HY3408M [HUAYI]
N-Channel Enhancement Mode MOSFET;
| 型号： | HY3408M |
| 厂家： | 
HUAYI MICROELECTRONICS CO.,LTD. |
| 描述： | N-Channel Enhancement Mode MOSFET |
| 文件： | 总13页 (文件大小：1174K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HY3408AP/M/B/PS/PM
N-Channel Enhancement Mode MOSFET
FeatureDescription
Pin Description
85V/140A
RDS(ON)= 6.3mΩ(typ.)@VGS = 10V
100% Avalanche Tested
Reliable and Rugged
Lead
Free and Green Devices Available
(RoHS Compliant)
Applications
Power Management for Inverter Systems
Switching application
N-Channel MOSFET
Ordering and Marking Information
Package Code
P：TO-220FB-3L
B：TO-263-2L
M：TO-220FB-3M
PS：TO-3PS-3L
PM：TO-3PM-3S
Date Code
YYXXX WW
Assembly Material
G:Lead Free Device
Note:HOOYI lead-free products contain molding compounds/die attach materials and 100% matte tin plateTermi-
Nationfinish;which are fully compliant with RoHS.HOOYI lead-free products meet or exceed the lead-Free require-
ments of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature.HOOYI defines “Green”
to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous
material and total of Br and Cl does not exceed 1500ppm by weight).
HOOYI reserves the right to make changes, corrections, enhancements, modifications, and improvements to this pr
-oduct and/or to this document at any time without notice.
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HY3408AP/M/B/PS/PM
Absolute Maximum Ratings
Symbol
Parameter
Rating
Unit
Common Ratings (Tc=25°C Unless Otherwise Noted)
VDSS
VGSS
TJ
Drain-Source Voltage
85
±25
V
V
Gate-Source Voltage
Maximum Junction Temperature
Storage Temperature Range
Source Current-Continuous(Body Diode)
175
°C
°C
A
TSTG
IS
-55 to 175
140
Tc=25°C
Mounted on Large Heat Sink
Tc=25°C
Tc=25°C
Tc=100°C
Tc=25°C
Tc=100°C
560
140
99
A
A
IDM
Pulsed Drain Current *
ID
Continuous Drain Current
A
250
125
0.6
W
PD
Maximum Power Dissipation
W
RθJC
RθJA
EAS
Thermal Resistance-Junction to Case
Thermal Resistance-Junction to Ambient **
SinglePulsed-Avalanche Energy ***
°C/W
°C/W
mJ
62.5
673
L=0.5mH
Note:
*
**
Repetitive rating；pulse width limited by max.junction temperature.
Surface Mounted on FR4 Board.
***
Limited by TJmax , starting TJ=25°C, L = 0.5mH, RG= 25Ω, VGS =10V.
Electrical Characteristics(Tc =25°C Unless Otherwise Noted)
HY3408A
Symbol
Parameter
Test Conditions
Unit
Min
Typ.
Max
Static Characteristics
VGS=0V,IDS=250μA
BVDSS
Drain-Source Breakdown Voltage
85
-
-
V
VDS=85,VGS=0V
-
-
1
10
μA
μA
V
IDSS
Drain-to-Source LeakageCurrent
TJ=55°C
-
VDS=VGS, IDS=250μA
VGS=±25V,VDS=0V
VGS=10V,IDS=60A
VGS(th)
IGSS
Gate Threshold Voltage
2.0
-
3.0
-
4.0
Gate-Source Leakage Current
Drain-Source On-State Resistance
±100
7.5
nA
mΩ
RDS(ON)*
6.3
Diode Characteristics
Diode Forward Voltage
ISD=70A,VGS=0V
-
-
-
0.8
28
52
1.2
V
VSD*
trr
Reverse Recovery Time
Reverse Recovery Charge
-
-
ns
nC
ISD=70A,dISD/dt=100A/μs
Qrr
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HY3408AP/M/B/PS/PM
Electrical Characteristics (Cont.) (Tc =25°C Unless Otherwise Noted)
HY3408A
Typ.
