HY1605D [HUAYI]

N-Channel Enhancement Mode MOSFET;


型号：	HY1605D
厂家：	HUAYI MICROELECTRONICS CO.,LTD.
描述：	N-Channel Enhancement Mode MOSFET
文件：	总11页 (文件大小：1620K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

HY1605D/U/V

N-Channel Enhancement Mode MOSFET

Feature

Pin Description



55V/60A

R_{DS(ON)= 7.7mΩ(typ.) @VGS = 10V}

R_{DS(ON)= 8.7mΩ(typ.) @VGS = 4.5V}



100% Avalanche Tested

Reliable and Rugged

Halogen Free and Green Devices Available (RoHS

Compliant)

TO-252-2L

TO-251-3L

TO-251-3S

Applications



Power Management for Inverter Systems

Synchronous Rectification

N-Channel MOSFET

Ordering and Marking Information

Package Code

D: TO-252-2L U: TO-251-3L V:TO-251-3S

HY1605

YYXXXJWW G

Date Code

YYXXX WW

Assembly Material

G:Halogen Free

YYXXXJWW G YYXXXJWW G

Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate Termi-

Nation finish;which are fully compliant with RoHS. HUAYI lead-free products meet or exceed the lead-Free require-

ments of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature. HUAYI defines “Green”

to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous

material and total of Br and Cl does not exceed 1500ppm by weight).

HUAYI reserves the right to make changes, corrections, enhancements, modifications, and improveme nts to this pr-

oduct and/or to this document at any time without notice.

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HY1605D/U/V

Absolute Maximum Ratings

Symbol

Parameter

Rating

Unit

Common Ratings (Tc=25°C Unless Otherwise Noted)

V^DSS

V^GSS

T^J

Drain-Source Voltage

±20

Gate-Source Voltage

Maximum Junction Temperature

Storage Temperature Range

Source Current-Continuous(Body Diode)

175

°C

T^STG

I^S

-55 to 175

Tc=25°C

Mounted on Large Heat Sink

I^DMPulsed Drain Current *

Tc=25°C

Tc=100°C

Tc=25°C

Tc=100°C

210

I^D

Continuous Drain Current

P^D

Maximum Power Dissipation

R_^JC

R_JA

E^AS

°C/W

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient **

Single Pulsed-Avalanche Energy ***

2.6

110

190

L=0.5mH

Note:

Repetitive rating；pulse width limited by max. junction temperature.

** Surface mounted on FR-4 board.

*** Limited by T^Jmax , starting T^J=25°C, L = 0.5mH, R^G= 25Ω, V^GS=10V.

Electrical Characteristics^{(Tc =25°C Unless Otherwise Noted)}

HY1605

Symbol

Parameter

Test Conditions

Unit

Min

Typ.

Max

Static Characteristics

V_GS=0V,I_DS=250μA

V^DS=55V,V^GS=0V

BV^DSS

Drain-Source Breakdown Voltage

μA

I^DSS

Drain-to-Source Leakage Current

T^J=125°C

V^DS=V^GS, I_DS=250μA

V^GS=±20V,V^DS=0V

V_GS=10V,I_DS=20A

V_GS=4.5V,I_DS=20A

V^GS(th)

I^GSS

Gate Threshold Voltage

1.4

Gate-Source Leakage Current

±100

8.6

7.7

8.7

R^DS(ON)*

Drain-Source On-State Resistance

mΩ

Diode Characteristics

Synchronous Rectification

I^SD=20A,V^GS=0V

0.8

1.3

V^SD*

t^rr

Reverse Recovery Time

Reverse Recovery Charge

I^SD=20A,dI^SD/dt=100A/μs

Q^rr

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HY1605D/U/V

Electrical Characteristics (Cont.) ^{(Tc =25°C Unless Otherwise Noted)}

HY1605

Typ.

Symbol

Parameter

Test Conditions

Unit

Min

Max

Dynamic Characteristics

V_GS=0V,V_DS=0V,F=1

MHz

R^G

Gate Resistance

1.3

Ω

C^iss

C^oss

C^rss

t^d(ON)

T^r

Input Capacitance

2301

125.8

V^GS=0V,

Output Capacitance

Reverse Transfer Capacitance

Turn-on Delay Time

Turn-on Rise Time

V^DS=25V,

Frequency=1.0MHz

V^DD=20V,R^G=4Ω,

I^DS=20A,V^GS=10V

t^d(OFF)

T^f

Turn-off Delay Time

Turn-off Fall Time

Gate Charge Characteristics

Q^g

Q^gs

Q^gd

Total Gate Charge

V_DS=44V, V_GS=10V，

Gate-Source Charge

Gate-Drain Charge

ID=20A

16.6

Note: *Pulse test，pulse width ≤ 300us，duty cycle ≤ 2%

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Typical Operating Characteristics

Figure 1: Power Dissipation

Figure 2: Drain Current

Tc-Case Temperature(℃)

Figure 3: Safe Operation Area

Figure 4: Thermal Transient Impedance

V^DS-Drain-Source Voltage(V)

Maximum Effective Transient Thermal

Impedance, Junction‐to‐Case

Figure 5: Output Characteristics

Figure 6: Drain-Source On Resistance

V^DS-Drain-Source Voltage (V)

I^D-Drain Current(A)

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Typical Operating Characteristics(Cont.)

