HY1607U [HUAYI]
N-Channel Enhancement Mode MOSFET;
| 型号： | HY1607U |
| 厂家： | 
HUAYI MICROELECTRONICS CO.,LTD. |
| 描述： | N-Channel Enhancement Mode MOSFET |
| 文件： | 总11页 (文件大小：1094K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HY1607D/U/V
N-Channel Enhancement Mode MOSFET
Features
Pin Description
•
68V/70A
R
DS(ON) = 6.8m(typ.) @ VGS=10V
•
•
•
100% avalanche tested
Reliable and Rugged
S
D
G
Lead Free and GreenDevicesAvailable
(RoHS Compliant)
S
G
TO-252-2L
TO-251-3L
Applications
Power Management for Inverter Systems.
N-Channel MOSFET
Ordering and Marking Information
Package Code
D : TO-252-2L
U : TO-251-3L
D
U
HY1607
HY1607
Assembly Material
G : Lead Free Device
Date Code
YYXXX WW
YYXXXJWW G
YYXXXJWW G
Note: HUAYI lead -free products contain molding compounds/die attach materials and 100% matte tin plate
Termination finish;which are fully compliant with RoHS. HUAYI lead -free products meet or exceed the lead-
Free requirements of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature.
HUAYI defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed
900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
HUAYI reserves the right to make changes, corrections, enhancements, modifications, and improvements to
this pr-oduct and/or to this document at any time without notice.
www.hymexa.com
V1.1
1
HY1607D/U/V
Absolute Maximum Ratings
Symbol
Parameter
Rating
Unit
Common Ratings (TC=25°C Unless Otherwise Noted)
VDSS
VGSS
TJ
Drain-Source Voltage
68
±25
V
Gate-Source Voltage
Maximum Junction Temperature
Storage Temperature Range
Diode Continuous Forward Current
175
°C
°C
A
TSTG
IS
-55 to 175
70
TC=25°C
Mounted on Large Heat Sink
IDM
Pulsed Drain Current *
TC=25°C
TC=25°C
TC=100°C
TC=25°C
TC=100°C
280**
70
A
A
ID
Continuous Drain Current
60
75
PD
Maximum Power Dissipation
W
37.5
2
Thermal Resistance-Junction to Case
Thermal Resistance-Junction to Ambient
RJC
RJA
°C/W
110
Avalanche Ratings
EAS Avalanche Energy, Single Pulsed
Note：
L=0.5mH
280**
mJ
*
Repetitive rating ; pulse width limiited by junction temperature
** Drain current is limited by junction temperature
*** VD=55V
Electrical Characteristics (TC = 25C Unless Otherwise Noted)
HY1607
Symbol
Parameter
Test Conditions
Unit
Min. Typ. Max.
Static Characteristics
-
BVDSS Drain-Source Breakdown Voltage
68
-
-
1
V
VGS=0V, IDS=250A
VDS=68V, VGS=0V
-
IDSS Zero Gate Voltage Drain Current
A
TJ=85°C
-
-
3
10
4
VGS(th) Gate Threshold Voltage
IGSS Gate Leakage Current
RDS(ON)
Diode Characteristics
2
-
V
VDS=VGS, IDS=250A
VGS=±25V, VDS=0V
-
±100
8.5
nA
m
*
Drain-Source On-state Resistance VGS=10V, IDS=35A
-
6.8
VSD*
trr
Diode Forward Voltage
ISD=35A, VGS=0V
-
-
-
0.8
33
60
1
-
V
Reverse Recovery Time
Reverse Recovery Charge
ns
nC
ISD=35A, dlSD/dt=100A/s
Qrr
-
www.hymexa.com
V1.1
2
HY1607D/U/V
Electrical Characteristics (Cont.) (TC = 25C Unless Otherwise Noted)
HY1607
Symbol
Parameter
Test Conditions
Unit
Min. Typ. Max.
