HP50 [HUASHAN]
NPN SILICON TRANSISTOR; NPN硅晶体管
| 型号： | HP50 |
| 厂家： | 
SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD |
| 描述： | NPN SILICON TRANSISTOR |
| 文件： | 总3页 (文件大小：838K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NPN S I L I C O N TRANSISTOR
Shantou Huashan Electronic Devices Co.,Ltd.
HP50
█ APPLICATIONS
High Voltage And switching.
█ ABSOLUTE MAXIMUM RATINGS（Ta=25℃）
TO-220
Tstg— — Storage Temperature⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ -65~150℃
Tj— — Junction Temperature⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ 150℃
PC— — Collector Dissipation（Tc=25℃）⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ 40W
VCBO — — Collector-Base Voltage⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ 500V
VCEO— — Collector-Emitter Voltage⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ 400V
VEBO— — Emitter-Base Voltage⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ 5V
IC— — Collector Curren（t DC）⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ 1A
IC— — Collector Current（Pulse）⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ 2A
IB— — Base Current⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ 0.6A
█ ELECTRICAL CHARACTERISTICS（Ta=25℃）
1―Base，B
2―Collector，C
3―Emitter, E
Symbol
Characteristics
Min
Typ
Max
Unit
Test Conditions
BVCEO Collector-Emitter Breakdown Voltage
IC=30mA, IB=0
400
V
ICEO
IEBO
ICES
Collector Cut-off Current
Emitter-Base Cutoff Current
Collector Cut-off Current
VCE=300V, IB=0
1
1
mA
mA
mA
VEB=5V, IC=0
VCE=500V, VEB=0
VCE=10V, IC=0.3A
VCE=10V, IC=1A
VCE=10V, IC=0.2A,f=1MHz
IC=1A, IB=0.2A
1
HFE（1） DC Current Gain
22
10
20
150
HFE（2）
HFE
VCE(sat) Collector- Emitter Saturation Voltage
VBE(on) Base-Emitter On Voltage
1
V
V
VCE=10V, IC=1A
1.5
fT
Current Gain-Bandwidth Product
10
MHz VCE=10V,IC=0.1A,f=2MHz
℃/W
RθJC
RθJA
3.125
62.5
℃/W
NPN S I L I C O N TRANSISTOR
Shantou Huashan Electronic Devices Co.,Ltd.
HP50
Figure 2。Switching Time Equivalent Circuit
Figure1。Power derating
Figure 4。Active Region Safe Operating Area
Figure 3。Turn-On Time
Figure 5。Thermal Response
NPN S I L I C O N TRANSISTOR
Shantou Huashan Electronic Devices Co.,Ltd.
HP50
Figure 7。Temperature Coefficients
Figure 6。Turn-Off Time
Figure 8。Inductive Load Switching
Figure 9。DC Current Gain
Figure 10。“On”Voltages
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