Figure 7: On-Resistance vs. Temperature

Figure 8: Source-Drain Diode Forward

Tj-Junction Temperature (℃)

V^SD-Source-Drain Voltage(V)

Figure 9: Capacitance Characteristics

Figure 10: Gate Charge Characteristics

V^DS-Drain-Source Voltage (V)

Q^G-Gate Charge (nC)

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Avalanche Test Circuit

Switching Time Test Circuit

Gate Charge Test Circuit

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HY1605D/U/V

Device Per Unit

Package Type

TO-252-2L

Unit

Tube

Quantity

TO-252-2L

Reel

Tube

2500

TO-251-3L

TO-251-3S

Package Information

TO-252-2L

COMMON DIMENSIONS

SYMBOL

MIN

2.20

0.00

0.97

0.68

5.20

0.43

5.98

NOM

2.30

MAX

2.40

0.20

1.17

0.90

5.50

0.63

6.22

1.07

0.78

5.33

0.53

6.10

5.30REF

6.60

6.40

4.63

6.80

2.286BSC

9.40

1.38

10.10 10.50

1.50

1.75

2.90REF

0.51BSC

0.88

1.28

1.00

1.95

8°

1.80

1.65

0°

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HY1605D/U/V

TO-251-3L

COMMON DIMENSIONS

SYMBOL

MIN

2.20

0.97

0.68

0.00

5.20

0.43

5.98

NOM

2.30

MAX

2.40

1.17

0.90

0.10

5.50

0.63

6.22

1.07

0.78

b2'

0.04

5.33

0.53

6.10

5.30REF

6.60

6.40

4.63

6.80

2.286BSC

16.52

9.40

16.22

9.15

0.88

1.65

16.82

9.65

1.28

1.95

1.02

1.80

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HY1605D/U/V

TO-251-3S

COMMON DIMENSIONS

SYMBOL

MIN

2.20

0.97

0.68

5.20

0.43

5.98

NOM

2.30

MAX

2.40

1.17

0.90

5.50

0.63

6.22

1.07

0.78

5.33

0.53

6.10

5.30REF

6.60

6.40

4.63

6.80

2.286BSC

11.22

4.10

10.00

3.90

0.88

1.65

11.44

4.30

1.28

1.95

1.02

1.80

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HY1605D/U/V

Classification Profile

Classification Reflow Profiles

Profile Feature

Preheat & Soak

Sn-Pb Eutectic Assembly

Pb-Free Assembly

100 °C

150 °C

200 °C

Temperature min (T^smin

)

Temperature max (T^smax

)

60-120 seconds

Time (Tsmin to Tsmax) (t

Average ramp-up rate

3 °C/second max.

3°C/second max.

(T^smaxto T

Liquidous temperature (T

Time at liquidous (t

Peak package body Temperature

(T )*

Time (t

classification temperature (T

Average ramp-down rate (T

Time 25°C to peak temperature

)

183 °C

217 °C

)

60-150 seconds

See Classification Temp in table 1 See Classification Temp in table 2

)** within 5°C of the specified

20** seconds

30** seconds

)

to T^smax

)

6 °C/second max.

6 minutes max.

6 °C/second max.

8 minutes max.

*Tolerance for peak profile Temperature (T^p) is defined as a supplier minimum and a user maximum.

** Tolerance for time at peak profile temperature (t ) is defined as a supplier minimum and a user maximum.

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Table 1.SnPb Eutectic Process – Classification Temperatures (Tc)

Package

Thickness

＜2.5 mm

≥2.5 mm

Volume mm³

<350

Volume mm³

≥350

235 °C

220 °C

Table 2.Pb-free Process – Classification Temperatures (Tc)

Package

Thickness

<1.6 mm

Volume mm³

<350

Volume mm³

350-2000

260 °C

Volume mm³

≥2000

260 °C

1.6 mm – 2.5 mm

≥2.5 mm

260 °C

250 °C

245 °C

250 °C

245 °C

Reliability Test Program

Test item

Method

Description

SOLDERABILITY

JESD-22, B102

JESD-22, A108

JESD-22, A102

JESD-22, A104

5 Sec, 245qC

168 Hrs /500 Hrs /1000 Hrs, Bias @ 150°C

96 Hrs, 100ꢀRH, 2atm, 121qC

500 Cycles, -55qC~150qC

HOLT

PCT

TCT

&XVWRPHUꢀ6HUYLFH

Worldwide Sales and Service: sales@hymexa.com

Technical Support: Technology@hymexa.com

Huayi Microelectronics Co., Ltd.

No.8928,Shangji Road,Economic and Technological Development Zone,Xi'an,China

TEL: (86-029) 86685706

FAX: (86-029) 86685705

E-mail: sales@hymexa.com

Web net: www.hymexa.com

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