Dynamic Characteristics
RG
Ciss
Coss
Crss
td(ON)
Tr
Gate Resistance
VGS=0V,VDS=0V,F=1MHz
-
-
-
-
-
-
-
-
1.5
3200
351
290
14
-
-
-
-
-
-
-
-
Input Capacitance
VGS=0V,
VDS=25V,
Frequency=1.0MHz
pF
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Turn-on Rise Time
VDD=34V, RG= 5 ,
IDS=35A, VGS=10V,
13
ns
td(OFF) Turn-off Delay Time
Tf Turn-off Fall Time
Gate Charge Characteristics
20
7
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
-
-
-
84
13
27
-
-
-
VDS=55V, VGS=10V,
IDS=35A
nC
Note * : Pulse test ; pulse width 300s, duty cycle2%.
www.hymexa.com
V1.1
3
HY1607D/U/V
Typical Operating Characteristics
Power Dissipation
Drain Current
175
90
80
70
60
50
40
30
20
10
0
150
125
100
75
50
25
TC=25oC
0
TC=25oC,VG=10V
0
20 40 60 80 100 120 140 160 180 200
0
20 40 60 80 100 120 140 160 180 200
Tc -
Temperature (°C)
Tc-Case Temperature (°C)
Case
Safe Operation Area
600
100
100us
1ms
Rds(on) Limit
10
1
10ms
DC
TC=25oC
0.1
0.01
0.1
1
10
100 500
VDS - Drain - Source Voltage (V)
Thermal Transient Impedance
10
1
Duty = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
Mounted on minimum pad
RJA : 110o C/W
0.01
Single
0.001
0.1
0.0001
0.001
0.01
1
10
Square Wave Pulse Duration (sec)
www.hymexa.com
V1.1
4
HY1607D/U/V
Typical Operating Characteristics (Cont.)
Output Characteristics
VGS= 6,7,8,9,10V
5.5V
Drain-Source On Resistance
8.0
7.5
160
140
120
100
80
V
GS =10V
7.0
6.5
6.0
5.5
60
5V
40
20
4.5V
0
0
20
40
60
80
100
0
1.0
2.0
3.0
4.0
5.0
6.0
VDS - Drain-Source Voltage (V)
ID - Drain Current (A)
Drain-Source On Resistance
Gate Threshold Voltage
17
15
13
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
IDS=35A
IDS =250A
11
9
7
5
4
5
6
7
8
9
10
-50 -25
0
25 50 75 100 125 150 175
VGS - Gate - Source Voltage (V)
Tj - Junction Temperature (°C)
www.hymexa.com
V1.1
5
HY1607D/U/V
Typical Operating Characteristics (Cont.)
Drain-Source On Resistance
Source-Drain Diode Forward
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
170
100
VGS = 10V
IDS = 35A
Tj=175oC
10
1
Tj=25oC
RON@Tj=25oC: 6.8m
0.1
-50 -25
0
25 50 75 100 125 150 175
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
Tj - Junction Temperature (°C)
VSD - Source-Drain Voltage (V)
Capacitance
Gate Charge
10
5500
5000
Frequency=1MHz
VDS= 55V
IDS= 35A
9
8
7
6
5
4
3
2
1
0
4500
4000
3500
3000
2500
2000
1500
1000
500
Ciss
Coss
Crss
0
0
5
10 15 20 25 30 35 40
13 26 39 52 65 78 91 104
0
VDS - Drain - Source Voltage (V)
QG -Gate Charge (nC)
V1.1
6
HY1607D/U/V
Avalanche Test Circuit
Switching Time Test Circuit
Gate Charge Test Circuit
www.hymexa.com
V1.1
7
HY1607D/U/V
Device Per Unit
Package Type
TO-252-2L
Unit
Tube
Reel
Tube
Quantity
75
2500
75
TO-252-2L
TO-251-3L
Package Information