Symbol
Parameter
Test Conditions
Unit
Min
Max
Dynamic Characteristics
VGS=0V,VDS=0V,F=1
MHz
RG
Gate Resistance
-
0.96
-
Ω
Ciss
Coss
Crss
td(ON)
Tr
Input Capacitance
-
-
-
-
-
-
-
4676
584
386
30
-
-
-
-
-
-
-
VGS=0V,
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Turn-on Rise Time
VDS=25V,
pF
Frequency=1.0MHz
17
VDD=42V,RG=3Ω,
ns
IDS=70A,VGS=4.5V
td(OFF)
Tf
Turn-off Delay Time
Turn-off Fall Time
44
58
Gate Charge Characteristics
Qg
Qgs
Qgd
Total Gate Charge
-
-
-
128
20
-
-
-
V
DS =68V, VGS=10V，
nC
Gate-Source Charge
Gate-Drain Charge
ID=70A
46
Note: *Pulse test，pulse width ≤ 300us，duty cycle ≤ 2%
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HY3408AP/M/B/PS/PM
Typical Operating Characteristics
Figure 1: Power Dissipation
Figure 2: Drain Current
Tc-Case Temperature(℃)
Tc-Case Temperature(℃)
Figure 3: Safe Operation Area
Figure 4: Thermal Transient Impedance
VDS-Drain-Source Voltage(V)
Maximum Effective Transient Thermal
Impedance, Junction-to-Case
Figure 5: Output Characteristics
Figure 6: Drain-Source On Resistance
VDS-Drain-Source Voltage (V)
ID-Drain Current(A)
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HY3408AP/M/B/PS/PM
Typical Operating Characteristics(Cont.)
Figure 9: On-Resistance vs. Temperature
Figure 10: Source-Drain Diode Forward
Tj-Junction Temperature (℃)
VSD-Source-Drain Voltage(V)
Figure 11: Capacitance Characteristics
Figure 12: Gate Charge Characteristics
VDS-Drain-Source Voltage (V)
QG-Gate Charge (nC)
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HY3408AP/M/B/PS/PM
Avalanche Test Circuit and Waveforms
Switching Time Test Circuit and Waveforms
Gate Charge Test Circuit and Waveforms
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HY3408AP/M/B/PS/PM
Package Information
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HY3408AP/M/B/PS/PM
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HY3408AP/M/B/PS/PM
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HY3408AP/M/B/PS/PM
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HY3408AP/M/B/PS/PM
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HY3408AP/M/B/PS/PM
Device Per Unit
Package Type
TO-220FB-3L
TO-220FB-3M
TO-263-2L
Unit
Quantity
Tube
Tube
Tube
Tube
Tube
50
50
50
50
50
TO-3PS-3L
TO-3PS-3M
Classification Profile
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HY3408AP/M/B/PS/PM
Classification Reflow Profiles
Profile Feature
Preheat & Soak
Sn-Pb Eutectic Assembly
Pb-Free Assembly
100 °C
150 °C
150 °C
200 °C
Temperature min (Tsmin
)
Temperature max (Tsmax
)
60-120 seconds
60-120 seconds
Time (Tsmin to Tsmax) (t
Average ramp-up rate
s
)
3 °C/second max.
3°C/second max.
(Tsmaxto T
Liquidous temperature (T
Time at liquidous (t
Peak package body Temperature
(T )*
Time (t
classification temperature (T
Average ramp-down rate (T
Time 25°C to peak temperature
P
)
L
)
183 °C
217 °C
L
)
60-150 seconds
60-150 seconds
See Classification Temp in table 1 SeeClassification Tempin table 2
p
P
)** within 5°C of the specified
20** seconds
30** seconds
c
)
p
to Tsmax
)
6 °C/second max.
6 minutes max.
6 °C/second max.
8 minutes max.
*Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum.
** Tolerance for time at peak profile temperature (t ) is defined as a supplier minimum and a user maximum.
Table 1.SnPb Eutectic Process – Classification Temperatures (Tc)
p
Package
Thickness
＜2.5 mm
≥2.5 mm
Volume mm³
<350
Volume mm³
≥350
235 °C
220 °C
220 °C
220 °C
Table 2.Pb-free Process – Classification Temperatures (Tc)
Package
Thickness
<1.6 mm
Volume mm³
<350
Volume mm³
350-2000
260 °C
Volume mm³
≥2000
260 °C
260 °C
1.6 mm – 2.5 mm
≥2.5 mm
260 °C
250 °C
245 °C
250 °C
245 °C
245 °C
Reliability Test Program
Test item
Method
Description
SOLDERABILITY
HTRB
JESD-22, B102
JESD-22, A108
JESD-22, A102
JESD-22, A104
5 Sec, 245°C
1000 Hrs, Bias @ 125°C
PCT
168 Hrs, 100%RH, 2atm, 121°C
500 Cycles, -65°C~150°C
TCT
Customer Service
Worldwide Sales and Service: sales@hooyi.cc
Technical Support: technical @hooyi.cc
Xi’an Hooyi Semiconductor Technology Co., Ltd.
No.105,5th Fengcheng Road,Economic and Technological Development Zone,Xi'an,China
TEL: (86-029) 86685706
FAX: (86-029) 86685705
E-mail: sales@hooyi.cc
Web net: www.hooyi.cc
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