
VGD
1.5
V
VAK =6V(DC), RL=10 ohm
Ta=25℃
VAK =12V, RL=100 ohm
Ta=125℃
0.2
V
IH
Holding Current
20
IT=100mA,Gate open,
Ta=25℃
mA
Thermal Resistance
Thermal Resistance
Junction to Case
Rth(j-c)
Rth(j-a)
dv/dt
1.3 ℃/W
Junction to Ambient
60
℃/W
Critical Rate of Rise Off-state
Voltage
Linear slope up to VD=VDRM67%
200
V/µs
Gate open
Tj=125℃
1. Forward current applied for 1 ms maximum duration,duty cycle ≤ 1%.
2. RGK current is not included in measurement
█ Performance Curves
FIGURE 1 – Gate Characteristics
FIGURE 2 – Maximum CaseTemperture
Gate Current (mA)
Average On-State Current (mA)
Shantou Huashan Electronic Devices Co.,Ltd.
HCP10C60
FIGURE 3-Typical Forward Voltage(V)
FIGURE 4-Thermal Response
On-State Voltage (V)
Time (sec)
FIGURE 5-Typical Gate Trigger Voltage VS
Junction Temperature
FIGURE 6-Typical Gate Trigger Current VS
Junction Temperature
Junction Temperature (°C)
Junction Temperature (°C)
FIGURE 8-Power Dissipation
FIGURE 7-Typical Holding Current
Junction Temperature (°C)
Average On-State Current (A)
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