HY3010V [HUAYI]
N-Channel Enhancement Mode MOSFET;
| 型号： | HY3010V |
| 厂家： | 
HUAYI MICROELECTRONICS CO.,LTD. |
| 描述： | N-Channel Enhancement Mode MOSFET |
| 文件： | 总11页 (文件大小：2189K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HY3010D/U/V
N-Channel Enhancement Mode MOSFET
Feature
Pin Description
100V/60A
RDS(ON)= 10mΩ(typ.) @VGS = 10V
100% Avalanche Tested
Reliable and Rugged
S
S
D
Halogen Free and Green Devices Available
(RoHS Compliant)
D
G
G
S
D
G
TO-252-2L
TO-251-3L
TO-251-3S
Applications
Portable equipment and battery powered systems
DC-DC Converters
Switching application
N-Channel MOSFET
U: TO-251-3L
Ordering and Marking Information
Package Code
D: TO-252-2L
D
U
V
V: TO-251-3S
Date Code
HY3010
HY3010
HY3010
YYXXXJWW G YYXXXJWW G YYXXXJWW G
YYXXXJWW G
Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plateTermi-
Nation finish; which are fully compliant with RoHS. HUAYI lead-free products meet or exceed the lead-Free require-
ments of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature. HUAYI defines “Green”
to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous
material and total of Br and Cl does not exceed 1500ppm by weight).
HUAYI reserves the right to make changes, corrections, enhancements, modifications, and improvements to this pr
-oduct and/or to this document at any time without notice.
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V1.1
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HY3010D/U/V
Absolute Maximum Ratings
Symbol
Parameter
Rating
Unit
Common Ratings (Tc=25°C Unless Otherwise Noted)
VDSS
VGSS
TJ
Drain-Source Voltage
V
V
100
±25
Gate-Source Voltage
Maximum Junction Temperature
Storage Temperature Range
Source Current-Continuous(Body Diode)
°C
°C
A
175
TSTG
IS
-55 to 175
60
Tc=25°C
Mounted on Large Heat Sink
Tc=25°C
Tc=25°C
Tc=100°C
Tc=25°C
Tc=100°C
A
A
IDM
Pulsed Drain Current *
228
60
ID
Continuous Drain Current
A
45
W
65
PD
Maximum Power Dissipation
W
33
RJC
RJA
EAS
°C/W
°C/W
mJ
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient **
SinglePulsed-Avalanche Energy ***
2.3
110
355
L=0.5mH
Note:
*
Repetitive rating；pulse width limited by max.junction temperature.
** Surface mounted on 1in2 FR-4 board.
*** Limited by TJmax , starting TJ=25°C, L = 0.5mH, VDS=80V, VGS =10V.
Electrical Characteristics(Tc =25°C Unless Otherwise Noted)
HY3010
Symbol
Parameter
Test Conditions
Unit
Min
Typ.
Max
Static Characteristics
VGS=0V,IDS= 250μA
VDS= 68V,VGS=0V
V
BVDSS
Drain-Source Breakdown Voltage
100
-
-
-
1
μA
μA
V
-
-
IDSS
Drain-to-Source Leakage Current
TJ=125°C
-
5
VDS=VGS, IDS= 250μA
VGS=±25V,VDS=0V
VGS= 10V,IDS= 30A
VGS(th)
IGSS
Gate Threshold Voltage
2
-
3
-
4
nA
mΩ
Gate-Source Leakage Current
Drain-Source On-State Resistance
±100
12
RDS(ON)
-
10
Diode Characteristics
Diode Forward Voltage
ISD=30A,VGS=0V
-
-
-
V
VSD
trr
0.9
30
50
1.2
Reverse Recovery Time
Reverse Recovery Charge
ns
nC
-
-
ISD=30A,dISD/dt=100A/μs
Qrr
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V1.1
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HY3010D/U/V
Electrical Characteristics (Cont.) (Tc =25°C Unless Otherwise Noted)
HY3010
Typ.
Symbol
Parameter
Test Conditions
Unit
Min
Max
Dynamic Characteristics
RG
Ciss
Coss
Crss
td(ON)
Tr
Gate Resistance
VGS=0V,VDS=0V,F=1MHz
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Ω
1.14
3197
361
230
19
Input Capacitance
VGS=0V,
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
VDS= 25V,
pF
Frequency=1.0MHz
50
VDD= 50V,RG=3.3Ω,
ns
IDS= 30A,VGS= 10V
td(OFF)
Tf
62
68
Gate Charge Characteristics
Qg
Qgs
Qgd
Total Gate Charge
-
-
-
81
13
26
-
-
-
VDS = 80V, VGS= 10V,
IDs= 30A
nC
Gate-Source Charge
Gate-Drain Charge
Note: *Pulse test，pulse width ≤ 300us，duty cycle ≤ 2%
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V1.1
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HY3010D/U/V
Typical Operating Characteristics
Figure 1: Power Dissipation
Figure 2: Drain Current
Tc-Case Temperature(℃)
Tc-Case Temperature(℃)
Figure 3: Safe Operation Area
Figure 4: Thermal Transient Impedance
VDS-Drain-Source Voltage(V)
Maximum Effective Transient Thermal
Impedance, Junction-to-Case
Figure 5: Output Characteristics
Figure 6: Drain-Source On Resistance
VDS-Drain-Source Voltage (V)
ID-Drain Current(A)
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V1.1
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HY3010D/U/V
Typical Operating Characteristics(Cont.)
