HY1904V [HUAYI]
N-Channel Enhancement Mode MOSFET;
| 型号： | HY1904V |
| 厂家： | 
HUAYI MICROELECTRONICS CO.,LTD. |
| 描述： | N-Channel Enhancement Mode MOSFET |
| 文件： | 总11页 (文件大小：1238K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HY1904D/U/V
N-Channel Enhancement Mode MOSFET
Feature
Pin Description
z
40V/72A
RDS(ON)= 4.8mΩ(typ.)@VGS = 10V
RDS(ON)= 5.8mΩ(typ.)@VGS = 4.5V
z
z
z
100% Avalanche Tested
Reliable and Rugged
G
Halogen Free and Green Devices Available
(RoHS Compliant)
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Applications
z
z
Switching Application
Power Management for DC/DC
N-Channel MOSFET
Ordering and Marking Information
Package Code
D: TO-252-2L
U: TO-251-3L V:TO-251-3S
D
U
V
HY1904
HY1904
HY1904
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Date Code
YYXXX WW
Assembly Material
G:Halogen Free
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HY1904D/U/V
Absolute Maximum Ratings
Symbol
Parameter
Rating
Unit
Common Ratings (Tc=25°C Unless Otherwise Noted)
VDSS
VGSS
TJ
Drain-Source Voltage
40
±20
V
V
Gate-Source Voltage
Maximum Junction Temperature
Storage Temperature Range
Source Current-Continuous(Body Diode)
175
°C
°C
A
TSTG
IS
-55 to 175
72
Tc=25°C
Mounted on Large Heat Sink
Tc=25°C
Tc=25°C
Tc=100°C
Tc=25°C
Tc=100°C
288
72
A
A
IDM
Pulsed Drain Current *
ID
Continuous Drain Current
51
A
62.5
31
W
PD
Maximum Power Dissipation
W
RTJC
RTJA
EAS
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient **
Single Pulsed-Avalanche Energy ***
2.4
110
134
°C/W
°C/W
mJ
L=0.3mH
Note:
*
**
Repetitive rating˗pulse width limited by max. junction temperature.
Surface mounted on FR-4 board.
***
Limited by TJmax , starting TJ=25°C, L = 0.3mH, RG= 25Ω, VGS =10V.
Electrical Characteristics(Tc =25°C Unless Otherwise Noted)
HY1904
Symbol
Parameter
Test Conditions
Unit
Min
Typ.
Max
Static Characteristics
VGS=0V,IDS=250μA
BVDSS
Drain-Source Breakdown Voltage
40
-
-
-
-
1
V
VDS=40V,VGS=0V
μA
μA
V
IDSS
Drain-to-Source Leakage Current
TJ=125°C
-
-
50
VDS=VGS, IDS=250μA
VGS=f20V,VDS=0V
VGS=10V,IDS=36A
VGS=4.5V,IDS=36A
VGS(th)
IGSS
Gate Threshold Voltage
1
-
1.7
-
3
Gate-Source Leakage Current
±100
6.0
7.0
nA
-
4.8
5.8
RDS(ON)*
Drain-Source On-State Resistance
mΩ
-
Diode Characteristics
Diode Forward Voltage
ISD=36A,VGS=0V
-
-
-
0.83
53
1.1
V
VSD*
trr
Reverse Recovery Time
Reverse Recovery Charge
-
-
ns
nC
ISD=36A,dISD/dt=100A/μs
Qrr
78
2
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HY1904D/U/V
Electrical Characteristics (Cont.) (Tc =25°C Unless Otherwise Noted)
HY1904
Typ.
Symbol
Parameter
Test Conditions
Unit
Min
Max
Dynamic Characteristics
VGS=0V,VDS=0V,F=1
MHz
RG
Gate Resistance
-
1.6
-
Ω
Ciss
Coss
Crss
td(ON)
Tr
Input Capacitance
-
-
-
-
-
-
-
2164
202
75
-
-
-
-
-
-
-
VGS=0V,
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Turn-on Rise Time
VDS=25V,
pF
Frequency=1.0MHz
23
28
VDD=20V,RG=4Ω,
ns
IDS=36A,VGS=10V
td(OFF)
Tf
Turn-off Delay Time
Turn-off Fall Time
29
34
Gate Charge Characteristics
Qg
Qgs
Qgd
Total Gate Charge
-
-
-
51.5
5.5
11
-
-
-
VDS =32V, VGS=10Vˈ
nC
Gate-Source Charge
Gate-Drain Charge
ID=36A
Note: *Pulse testˈpulse width ≤ 300usˈduty cycle ≤ 2%
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HY1904D/U/V
Typical Operating Characteristics
Figure 1: Power Dissipation
Figure 2: Drain Current
Tc-Case Temperature(ć)
Tc-Case Temperature(ć)
Figure 3: Safe Operation Area
Figure 4: Thermal Transient Impedance
VDS-Drain-Source Voltage(V)
Maximum Effective Transient Thermal
Impedance, Junction-to-Case
Figure 5: Output Characteristics
Figure 6: Drain-Source On Resistance
VDS-Drain-Source Voltage (V)
ID-Drain Current(A)
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HY1904D/U/V
Typical Operating Characteristics(Cont.)
