HY1403U [HUAYI]
N-Channel Enhancement Mode MOSFET;
| 型号： | HY1403U |
| 厂家： | 
HUAYI MICROELECTRONICS CO.,LTD. |
| 描述： | N-Channel Enhancement Mode MOSFET |
| 文件： | 总12页 (文件大小：1538K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HY1403D/U/V
N-Channel Enhancement Mode MOSFET
Features
Pin Description
z
30V/42A
RDS(ON) = 10 mΩ(typ.) @VGS =- 10V
RDS(ON) = 14 mΩ(typ.) @VGS = -4.5V
S
D
S
z
z
z
100% Avalanche Tested
Reliable and Rugged
G
D
G
S
D
G
Halogen
Free and Green Devices Available
(RoHS Compliant)
TO-252-2L
TO-251-3L
TO-251-3S
Applications
z
z
Switching Application
Power Management for DC/DC
N-Channel MOSFET
Ordering and Marking Information
Package Code
U : TO-251-3L
D : TO-252-2L
V: TO-251-3S
D
U
V
HY1403 HY1403 HY1403
Assembly Material
G : Halogen Free
Date Code
YYXXX WW
YYXXXJWW G YYXXXJWW G YYXXXJWW G
Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate
Termi-Nation finish;which are fully compliant with RoHS. HUAYI lead-free products meet or exceed the lead-
Free require-ments of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature.
HUAYI defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed
900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
HUAYI reserves the right to make changes, corrections, enhancements, modifications, and improveme nts to
this pr-oduct and/or to this document at any time without notice.
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HY1403D/U/S
Absolute Maximum Ratings
Symbol
Parameter
Rating
Unit
Common Ratings (TC=25°C Unless Otherwise Noted)
VDSS
VGSS
TJ
Drain-Source Voltage
30
V
±20
Gate-Source Voltage
Maximum Junction Temperature
Storage Temperature Range
Diode Continuous Forward Current
150
°C
°C
A
-55 to 150
TSTG
IS
TC=25°C
42
Mounted on Large Heat Sink
IDM
TC=25°C
TC=25°C
TC=100°C
TC=25°C
140**
42
A
A
Pulsed Drain Current *
ID
Continuous Drain Current
30
30
PD
Maximum Power Dissipation
W
12
T =100°C
c
Thermal Resistance-Junction to Case
Thermal Resistance-Junction to Ambient
Drain-Source Avalanche Energy
4.2
°C/W
°C/W
mJ
RJC
RJA
EAS
110
70***
L=0.5mH
Note：
*
Repetitive rating ; pulse width limiited by junction temperature
** Drain current is limited by junction temperature
*** VD=24V
Electrical Characteristics (TC = 25C Unless Otherwise Noted)
HY1403
Symbol
Parameter
Test Conditions
Unit
Min. Typ. Max.
Static Characteristics
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
VGS(th) Gate Threshold Voltage
30
-
-
-
1
V
VGS=0V, IDS=250A
VDS=30V, VGS=0V
-
A
TJ=125°C
-
1.0
-
-
50
1.6
-
3.0
±100
11
V
VDS=VGS, IDS=250A
VGS=±20V, VDS=0V
VGS=10V, IDS=21A
VGS=4.5V, IDS=21A
IGSS
Gate Leakage Current
nA
-
10
14
m
m
*
RDS(ON)
Drain-Source On-state Resistance
17
Diode Characteristics
*
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
ISD=21A, VGS=0V
-
-
-
0.8
21
13
1.1
V
-
-
ns
nC
IDS=21A, dlSD/dt=100A/s
Qrr
2
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HY1403D/U/S
Electrical Characteristics (Cont.) (TC = 25C Unless Otherwise Noted)
HY1403
Symbol
Parameter
Test Conditions
Unit
Min. Typ. Max.
