HP127 [HUASHAN]
PNP SILICON TRANSISTOR; PNP硅晶体管
| 型号： | HP127 |
| 厂家： | 
SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD |
| 描述： | PNP SILICON TRANSISTOR |
| 文件： | 总2页 (文件大小：133K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PNP S I LI C O N TRAN S I S T O R
Shantou Huashan Electronic Devices Co.,Ltd.
HP127
█ APPLICATIONS
PNP Epitaxial Darlington Transistor. High DC Current Gain.
Monolithic Construction with Built-In Base-Emitter Shunt Resistors.
█ ABSOLUTE MAXIMUM RATINGS（Ta=25℃）
TO-220
Tstg——Storage Temperature………………………… -55~150℃
Tj——Junction Temperature…………………………………150℃
PC——Collector Dissipation（Tc=25℃）……………………………65W
PC——Collector Dissipation（Ta=25℃）……………………………2W
VCBO——Collector-Base Voltage………………………………-100V
VCEO——Collector-Emitter Voltage……………………………-100V
VEBO——Emitter-Base Voltage………………………………-5V
IC——Collector Curren（t DC）………………………………………-5A
IC——Collector Current（Pulse）……………………………………-8A
Ib——Base Current……………………………………………-120mA
1―Base，B
2―Collector，C
3―Emitter，E
█ ELECTRICAL CHARACTERISTICS（Ta=25℃）
Symbol
Characteristics
Min Typ Max Unit
Test Conditions
BVCBO Collector-Base Breakdown Voltage
BVCEO
HFE
VCE(sat1) *Collector- Emitter Saturation Voltage
VCE(sat2) *Collector- Emitter Saturation Voltage
VBE(ON) *Base-Emitter On Voltage
-100
Collector-Emitter Breakdown Voltage -100
*DC Current Gain
1000
V
V
IC=-1mA, IE=0
IC=-5mA, IB=0
VCE=-3V, IC=-0.5A
IC=-3A, IB=-12mA
IC=-3A, IB=-20mA
VCE=-3V, IC=-3A
-2.0 V
-4.0 V
-2.5 V
ICEO
ICBO
IEBO
Cob
Collector Cut-off Current
Collector Cut-off Current
Emitter Cut-off Current
Output Capacitance
-0.5 mA VCB=-50V, IB=0
-0.2 mA VCB=-100V, IE=0
-2.0 mA VEB=-5V, IC=0
300 pF VCB=-10V, IE=0，f=0.1MHz
*Pulse Test：PW≤300μs，Duty cycle≤2%
PNP S I LI C O N TRAN S I S T O R
Shantou Huashan Electronic Devices Co.,Ltd.
HP127
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