TO-252-2L
COMMON DIMENSIONS
mm
SYMBOL
MIN
2.20
0.00
0.97
0.68
5.20
0.43
5.98
NOM
2.30
-
MAX
2.40
0.20
1.17
0.90
5.50
0.63
6.22
A
A1
A2
b
1.07
0.78
5.33
0.53
6.10
5.30REF
6.60
-
b3
c
D
D1
E
6.40
4.63
6.80
-
E1
e
2.286BSC
10.10
1.50
2.90REF
0.51BSC
-
H
9.40
1.38
10.50
1.75
L
L1
L2
L3
L4
L5
θ
0.88
-
1.28
1.00
1.95
8°
-
1.65
0°
1.80
-
www.hymexa.com
V1.1
8
HY1607D/U/V
TO-251-3L
COMMON DIMENSIONS
mm
SYMBOL
MIN
2.20
0.97
0.68
0.00
0.00
5.20
0.43
5.98
NOM
2.30
MAX
2.40
1.17
0.90
0.10
0.10
5.50
0.63
6.22
A
A2
b
1.07
0.78
b2
b2'
b3
c
0.04
0.04
5.33
0.53
D
6.10
D1
E
5.30REF
6.60
6.40
4.63
6.80
-
E1
e
-
2.286BSC
16.52
9.40
H
16.22
9.15
0.88
1.65
16.82
9.65
1.28
1.95
L1
L3
L5
1.02
1.80
www.hymexa.com
V1.1
9
HY1607D/U/V
Classification Profile
Classification Reflow Profiles
Profile Feature
Preheat & Soak
Sn-Pb Eutectic Assembly
Pb-Free Assembly
100 °C
150 °C
150 °C
200 °C
Temperature min (Tsmin
)
Temperature max (Tsmax
)
60-120 seconds
60-120 seconds
Time (Tsmin to Tsmax) (t
Average ramp-up rate
s
)
3 °C/second max.
3°C/second max.
(Tsmax to T
Liquidous temperature (T
Time at liquidous (t
Peak package body Temperature
(T )*
Time (t
classification temperature (T
Average ramp-down rate (T
Time 25°C to peak temperature
P
)
L
)
183 °C
217 °C
L
)
60-150 seconds
60-150 seconds
See Classification Temp in table 1 See Classification Temp in table 2
p
P
)** within 5°C of the specified
20** seconds
30** seconds
c
)
p
to Tsmax
)
6 °C/second max.
6 minutes max.
6 °C/second max.
8 minutes max.
*Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum.
** Tolerance for time at peak profile temperature (t ) is defined as a supplier minimum and a user maximum.
p
www.hymexa.com
V1.1
10
HY1607D/U/V
Table 1. SnPb Eutectic Process – Classification Temperatures (Tc)
Volume mm3
Package
Thickness
Volume mm3
<350
≥350
<2.5 mm
235 C
220 C
220 C
2.5 mm
220 C
Table 2. Pb-free Process – Classification Temperatures (Tc)
Package
Thickness
<1.6 mm
Volume mm3
<350
Volume mm3
350-2000
260 C
Volume mm3
>2000
260 C
245 C
245 C
260 C
260 C
250 C
1.6 mm – 2.5 mm
2.5 mm
250 C
245 C
Reliability Test Program
Test item
SOLDERABILITY
Method
JESD-22, B102
Description
5 Sec, 245°C
HTRB
PCT
JESD-22, A108
JESD-22, A102
JESD-22, A104
168 Hrs /500 Hrs /1000 Hrs, Bias @ 150°C
96Hrs, 100%RH, 2atm, 121°C
500 Cycles, -55°C~150°C
TCT
Customer Service
Worldwide Sales and Service: sales@hymexa.com
Technical Support: Technology@hymexa.com
Huayi Microelectronics Co., Ltd.
No.8928,Shangji Road,Economic and Technological Development Zone,Xi'an,China
TEL: (86-029) 86685706
FAX: (86-029) 86685705
E-mail: sales@hymexa.com
Web net: www.hymexa.com
www.hymexa.com
V1.1
11
相关型号：
©2020 ICPDF网 联系我们和版权申明