Dynamic Characteristics
RG
Ciss
Coss
Crss
Gate Resistance
VGS=0V,VDS=0V,F=1MHz
-
-
-
-
-
-
-
-
2.9
1012
251
119
15
-
-
Input Capacitance
VGS=0V,
VDS=15V,
Frequency=1.0MHz
pF
Output Capacitance
Reverse Transfer Capacitance
-
-
td(ON) Turn-on Delay Time
Tr Turn-on Rise Time
td(OFF) Turn-off Delay Time
Tf Turn-off Fall Time
Gate Charge Characteristics
28
24
35
19
VDD=15 V, RG= 3 ,
13
I
DS =21A, VGS=10 V,
ns
20
10
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
-
-
-
29
-
-
-
V
I
DS=24V, VGS=10 V,
DS =21A
nC
4.6
4.3
Note * : Pulse test ; pulse width 300s, duty cycle2%.
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HY1403D/U/S
Typical Operating Characteristics
Power Dissipation
Drain Current
60
60
50
50
40
30
20
10
40
30
20
10
TC=25oC
0
TC=25oC,VG=10V
0
20 40 60 80 100 120 140 160 180 200
0
20 40 60 80 100 120 140 160 180 200
Tc -
Temperature (°C)
Tc-Case Temperature (°C)
Case
Safe Operation Area
400
100
Limit
100s
Rds(on)
1ms
10
1
10ms
DC
TC=25OC
0.1
0.01
0.1
1
10
100
400
VDS - Drain - Source Voltage (V)
Thermal Transient Impedance
10
1
Duty = 0.5
0.2
0.1
0.05
0.1
0.02
0.01
0.01
Single
Mounted on minimum pad
RJA : 110oC/W
0.001
0.1
0.0001
0.001
0.01
1
10
Square Wave Pulse Duration (sec)
4
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HY1403D/U/S
Typical Operating Characteristics (Cont.)
Drain-Source On Resistance
Output Characteristics
80
70
60
50
40
30
20
10
0
17
15
13
11
9
VGS=4.5V
VGS= 4.5,5,6,7,8,9,10V
VGS=10V
4V
7
3.5V
3V
5
3
1
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0
10
20
30
40
50
VDS - Drain - Source Voltage (V)
ID - Drain Current (A)
Gate-Source On Resistance
Gate Threshold Voltage
1.6
24
20
16
12
8
IDS=21A
IDS =250A
1.4
1.2
1.0
0.8
0.6
0.4
0.2
4
0
2
3
4
5
6
7
8
9
10
-50 -25
0
25 50 75 100 125 150
VGS - Gate - Source Voltage (V)
Tj - Junction Temperature (°C)
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HY1403D/U/S
Typical Operating Characteristics (Cont.)
Drain-Source On Resistance
Source-Drain Diode Forward
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
200
100
VGS = 10V
IDS = 21A
Tj=150oC
10
1
Tj=25oC
RON@Tj=25oC: 10m
0.1
-50 -25
0
25 50 75 100 125 150
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
Tj - Junction Temperature (°C)
VSD - Source - Drain Voltage (V)
Capacitance
Gate Charge
10
1600
1400
1200
1000
800
600
400
200
0
Frequency=1MHz
VDS= 24V
DS= 21A
9
8
7
6
5
4
3
2
1
0
I
Ciss
Coss
Crss
0
5
10
15
20
25
30
0
5
10
15
20
25
30
VDS - Drain - Source Voltage (V)
QG -Gate Charge (nC)
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HY1403D/U/S
Avalanche Test Circuit
VDS
L
VDSX(SUS)
tp
DUT
VDS
IAS
RG
VDD
VDD
IL
tp
EAS
0.01Ω
tAV
Switching Time Test Circuit
VDS
RD
VDS
90%
DUT
VGS
RG
VDD
10%
VGS
tp
td(on) tr
td(off) tf
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HY1403D/U/S
Package Information
TO-252-2L
COMMON DIMENSIONS
mm
SYMBOL
MIN
2.20
0.00
0.97
0.68
5.20
0.43
5.98
NOM
2.30
MAX
2.40
0.20
1.17
0.90
5.50
0.63
6.22
A
A1
A2
b
-
1.07
0.78
b3
c
5.33
0.53
D
6.10
