HS649A [HUASHAN]
PNP SILICON TRANSISTOR; PNP硅晶体管
| 型号： | HS649A |
| 厂家： | 
SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD |
| 描述： | PNP SILICON TRANSISTOR |
| 文件： | 总1页 (文件大小：246K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PNP S I L I C O N T R A N S I S T O R
Shantou Huashan Electronic Devices Co.,Ltd.
HS649A
█ APPLICATIONS
Low FrequancyPowerAmplifier.
█ ABSOLUTE MAXIMUM RATINGS（Ta=25℃）
TO-126
Tstg— — Storage Temperature⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ -55~150℃
Tj— — Junction Temperature⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ 150℃
PC— — Collector Dissipation（Tc=25℃）⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ 20W
PC— — Collector Dissipation（TA=25℃）⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ 1W
VCBO— — Collector-Base Voltage⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ -180V
VCEO— — Collector-Emitter Voltage⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ -160V
VEBO— — Emitter-Base Voltage⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ -5V
IC— — Collector Current⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ -1.5A
1―Emitter，E
2―Collector，C
3―Base，B
█ ELECTRICAL CHARACTERISTICS（Ta=25℃）
Symbol
Characteristics
Min
Typ
Max Unit
Test Conditions
BVCBO Collector-Base Breakdown Voltage
BVCEO Collector-Emitter Breakdown Voltage
BVEBO Emitter-Base Breakdown Voltage
-180
-160
-5
V
IC=-1mA, IE=0
IC=-10mA, IB=0
V
V
IE=-1mA, IC=0
ICBO
Collector Cut-off Current
VCB=-160V, IE=0
-10 μA
200
HFE（1） DC Current Gain
VCE=-5V, IC=-150mA
VCE=-5V, IC=-500mA
IC=-500mA, IB=-50mA
VCE=-5V, IC=-150mA
VCE=-5V, IC=-150mA,
60
30
HFE（2） DC Current Gain
VCE(sat) Collector- Emitter Saturation Voltage
-1
V
V
VBE
ft
Base-Emitter Voltage
-1.5
Current Gain-Bandwidth Product
Output Capacitance
140
27
MHz
Cob
pF VCB=-10V, IE=0，f=1MHz
█ hFE Classification
B
C
60— 120
100— 200
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