Figure 7: On-Resistance vs. Temperature
Figure 8: Source-Drain Diode Forward
Tj-Junction Temperature (ć)
VSD-Source-Drain Voltage(V)
Figure 9: Capacitance Characteristics
Figure 10: Gate Charge Characteristics
VDS-Drain-Source Voltage (V)
QG-Gate Charge (Q&)
5
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HY1904D/U/V
Avalanche Test Circuit
Switching Time Test Circuit
Gate Charge Test Circuit
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HY1904D/U/V
Device Per Unit
Package Type
TO-252-2L
Unit
Tube
Quantity
75
TO-252-2L
Reel
Tube
Tube
2500
75
TO-251-3L
TO-251-3S
75
Package Information
TO-252-2L
COMMON DIMENSIONS
mm
SYMBOL
MIN
2.20
0.00
0.97
0.68
5.20
0.43
5.98
NOM
2.30
-
MAX
2.40
0.20
1.17
0.90
5.50
0.63
6.22
A
A1
A2
b
1.07
0.78
5.33
0.53
6.10
5.30REF
6.60
-
b3
c
D
D1
E
6.40
4.63
6.80
-
E1
e
2.286BSC
10.10
1.50
2.90REF
0.51BSC
-
H
9.40
1.38
10.50
1.75
L
L1
L2
L3
L4
L5
θ
0.88
-
1.28
1.00
1.95
8°
-
1.65
0°
1.80
-
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HY1904D/U/V
TO-251-3L
COMMON DIMENSIONS
mm
SYMBOL
MIN
2.20
0.97
0.68
0.00
0.00
5.20
0.43
5.98
NOM
2.30
MAX
2.40
1.17
0.90
0.10
0.10
5.50
0.63
6.22
A
A2
b
1.07
0.78
b2
b2'
b3
c
0.04
0.04
5.33
0.53
D
6.10
D1
E
5.30REF
6.60
6.40
4.63
6.80
-
E1
e
-
2.286BSC
16.52
9.40
H
16.22
9.15
0.88
1.65
16.82
9.65
1.28
1.95
L1
L3
L5
1.02
1.80
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HY1904D/U/V
TO-251-3S
COMMON DIMENSIONS
mm
SYMBOL
MIN
2.20
0.97
0.68
5.20
0.43
5.98
NOM
2.30
MAX
2.40
1.17
0.90
5.50
0.63
6.22
A
A2
b
1.07
0.78
b3
c
5.33
0.53
D
6.10
D1
E
5.30REF
6.60
6.40
4.63
6.80
-
E1
e
-
2.286BSC
11.22
4.10
H
10.00
3.90
0.88
1.65
11.44
4.30
1.28
1.95
L1
L3
L5
1.02
1.80
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HY1904D/U/V
Classification Profile
Classification Reflow Profiles
Profile Feature
Preheat & Soak
Sn-Pb Eutectic Assembly
Pb-Free Assembly
100 °C
150 °C
150 °C
200 °C
Temperature min (Tsmin
)
Temperature max (Tsmax
)
60-120 seconds
60-120 seconds
Time (Tsmin to Tsmax) (t
Average ramp-up rate
s
)
3 °C/second max.
3°C/second max.
(Tsmax to T
Liquidous temperature (T
Time at liquidous (t
Peak package body Temperature
(T )*
Time (t
classification temperature (T
Average ramp-down rate (T
Time 25°C to peak temperature
P
)
L
)
183 °C
217 °C
L
)
60-150 seconds
60-150 seconds
See Classification Temp in table 1 See Classification Temp in table 2
p
P
)** within 5°C of the specified
20** seconds
30** seconds
c
)
p
to Tsmax
)
6 °C/second max.
6 minutes max.
6 °C/second max.
8 minutes max.
*Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum.
** Tolerance for time at peak profile temperature (t ) is defined as a supplier minimum and a user maximum.
p
10
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HY1904D/U/V
Table 1.SnPb Eutectic Process – Classification Temperatures (Tc)
Package
Thickness
˘2.5 mm
≥2.5 mm
Volume mmϢ
<350
Volume mmϢ
ı350
235 °C
220 °C
220 °C
220 °C
Table 2.Pb-free Process – Classification Temperatures (Tc)
Package
Thickness
<1.6 mm
Volume mmϢ
<350
Volume mmϢ
350-2000
260 °C
Volume mmϢ
ı2000
260 °C
260 °C
1.6 mm – 2.5 mm
ı2.5 mm
260 °C
250 °C
245 °C
250 °C
245 °C
245 °C
Reliability Test Program
Test item
Method
Description
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