D1
E
5.30REF
6.60
6.40
4.63
6.80
-
E1
e
-
2.286BSC
H
9.40
1.38
10.10 10.50
L
1.50
1.75
L1
L2
L3
L4
L5
θ
2.90REF
0.51BSC
0.88
-
-
1.28
1.00
1.95
8°
-
1.80
-
1.65
0°
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HY1403D/U/S
TO-251-3L
COMMON DIMENSIONS
mm
SYMBOL
MIN
2.20
0.97
0.68
0.00
0.00
5.20
0.43
5.98
NOM
2.30
MAX
2.40
1.17
0.90
0.10
0.10
5.50
0.63
6.22
A
A2
b
1.07
0.78
b2
b2'
b3
c
0.04
0.04
5.33
0.53
D
6.10
D1
E
5.30REF
6.60
6.40
4.63
6.80
-
E1
e
-
2.286BSC
16.52
9.40
H
16.22
9.15
0.88
1.65
16.82
9.65
1.28
1.95
L1
L3
L5
1.02
1.80
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HY1403D/U/S
TO-251-3L
COMMON DIMENSIONS
mm
SYMBOL
MIN
2.20
0.97
0.68
5.20
0.43
5.98
NOM
2.30
MAX
2.40
1.17
0.90
5.50
0.63
6.22
A
A2
b
1.07
0.78
b3
c
5.33
0.53
D
6.10
D1
E
5.30REF
6.60
6.40
4.63
6.80
-
E1
e
-
2.286BSC
11.22
4.10
H
10.00
3.90
0.88
1.65
11.44
4.30
1.28
1.95
L1
L3
L5
1.02
1.80
10
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HY1403D/U/S
Device Per Unit
Package Type
TO-252-2L
Unit
Tube
Quantity
75
TO-252-2L
Reel
Tube
Tube
2500
75
TO-251-3L
TO-251-3S
75
Classification Profile
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HY1403D/U/S
Classification Reflow Profiles
Profile Feature
Sn-Pb Eutectic Assembly
Pb-Free Assembly
Preheat & Soak
100 C
150 C
60-120 seconds
150 C
200 C
60-120 seconds
Temperature min (Tsmin
)
Temperature max (Tsmax
)
Time (Tsmin to Tsmax) (ts)
Average ramp-up rate
(Tsmax to TP)
3 C/second max.
3C/second max.
Liquidous temperature (TL)
Time at liquidous (tL)
183 C
60-150 seconds
217 C
60-150 seconds
Peak package body Temperature
(Tp)*
See Classification Temp in table 1
20** seconds
See Classification Temp in table 2
30** seconds
Time (tP)** within 5C of the specified
classification temperature (Tc)
Average ramp-down rate (Tp to Tsmax
)
6 C/second max.
6 C/second max.
6 minutes max.
8 minutes max.
Time 25C to peak temperature
* Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum.
** Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum.
Table 1. SnPb Eutectic Process – Classification Temperatures (Tc)
Volume mm3
Package
Thickness
Volume mm3
<350
≥350
<2.5 mm
235 C
220 C
220 C
2.5 mm
220 C
Table 2. Pb-free Process – Classification Temperatures (Tc)
Package
Thickness
<1.6 mm
Volume mm3
Volume mm3
350-2000
260 C
Volume mm3
<350
260 C
260 C
250 C
>2000
260 C
245 C
245 C
1.6 mm – 2.5 mm
2.5 mm
250 C
245 C
Reliability Test Program
Test item
SOLDERABILITY
Method
JESD-22, B102
JESD-22, A108
JESD-22, A102
JESD-22, A104
Description
5 Sec, 245qC
168 Hrs /500 Hrs /1000 Hrs, Bias @ 150°C
96 Hrs, 100ꢀRH, 2atm, 121qC
500 Cycles, -55qC~150qC
HOLT
PCT
TCT
&XVWRPHUꢀ6HUYLFH
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Technical Support: Technology@hymexa.com
Huayi Microelectronics Co., Ltd.
No.8928,Shangji Road,Economic and Technological Development Zone,Xi'an,China
TEL: (86-029) 86685706
FAX: (86-029) 86685705
E-mail: sales@hymexa.com
Web net: www.hymexa.com
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