Figure 7: On-Resistance vs. Temperature
Figure 8: Source-Drain Diode Forward
Tj-Junction Temperature (℃)
VSD-Source-Drain Voltage(V)
Figure 9: Capacitance Characteristics
Figure 10: Gate Charge Characteristics
12
VDS-Drain-Source Voltage (V)
QG-Gate Charge (nC)
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V1.1
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HY3010D/U/V
Avalanche Test Circuit
Switching Time Test Circuit
Gate Charge Test Circuit
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V1.1
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HY3010D/U/V
Device Per Unit
Package Type
TO-252-2L
Unit
Tube
Quantity
75
TO-252-2L
Reel
Tube
Tube
2500
75
TO-251-3L
TO-251-3S
75
Package Information
TO-252-2L
COMMON DIMENSIONS
mm
SYMBOL
MIN
2.20
0.00
0.97
0.68
5.20
0.43
5.98
NOM
2.30
-
MAX
2.40
0.20
1.17
0.90
5.50
0.63
6.22
A
A1
A2
b
1.07
0.78
5.33
0.53
6.10
5.30REF
6.60
-
b3
c
D
D1
E
6.40
4.63
6.80
-
E1
e
2.286BSC
10.10
1.50
2.90REF
0.51BSC
-
H
9.40
1.38
10.50
1.75
L
L1
L2
L3
L4
L5
θ
0.88
-
1.28
1.00
1.95
8°
-
1.65
0°
1.80
-
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V1.1
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HY3010D/U/V
TO-251-3L
COMMON DIMENSIONS
mm
SYMBOL
MIN
2.20
0.97
0.68
0.00
0.00
5.20
0.43
5.98
NOM
2.30
MAX
2.40
1.17
0.90
0.10
0.10
5.50
0.63
6.22
A
A2
b
1.07
0.78
b2
b2'
b3
c
0.04
0.04
5.33
0.53
D
6.10
D1
E
5.30REF
6.60
6.40
4.63
6.80
-
E1
e
-
2.286BSC
16.52
9.40
H
16.22
9.15
0.88
1.65
16.82
9.65
1.28
1.95
L1
L3
L5
1.02
1.80
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V1.1
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HY3010D/U/V
TO-251-3S
COMMON DIMENSIONS
mm
SYMBOL
MIN
2.20
0.97
0.68
5.20
0.43
5.98
NOM
2.30
MAX
2.40
1.17
0.90
5.50
0.63
6.22
A
A2
b
1.07
0.78
b3
c
5.33
0.53
D
6.10
D1
E
5.30REF
6.60
6.40
4.63
6.80
-
E1
e
-
2.286BSC
11.22
4.10
H
10.00
3.90
0.88
1.65
11.44
4.30
1.28
1.95
L1
L3
L5
1.02
1.80
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V1.1
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HY3010D/U/V
Classification Profile
Classification Reflow Profiles
Profile Feature
Preheat & Soak
Sn-Pb Eutectic Assembly
Pb-Free Assembly
100 °C
150 °C
150 °C
200 °C
Temperature min (Tsmin
)
Temperature max (Tsmax
)
60-120 seconds
60-120 seconds
Time (Tsmin to Tsmax) (t
Average ramp-up rate
s
)
3 °C/second max.
3°C/second max.
(Tsmaxto T )
P
Liquidous temperature (T
Time at liquidous (t
Peak package body Temperature
(T )*
Time (t
classification temperature (T
Average ramp-down rate (T to Tsmax
Time 25°C to peak temperature
L
)
183 °C
217 °C
L)
60-150 seconds
60-150 seconds
See Classification Temp in table 1 SeeClassification Tempin table 2
p
P
)** within 5°C of the specified
20** seconds
30** seconds
c
)
p
)
6 °C/second max.
6 minutes max.
6 °C/second max.
8 minutes max.
*Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum.
** Tolerance for time at peak profile temperature (t
p) is defined as a supplier minimum and a user maximum.
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V1.1
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HY3010D/U/V
Table 1.SnPb Eutectic Process – Classification Temperatures (Tc)
Package
Thickness
＜2.5 mm
≥2.5 mm
Volume mm³
<350
Volume mm³
≥350
235 °C
220 °C
220 °C
220 °C
Table 2.Pb-free Process – Classification Temperatures (Tc)
Package
Thickness
<1.6 mm
Volume mm³
<350
Volume mm³
350-2000
260 °C
Volume mm³
≥2000
260 °C
260 °C
1.6 mm – 2.5 mm
≥2.5 mm
260 °C
250 °C
245 °C
250 °C
245 °C
245 °C
Reliability Test Program
Test item
Method
Description
SOLDERABILITY
JESD-22, B102
JESD-22, A108
JESD-22, A102
JESD-22, A104
5 Sec, 245°C
HTRB
PCT
168/500/1000 Hrs, Bias @ 150°C
96 Hrs, 100%RH, 2atm, 121°C
500 Cycles, -55°C~150°C
TCT
Customer Service
Worldwide Sales and Service: sales@hymexa.com
Technical Support: Technology@hymexa.com
Huayi Microelectronics Co., Ltd.
No.8928,Shangji Road,Economic and Technological Development Zone,Xi'an,China
TEL: (86-029) 86685706
FAX: (86-029) 86685705
E-mail: sales@hymexa.com
Web net: www.hymexa.com
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V1.1
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